ST TYN606, TYN1006 User Manual

	TYN606
®	TYN1006

STANDARD

6A SCRS

Table 1: Main Features

Symbol	Value	Unit
IT(RMS)	6	A
VDRM/VRRM	600 and 1000	V
IGT	15	mA

DESCRIPTION

The TYN606 and TYN1006 family of Silicon Controlled Rectifiers are high performance glass passivated technology.

This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load.

A

G

K

A

K

A

G

TO-220AB

Table 2: Order Codes

Part Numbers	Marking
TYN606RG	TYN606
TYN1006RG	TYN1006

Table 3: Absolute Ratings (limiting values)

Symbol	Parameter					Value	Unit
IT(RMS)	RMS on-state current (180° conduction angle)			Tc = 110°C		6	A
IT(AV)	Average on-state current (180° conduction angle)			Tc = 110°C		3.8	A
ITSM	Non repetitive surge peak on-state		tp = 8.3 ms	Tj = 25°C		73	A
	current		tp = 10 ms			70
I²t	I²t Value for fusing		tp = 10 ms	Tj = 25°C		24.5	A2S
dI/dt	Critical rate of rise of on-state current			Tj = 125°C		50	A/µs
	IG = 100 mA , dIG/dt = 0.1 A/µs
IGM	Peak gate current		tp = 20 µs	Tj = 125°C		4	A
PG(AV)	Average gate power dissipation			Tj = 125°C		1	W
PGM	Maximum gate power		tp = 20 µs	Tj = 125°C		10	W
VDRM	Repetitive peak off-state voltage		TYN606	Tj = 125°C		600	V
VRRM			TYN1006			1000
Tstg	Storage junction temperature range					- 40 to + 150	°C
Tj	Operating junction temperature range					- 40 to + 125
TL	Maximum lead temperature for soldering during 10s at 2mm from case					260	°C

February 2006

REV. 2

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TYN606 / TYN1006

Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Value

Unit

IGT

VD = 12 V (D.C.)

RL = 33 Ω

MAX.

15

mA

VGT

MAX.

1.5

V

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 110°C

MIN.

0.2

V

tgt

VD = VDRM

IG = 40 mA dIG/dt = 0.5 A/µs

TYP.

2

µs

IH

IT = 100 mA

Gate open

MAX.

30

mA

IL

IG = 1.2 x IGT

TYP.

50

mA

dV/dt

Linear slope up to:

Tj = 110°C

MIN.

200

V/µs

VD = 67 % VDRM Gate open

VTM

ITM = 12 A

tp = 380 µs

MAX.

1.6

V

I

Tj = 25°C

10

µA

DRM

VDRM = VRRM

MAX.

IRRM

Tj = 110°C

2

mA

tq

VD = 67 % VDRM

ITM = 12 A

VR = 25 V

Tj = 110°C

TYP.

70

µs

dITM/dt = 30 A/µs

dVD/dt = 50 V/µs

Table 5: Thermal Resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (D.C.)

2.5

°C/W

Rth(j-a)

Junction to ambient

60

°C/W

Figure 1: Maximum average power dissipation versus average on-state current

P(W)
7
6									DC
						α = 180°
				α = 120°
5
			α = 90°
		α = 60°
4
3	α = 30°
2									360°
1
0					IT(AV)(A)				α
0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	4.5	5.0

Figure 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead)

P(W)						Tlead(°C)
7
α = 180°		Rth = 15°C/W		Rth = 10°C/W	Rth = 5°C/W	Rth = 0°C/W
6							110
5
4							115
3
2							120
1
0			Tamb(°C)				125
0	20	40	60	80	100	120	140

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