ST TSH330 User Manual

TSH330

1.1 GHz Low-Noise Operational Amplifier

■ Bandwidth: 1.1GHz (Gain=+2)

■ Quiescent current: 16.6 mA

■ Slew rate: 1800V/µs

■ Input noise: 1.3nV/√Hz

■ Distortion: SFDR = -78dBc (10MHz, 2Vp-p)

■ Output stage optimized for driving 100Ω

loads

■ Tested on 5V power supply

Description

The TSH330 is a current feedback operational amplifier using a very high-speed complementary technology to provide a large bandwidth of

1.1GHz in gain of 2 while drawing only 16.6mA of quiescent current. In addition, the TSH330 offers

0.1dB gain flatness up to 160MHz with a gain of 2. With a slew rate of 1800V/µs and an output stage optimized for driving a standard 100Ω load, this device is highly suitable for applications where speed and low-distortion are the main requirements.

The TSH330 is a single operator available in the SO8 plastic package, saving board space as well as providing excellent thermal and dynamic performances.

Pin Connections (top view)

D

SO-8

(Plastic Micropackage)

1

NC

-IN

+IN

-VCC

2

3

4

_

+

SO8

NC

8

7

+VCC

6NCOutput

5

Applications

■ Communication & video test equipment

■ Medical instrumentation

■ ADC drivers

Order Codes

Part Number Temperature Range Package Conditioning Marking

TSH330ID

TSH330IDT SO8 Tape&Reel TSH330I

June 2005 Revision 3 1/19

-40°C to +85°C

SO8 Tube TSH330I

TSH330 Absolute Maximum Ratings

1 Absolute Maximum Ratings

Table 1. Key parameters and their absolute maximum ratings

Symbol Parameter Value Unit

V

T

R R P

Supply Voltage

CC

V

Differential Input Voltage

id

V

Input Voltage Range

in

Operating Free Air Temperature Range

oper

Storage Temperature

stg

Maximum Junction Temperature

T

j

SO8 Thermal Resistance Junction to Ambient 60 °C/W

thja

SO8 Thermal Resistance Junction to Case 28 °C/W

thjc

SO8 Maximum Power Dissipation4 (@Ta=25°C) for Tj=150°C

max

HBM: Human Body Model HBM: Human Body Model (pins 2 and 3) 0.6 kV

ESD

MM: Machine Model MM: Machine Model (pins 2 and 3) 80 V CDM: Charged Device Model (pins 1, 4, 5, 6, 7 and 8) 1.5 kV CDM: Charged Device Model (pins 2 and 3) 1 kV Latch-up Immunity 200 mA

1) All voltages values are measured with respect to the ground pin.

2) Differential voltage are non-inverting input terminal with respect to the inverting input terminal.

3) The magnitude of input and output voltage must never exceed VCC +0.3V.

4) Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers.

5) Human body model, 100pF discharged through a 1.5kΩ resistor into pMin of device.

6) This is a minimum Value. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with

no external series resistor (internal resistor < 5Ω), into pin to pin of device.

1

2

3

5

(pins 1, 4, 5, 6, 7 and 8)

6

(pins 1, 4, 5, 6, 7 and 8)

6V +/-0.5 V +/-2.5 V

-40 to + 85 °C

-65 to +150 °C 150 °C

830 mW

2kV

200 V

Table 2. Operating conditions

Symbol Parameter Value Unit

V V

1) Tested in full production at 5V (±2.5V) supply voltage.

Supply Voltage

CC

Common Mode Input Voltage

icm

2/19

1

4.5 to 5.5 V

-Vcc+1.5V, +Vcc-1.5V V

Electrical Characteristics TSH330

2 Electrical Characteristics

Table 3. Electrical characteristics for VCC= ±2.5Volts, T

=+25°C (unless otherwise specified)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

DC performance

V

io

∆V

I

ib+

I

ib-

CMR

SVR

PSR

ICC

Input Offset Voltage

Offset Voltage between both inputs

Vio drift vs. Temperature T

io

Non Inverting Input Bias Current

DC current necessary to bias the input +

Inverting Input Bias Current

DC current necessary to bias the input -

Common Mode Rejection Ratio

20 log

(∆Vic/∆Vio)

Supply Voltage Rejection Ratio

20 log

(∆Vcc/∆V

out

)

Power Supply Rejection Ratio

20 log

(∆Vcc/∆V

out

)

Supply Current

DC consumption with no input signal

T

amb

T

< T < T

< T

amb

< T < T

< T

max.

min.

T

amb

T

min.

T

amb

T

min.

∆Vic = ±1V T

< T

amb

< T

max.

min.

∆Vcc= 3.5V to 5V

< T

T

min.

amb

< T

max.

∆Vcc=200mVp-p@1kHz

< T

T

min.

amb

< T

max.

-3.1 0.18 +3.1

0.8

1.6 µV/°C

26 55 21

722

13

50 54

54

63 74

67 56

52 No load 16.6 20.2 mA T

< T

min.

amb

< T

max.

16.6 mA

Dynamic performance and output characteristics

R

Bw

SR

V

Transimpedance

Output Voltage/Input Current Gain in open loop of a CFA.

OL

For a VFA, the analog of this feature is the Open Loop Gain (A

VD

)

-3dB Bandwidth

Frequency where the gain is 3dB below the DC gain A

Note: Gain Bandwidth Product criterion is

V

not applicable for Current-FeedbackAmplifiers

Gain Flatness @ 0.1dB

Band of frequency where the gain variation does not exceed 0.1dB

Slew Rate

Maximum output speed of sweep in large signal

High Level Output Voltage RL = 100Ω

OH

Low Level Output Voltage RL = 100Ω

OL

= ±1V, RL = 100Ω

∆V

out

< T

T

min.

out=20mVp-p, RL = 100Ω

V

= +1

A

V

= +2

A

V

amb

< T

max.

AV = -4

= -4, T

A

V

Small Signal V

= +2, RL = 100Ω

A

V

= 2Vp-p, AV = +2,

V

out

min.

< T

amb

=20mVp-p

out

< T

RL = 100Ω

< T

amb

< T

max.

T

min.

T

min.

104 153 kΩ

152 kΩ

1500 1100

550

max.

630 600

160

1800 V/µs

1.5 1.64 V

1.54

-1.55 -1.5 V

-1.5

mV

µA

dB

MHz

3/19

TSH330 Electrical Characteristics

Table 3. Electrical characteristics for VCC= ±2.5Volts, T

=+25°C (unless otherwise specified)

amb

Symbol Parameter Test Condition Min. Typ. Max. Unit

I

Isink

out

Short-circuit Output current coming in the op-amp.

Output to GND 360 453

< T

T

min.

amb

< T

max.

427

See fig-17 for more details

Isource

Output current coming out from the opamp.

Output to GND -340 -400

< T

T

min.

amb

< T

max.

-350

See fig-18 for more details

Noise and distortion

eN

iN

SFDR

Equivalent Input Noise Voltage

see application note on page 13

Equivalent Input Noise Current (+)

see application note on page 13

Equivalent Input Noise Current (-)

see application note on page 13

Spurious Free Dynamic Range

The highest harmonic of the output spectrum when injecting a filtered sine wave

F = 100kHz

= +2, Vout = 2Vp-p,

A

V

= 100Ω

R

L

F = 10MHz F = 20MHz F = 100MHz F = 150MHz

1.3 nV/√Hz

22 pA/√Hz

16 pA/√Hz

-78

-73

-48

-37

Table 4. Closed-loop gain and feedback components

mA

dBc

V

CC

(V)

Gain

Rfb (Ω)

-3dB Bw (MHz) 0.1dB Bw (MHz)

+10 200 280 50

-10 200 270 45

+2 300 1000 160

±2.5

-2 270 530 180

+1 300 1500 38

-1 260 600 280

4/19

Electrical Characteristics TSH330

Figure 1. Frequency response, positive gain

24 22 20 18 16 14 12 10

8 6 4

Gain (dB)

2 0

-2

-4

Small Signal

-6

Vcc=5V

-8

Load=100

-10 1M 10M 100M 1G

Gain=+10

Gain=+4

Gain=+2

Gain=+1

Ω

Frequency (Hz)

Figure 2. Gain flatness, gain=+4

12,2

12,0

11,8

11,6

Gain Flatness (dB)

11,4

Vin

8k2

22pF

Gain=+4, Vcc=5V,

Gain=+4, Vcc=5V, Small Signal

Small Signal

1M 10M 100M

+

-

100R

300R

Vout

Frequency (Hz)

Figure 4. Frequency response, negative gain

24 22 20 18 16 14 12 10

8 6 4

Gain (dB)

2 0

-2

-4

Small Signal

-6

Vcc=5V

-8

Load=100

-10 1M 10M 100M 1G

Gain=-10

Gain=-4

Gain=-2

Gain=-1

Ω

Frequency (Hz)

Figure 5. Gain flatness, gain=+2

6,2

6,0

Vin

+

Vout

5,8

8k2

8k2 1pF

Gain Flatness (dB)

1pF

5,6

Gain=+2, Vcc=5V,

Gain=+2, Vcc=5V, Small Signal

Small Signal

5,4

1M 10M 100M 1G

-

300R

Vout

Frequency (Hz)

Figure 3. Compensation, gain=+2

10

8 6 4 2 0

-2

-4

-6

Vin

-8

Gain (dB)

-10

8k2

-12

1pF

-14

-16

-18

Gain=+ 2, Vcc=5V,

Gain=+ 2, Vcc=5V, Small Signal

Small Signal

-20

-22 1M 10M 100M 1G

+

-

300R

Frequency (Hz)

Vout

Figure 6. Compensation, gain=+4

16 14 12 10

8 6 4 2

Vin

0

-2

Gain (dB)

-4

8k2

-6

22pF

-8

-10

-12

Gain=+4, Vcc=5V,

-14

Small Signal

-16 1M 10M 100M 1G

+

-

100R

300R

Vout

Frequency (Hz)

5/19

TSH330 Electrical Characteristics

Figure 7. Compensation, gain=+10

24 22 20 18 16 14 12 10

Vin

8 6

Gain (dB)

4

15pF

2 0

-2

Gain=+10, Vcc=5V,

-4

Small Signal

-6

-8 1M 10M 100M 1G

22R

+

-

200R

Vout

Frequency (Hz)

Figure 8. Input current noise vs. frequency

150 140 130 120 110 100

90 80 70

(pA/VHz)

60

n

i

50 40 30 20 10

Neg. Current Noise

Pos. Current Nois e

1k 10k 100k 1M 10M

Frequency (Hz)

Figure 10. Quiescent current vs. Vcc

20

15

10

5

0

-5

-10

Icc (mA)

-15

-20

Gain=+2 Vcc=5V

-25

Input to ground, no load

-30 1,25 1,50 1,75 2,00 2,25 2,50

Icc(+)

Icc(-)

+/-Vcc (V)

Figure 11. Input voltage noise vs. frequency

4.0

3.5

3.0

2.5

(nV/VHz)

n

e

2.0

1.5

1.0 1k 10k 100k 1M 10M

Frequency (Hz)

Figure 9. Output amplitude vs. load

4,0

3,5

3,0

Vout max. (Vp-p)

2,5

2,0

10 100 1k 10k 100k

6/19

Load (ohms)

Freq=? Gain=+2 Vcc=5V

Figure 12. Noise figure

40

35

30

25

20

NF (dB)

15

10

5

0

1 10 100 1k 10k 100k

Rsource (ohms)

Vcc=5V

Electrical Characteristics TSH330

Figure 13. Output amplitude vs. frequency

5

4

3

2

Vout max. (Vp-p)

1

Gain=+2 Vcc=5V Load=100

0

1M 10M 100M 1G

Ω

Frequency (Hz)

Figure 14. Distortion vs. amplitude

-20

-25

-30

-35

-40

-45

-50

-55

-60

-65

HD2

-70

-75

HD2 & HD3 (dBc)

-80

-85

HD3

-90

-95

-100 01234

Output Amplitude (Vp-p)

Gain=+2 Vcc=5V F=10MHz Load=100

Figure 16. Distortion vs. amplitude

-20

-25

-30

-35

-40

-45

-50

HD2

-55

-60

-65

-70

-75

HD2 & HD3 (dBc)

-80

-85

-90

HD3

-95

-100 01234

Output Amplitude (Vp-p)

Gain=+2 Vcc=5V F=30MHz

Ω

Load=100

Figure 17. Isink

600

550

500

-1V

450

400

350

300

250

Isink (mA)

200

150

100

Ω

50

0

-2,0 -1,5 -1,0 -0,5 0,0

+

_

RG

+2.5V

VOL

without load

-2.5V

Amplifier in open

Amplifier in open loop without load

loop without load

Isink

V

V (V)

Figure 15. Distortion vs. amplitude

-20

-25

-30

-35

-40

-45

-50

HD2

-55

-60

-65

-70

-75

HD2 & HD3 (dBc)

-80

-85

HD3

-90

-95

-100 01234

Output Amplitude (Vp-p)

Gain=+2 Vcc=5V F=20MHz Load=100

Figure 18. Isource

0

-50

-100

-150

-200

-250

-300

-350

Isource (mA)

-400

-450

-500

Ω

-550

-600 0,0 0,5 1,0 1,5 2,0

+1V

V (V)

+

_

RG

+2.5V

VOH

without load

Isour ce

-2.5V

Amplifier in open

Amplifier in open loop without load

loop without load

V

7/19

TSH330 Electrical Characteristics

Figure 19. Slew rate

2,0

1,5

1,0

0,5

Output Response (V)

Gain=+2

0,0

-2ns -1ns 0s 1ns 2ns 3ns

Vcc=5V Load=100

Time (ns)

Figure 20. Reverse isolation vs. frequency

0

-20

-40

Figure 22. CMR vs. temperature

64

62

60

58

56

54

CMR (dB)

52

50

Gain=+1

48

Ω

Vcc=5V

46

Ω

Load=100

-40 -20 0 20 40 60 80 100 120

Temperature (°C)

Figure 23. SVR vs. temperature

85

80

75

70

-60

Gain (dB)

-80

Small Signal Vcc=5V Load=100

-100 1M 10M 100M 1G

Ω

Frequency (Hz)

Figure 21. Bandwidth vs. temperature

1,3

1,2

1,1

1,0

0,9

Bw (GHz)

0,8

0,7

Gain=+2

0,6

Vcc=5V

Ω

Load=100

0,5

-40-20 0 20406080100120

Temperature (°C)

65

SVR (dB)

60

Gain=+1

55

Vcc=5V

Ω

Load=100

50

-40 -20 0 20 40 60 80 100 120

Temperature (°C)

Figure 24. ROL vs. temperature

200

180

160

(MΩ)

OL

140

R

120

Open Loop Vcc=5V

100

-40 - 20 0 20 40 60 80 100 120

Temperature (°C)

8/19

Electrical Characteristics TSH330

V

(micro

V)

Figure 25. I-bias vs. temperature

24

22

20

18

16

(µA)

14

BIAS

I

12

10

8

6

Ib(+)

Ib(-)

Gain=+1 Vcc=5V Load=100

Ω

-40-20 0 20406080100120

Temperature (°C)

Figure 26. Vio vs. temperature

1000

800

600

IO

400

200

Open Loop Vcc=5V

Ω

Load=100

0

-40 -20 0 20 40 60 80 100 120

Temperature (°C)

Figure 28. Icc vs. temperature

20

15

10

5

0

-5

(mA)

-10

CC

I

-15

-20

Gain=+1

-25

Vcc=5V no Load

-30

In+/In- to GND

-35

-40 -20 0 20 40 60 80 100 120

Icc(+)

Icc(-)

Figure 29. Iout vs. temperature

600

400

200

-200

Iout (mA)

-400

-600

-800

Isource

0

Isink

Output: short-circuit Gain=+1 Vcc=5V

-40 -20 0 20 40 60 80 100 120

Temperature (°C)

Figure 27. VOH & VOL vs. temperature

2

1

0

(V)

-1

OH & OL

V

-2

-3

-4

VOH

VOL

Gain=+1 Vcc=5V

Ω

Load=100

-40-200 20406080

Temperature (°C)

9/19

TSH330 Evaluation Boards

3 Evaluation Boards

An evaluation board kit optimized for high-speed operational amplifiers is available (order code: KITHSEVAL/STDL). The kit includes the following evaluation boards, as well as a CD-ROM containing datasheets, articles, application notes and a user manual:

z SOT23_SINGLE_HF BOARD: Board for the evaluation of a single high-speed op-amp in SOT23-5

package.

z SO8_SINGLE_HF: Board for the evaluation of a single high-speed op-amp in SO8 package. z SO8_DUAL_HF: Board for the evaluation of a dual high-speed op-amp in SO8 package. z SO8_S_MULTI: Board for the evaluation of a single high-speed op-amp in SO8 package in inverting

and non-inverting configuration, dual and single supply.

z SO14_TRIPLE: Board for the evaluation of a triple high-speed op-amp in SO14 package with video

application considerations.

Board material:

z 2 layers

z FR4 (εr=4.6)

z epoxy 1.6mm z copper thickness: 35µm

Figure 30. Evaluation kit for high-speed op-amps

10/19

Power Supply Considerations TSH330

4 Power Supply Considerations

Correct power supply bypassing is very important for optimizing performance in high-frequency ranges. Bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1µF is necessary to minimize the distortion. For better quality bypassing, a capacitor of 10nF can be added using the same implementation conditions. Bypass capacitors must be incorporated for both the negative and the positive supply.

For example, on the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9.

Figure 31. Circuit for power supply bypassing

+VCC

+

-

10microF

+

10nF

10microF

10microF +

+

-VCC

Single power supply

In the event that a single supply system is used, new biasing is necessary to assume a positive output dynamic range between 0V and +V will provide an output dynamic from +0.9V to +4.1V on 100Ω load.

The amplifier must be biased with a mid-supply (nominally +V component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (55µA max.) as the 1% of the current through the resistance divider to keep a stable mid-supply, two resistances of 470Ω can be used.

The input provides a high pass filter with a break frequency below 10Hz which is necessary to remove the original 0 volt DC component of the input signal, and to fix it at +V

Figure 32 Evaluation Boards

illustrates a 5V single power supply configuration for the SO8_SINGLE evaluation board (see

on page 10).

supply rails. Considering the values of VOH and VOL, the amplifier

CC

/2), in order to maintain the DC

CC

/2.

CC

11/19

TSH330 Power Supply Considerations

A capacitor CG is added in the gain network to ensure a unity gain in low-frequency to keep the right DC component at the output. C a consideration of the cut off frequency of this low-pass filter.

Figure 32. Circuit for +5V single supply

10µF

IN

+5V

R1

R1 470Ω

470Ω

R2

R2 470Ω

470Ω

contributes to a high-pass filter with Rfb//RG and its value is calculated with

G

+5V

+

Rin

Rin 1kΩ

1kΩ

+ 1µF

10nF

+

R

CG

+

_

fb

R

G

100µF

OUT

100Ω

12/19

Noise Measurements TSH330

5 Noise Measurements

The noise model is shown in

z eN: input voltage noise of the amplifier z iNn: negative input current noise of the amplifier z iNp: positive input current noise of the amplifier

Figure 33

, where:

Figure 33. Noise model

iN+

R1

iN+

iN-

N1

N2

eN

R3

N3

+

_

R2

output

HP3577

HP3577 Input noise:

Input noise: 8nV/√Hz

8nV/√Hz

The thermal noise of a resistance R is:

4kTR∆F

where ∆F is the specified bandwidth.

On a 1Hz bandwidth the thermal noise is reduced to

4kTR

where k is the Boltzmann's constant, equal to 1,374.10-23J/°K. T is the temperature (°K).

The output noise eNo is calculated using the Superposition Theorem. However eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in

Equation 1

eNo2eN2g2iNn2R22iNp

:

eNo V12V22V32V42V52V6

+++++=

2

+×+×

R3

×

2

g

×

2

R2

------- -

4kTR1 4kTR2 1

R1

R2

------- -+

R1

2

×++×+=

4kTR3

Equation 1

Equation 2

13/19

TSH330 Noise Measurements

The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is:

2

eNo Measured()

instrumentation

()

–=

2

Equation 3

The input noise is called the Equivalent Input Noise as it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g).

After simplification of the fourth and the fifth term of

eNo2eN2g2iNn2R22iNp

2

+×+×

Measurement of the Input Voltage Noise

If we assume a short-circuit on the non-inverting input (R3=0), from

eNo eN2g2iNn2R22g4kTR2

R3

×

Equation 2

2

g

×

eN

we obtain:

g4kTR21

Equation 4

×+×+×=

2

R2

------- -+

4kTR3

×+×+=

R1

we can derive:

Equation 4

Equation 5

In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough:

R3=0, gain: g=100

Measurement of the Negative Input Current Noise

To measure the negative input current noise iNn, we set R3=0 and use

iNn

Equation 5

. This time the gain

must be lower in order to decrease the thermal noise contribution:

R3=0, gain: g=10

Measurement of the Positive Input Current Noise

To extract iNp from

Equation 3

, a resistance R3 is connected to the non-inverting input. The value of R3

iNp

must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution:

R3=100W, gain: g=10

14/19

Intermodulation Distortion Product TSH330

6 Intermodulation Distortion Product

The non-ideal output of the amplifier can be described by the following series:

Vout C0C1VinC2V

++ +=

2

in

…C

n

V

in

n

due to non-linearity in the input-output amplitude transfer, where the input is V component, C

) is the fundamental and C

1(Vin

is the amplitude of the harmonics of the output signal V

n

=Asinωt, C0 is the DC

in

out

A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product.

The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals.

In this case:

tsin

ω

V

A

in

A

1

tsin+=

ω

2

then:

V

outC0C1

++ +=

A

()C

tsin

ω

A

1

tsin+

ω

2

A ω

()

2

tsin

A

1

2

tsin+

ω

2

… C

A ω

()

n

tsin

A

1

n

tsin+

ω

2

From this expression, we can extract the distortion terms, and the intermodulation terms form a single sine wave: second-order intermodulation terms IM2 by the frequencies (ω

2

amplitude of C2A

+2ω2) and (ω1+2ω2) with an amplitude of (3/4)C3A3.

ω

1

and third-order intermodulation terms IM3 by the frequencies (2ω1-ω2), (2ω1+ω2), (−

) and (ω1+ω2) with an

1-ω2

The measurement of the intermodulation product of the driver is achieved by using the driver as a mixer by a summing amplifier configuration (see

Figure 34

). In this way, the non-linearity problem of an external

mixing device is avoided.

Figure 34. Inverting summing amplifier (using evaluation board SO8_S_MULTI)

.

Vin1

Vin2

fb

R

R1

R2

R

_

Vout

+

100Ω

15/19

TSH330 The Bias of an Inverting Amplifier

7 The Bias of an Inverting Amplifier

A resistance is necessary to achieve a good input biasing, such as resistance R shown in

Figure 35

.

The magnitude of this resistance is calculated by assuming the negative and positive input bias current. The aim is to compensate for the offset bias current, which could affect the input offset voltage and the output DC component. Assuming Ib-, Ib+, R

in, Rfb and a zero volt output, the resistance R will be:

R

×

inRfb

R

---------------------- -=

RinR

+

fb

Figure 35. Compensation of the input bias current

fb

R

Ib-

Rin

Ib+

_

+

R

Vcc+

Vcc-

Output

Load

16/19

Active Filtering TSH330

8 Active Filtering

Figure 36. Low-pass active filtering, Sallen-Key

C1

R

1 R2

IN

RG

From the resistors Rfb and RG we can directly calculate the gain of the filter in a classical non-inverting amplification configuration:

AVg1

+

C2

_

fb

R

fb

----------+== R

g

OUT

100Ω

We assume the following expression as the response of the system:

Vout

ω

j

-------------------

T

ω

j

Vin

------------------------------------ ---------==

ω

j

12

g

2

j

jω

ω()

-------

ζ

--------------++

ω

2

c

ω

c

The cut-off frequency is not gain-dependent and so becomes:

ω

c

1

--------------------------------------= R1R2C1C2

The damping factor is calculated by the following expression:

1

ζ

ω

--cC1R1C1R2C2R1C1R1

2

–++()=

g

The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use some very stable resistor and capacitor values. In the case of R1=R2=R:

R

fb

–

----------

1

R

g

2

ζ

2C2C

------------------------------------= 2C1C

Due to a limited selection of values of capacitors in comparison with resistors, we can fix C1=C2=C, so that:

R

fb

–

----------

1

R

g

2

ζ

2R2R

------------------------------------= 2R1R

17/19

TSH330 Package Mechanical Data

9 Package Mechanical Data

SO-8 MECHANICAL DATA

DIM.

A 1.35 1.75 0.053 0.069

A1 0.10 0.25 0.04 0.010

A2 1.10 1.65 0.043 0.065

B 0.33 0.51 0.013 0.020

C 0.19 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

e 1.27 0.050

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.020

L 0.40 1.27 0.016 0.050

k ˚ (max.)

ddd 0.1 0.04

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

8

18/19

0016023/C

Revision History TSH330

10 Revision History

Date Revision Description of Changes

Oct. 2004 1 First release corresponding to Preliminary Data version of datasheet.

Dec. 2004 2 Release of mature product datasheet.

Table 1

on page 2

June 2005 3

- Rthjc: Thermal Resistance Junction to Ambient replaced by Thermal Resistance Junction to Case

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www.st.com

19/19

ST TSH330 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

1 Absolute Maximum Ratings

2 Electrical Characteristics

3 Evaluation Boards

4 Power Supply Considerations

5 Noise Measurements

6 Intermodulation Distortion Product

7 The Bias of an Inverting Amplifier

8 Active Filtering

9 Package Mechanical Data

10 Revision History