Precision low power CMOS quad operational amplifiers
Features
■ Low power consumption: 150 µA/op
■ Output voltage can swing to ground
■ Excellent phase margin on capacitive loads
■ Unity gain stable
■ Two input offset voltage selections
Description
These devices are low cost, low power quad
operational amplifiers designed to operate with
single or dual supplies. These operational
amplifiers use the ST silicon gate CMOS process
allowing an excellent consumption-speed ratio.
These series are ideally suited for low
consumption applications.
Three power consumptions are available thus
offering the best consumption-speed ratio for your
application:
■ ICC = 10 µA/amp: TS27L4 (very low power)
■ ICC = 150 µA/amp: TS27M4 (low power)
■ ICC = 1 mA/amp: TS274 (standard)
DIP14
(Plastic package)
SO14
(Plastic micropackage)
TSSOP14
(Thin shrink small outline package)
Pin connections (top view)
These CMOS amplifiers offer very high input
impedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see
Figure 4 on page 7).
September 2008 Rev 21/14
www.st.com
14
Circuit schematicsTS27M4C, TS27M4I, TS27M4M
E
E
Input
differential
Second
stage
Output
stage
Output
CC
V
CC
V
Current
source
x I
1 Circuit schematics
Figure 1.Block diagram
2/14
TS27M4C, TS27M4I, TS27M4MCircuit schematics
Figure 2.Schematic diagram (for 1/4 TS27M4)
15
T
12
T
10
T
11
T
8
T
6
T
Output
7
T
16
T
14
T
13
T
9
T
R1
C1
Input
2
T
5
CC
V
T
1
T
4
T
3
T
27
T
26
T
25
T
24
T
Inpu t
28
T
23
T
2
R
18
T
17
T
19
T
29
T
22
T
21
T
20
T
CC
V
3/14
Absolute maximum ratings and operating conditionsTS27M4C, TS27M4I, TS27M4M
2 Absolute maximum ratings and operating conditions
Table 1.Absolute maximum ratings (AMR)
SymbolParameterTS27M4C/ACTS27M4I/AITS27M4M/AMUnit
(3)
(1)
18V
(2)
±18V
-0.3 to 18V
+
≥ 15V±30mA
CC
(4)
105
100
80
(4)
31
32
33
(5)
(6)
(7)
1kV
100V
1.5kV
+Supply voltage
V
CC
T
T
V
V
I
I
oper
Differential input voltage
id
Input voltage
in
Output current for V
o
Input current±5mA
in
Operating free-air temperature range0 to +70-40 to +125-55 to +125°C
Storage temperature range-65 to +150°C
stg
Thermal resistance junction to ambient
R
thja
SO-14
TSSOP14
DIP14
Thermal resistance junction to case
R
thjc
SO-14
TSSOP14
DIP14
HBM: human body model
ESD
MM: machine model
CDM: charged device model
°C/W
°C/W
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation. Values are typical.
5. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5kΩ resistor
between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the
device with no external series resistor (internal resistor < 5Ω). This is done for all couples of connected pin combinations
while the other pins are floating.
7. Charged device model: all pins and the package are charged together to the specified voltage and then discharged directly
to the ground through only one pin. This is done for all pins.