ST TS27M2 User Manual
TS27M2, TS27M2A, TS27M2B
Low-power CMOS dual operational amplifiers
Features
■ Wide supply voltage range: 3 to 16 V
■ Ultra-low consumption: 150 µA/op typ
■ Output voltage swing to ground
■ Excellent phase margin on capacitive load
■ Gain bandwidth product: 1 MHz typ
■ Vio down to 2 mV max. (B version)
Description
N
DIP8
(Plastic package)
The TS27x2 series are low-cost and low-power
dual operational amplifiers designed to operate
with high-voltage single or dual supplies. These
operational amplifiers use the ST silicon gate
CMOS process, providing an excellent
consumption-speed ratio thanks to three different
power consumptions, making them ideal for lowconsumption applications:
I
= 10 µA/amp: TS27L2 (very low power),
CC
I
= 150 µA/amp: TS27M2 (low power) and
CC
I
= 1 mA/amp: TS272 (high speed)
CC
The devices also offer a very high input
impedance and extremely low input currents.
Their main advantage compared to JFET devices
is the very low input current drift with temperature
(Figure 3).
D
SO-8
(Plastic micropackage)
P
TSSOP8
(Thin shrink small outline package)
Pin connections (top view)
Out1
Out1
In1-
In1-
In1+
In1+
V
V
CC-
CC-
1
1
_
_
2
2
+
+
3
3
4
4
8
8
V
V
CC+
CC+
7
7
Out2
Out2
_
_
+
+
In2-
In2-
6
6
In2+
In2+
5
5
August 2009 Doc ID 2306 Rev 2 1/14
www.st.com
14
Absolute maximum ratings and operating conditions TS27M2, TS27M2A, TS27M2B
1 Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings
Symbol Parameter TS27M2x/Ax/Bx Unit
+
CC
Supply voltage
V
Vid Differential input voltage
Input voltage
V
i
Output current for V
I
o
I
Input current ±5 mA
in
SO-8
(4)(5)
R
thja
DIP8
TSSOP8
(3)
(1)
18 V
(2)
±18 V
-0.3 to 18 V
+
≥ 15V ±30 mA
CC
125
85
120
°C/W
T
Storage temperature range -65 to +150 °C
stg
Maximum junction temperature 150 °C
T
j
HBM: human body model
ESD
MM: machine model
CDM: charged device model
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive
supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation.
are typical values.
5. R
th
6. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
7. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of
connected pin combinations while the other pins are floating.
8. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
Table 2. Operating conditions
Symbol Parameter
+
V
V
Supply voltage 3 to 16 V
CC
Common mode input voltage
icm
range
(6)
(7)
(8)
500 V
100 V
1.5 kV
Val ue Unit
TS27M2C/AC/BC TS27M2I/AI/BI TS27M2M/AM/BM
0 to V
+
- 1.5 V
CC
Toper
Operating free air temperature
range
0 to +70 -40 to +125 -55 to +125 °C
2/14 Doc ID 2306 Rev 2
TS27M2, TS27M2A, TS27M2B Absolute maximum ratings and operating conditions
Figure 1. Simplified schematic diagram (for 1/2 TS27M2)
15
T
12
T
10
T
11
T
8
T
6
T
Output
16
T
14
T
13
T
9
T
7
T
R1
C1
Inpu t
2
T
5
CC
V
T
1
T
27
T
Inp u t
28
T
4
T
3
T
29
T
23
22
26
T
2
25
T
24
T
R
18
T
17
T
T
19
T
T
21
T
20
T
CC
V
Doc ID 2306 Rev 2 3/14
Electrical characteristics TS27M2, TS27M2A, TS27M2B
2 Electrical characteristics
Table 3. Electrical characteristics at VCC+ = +10 V, VCC- = 0 V, T
(unless otherwise specified)
Symbol Parameter
DC performance
Input offset voltage
VO = 1.4 V, Vic = 0 V TS27M2
TS27M2A
V
io
≤ T
amb
≤ T
max
T
min
TS27M2B
TS27M2
TS27M2A
TS27M2B
DV
Input offset voltage drift 2 2 µV/°C
io
≤ T
≤ T
(1)
max
(1)
max
Input offset current
I
io
Vic = 5 V, VO = 5 V
T
Input bias current
I
ib
Vic = 5 V, VO = 5 V
T
min
min
≤ T
≤ T
amb
amb
High level output voltage
V
OH
V
OL
Vid = 100 mV, RL = 100 lΩ
≤ T
amb
≤ T
max
T
min
Low level output voltage
= -100 mV 50 50
V
id
Large signal voltage gain
A
vd
CMR
SVR
= 5 V, RL = 100 kΩ, Vo = 1 V to 6 V
V
iC
T
≤ T
amb
≤ T
max
min
Common mode rejection ratio
= 1V to 7.4V, Vo = 1.4 V 65 80 65 80
V
iC
Supply voltage rejection ratio
+
V
= 5 V to 10 V, Vo = 1.4 V 60 80 60 80
CC
Supply current (per amplifier)
I
CC
I
o
= 1, no load, Vo = 5 V
A
v
T
≤ T
amb
≤ T
max
min
Output short circuit current
Vo = 0 V, Vid = 100 mV
TS27M2xC
Min. Typ. Max. Min. Typ. Max.
1.1
0.9
0.25
1
1
8.7
8.9 8.7
8.6
302050 301050
150 200
45 60 60 mA
= +25° C
amb
10
5
2
12
6.5
3
100
150
250
TS27M2xI
TS27M2xM
0.25
8.5
150 200
1.1
0.9
1
1
8.9
10
5
2
12
6.5
3.5
200
300
300
Unit
mV
pA
pA
V
mV
V/mV
dB
dB
µA
I
sink
Output sink current
Vo = VCC, Vid = -100 mV
4/14 Doc ID 2306 Rev 2
34 45 45 mA
TS27M2, TS27M2A, TS27M2B Electrical characteristics
Table 3. Electrical characteristics at VCC+ = +10 V, VCC- = 0 V, T
(unless otherwise specified) (continued)
Symbol Parameter
AC performance
Gain bandwidth product
GBP
SR
φm
K
OV
e
n
V
o1/Vo2
1. Maximum values including unavoidable inaccuracies of industrial tests.
Av = 40 dB, RL = 100 kΩ, CL = 100 pF,
f
= 100 kHz
in
Slew rate at unity gain
R
= 100 kΩ, CL = 100 pF, Vi = 3 to 7 V
L
Phase margin at unity gain
A
= 40 dB, RL = 100 kΩ, CL = 100 pF
v
Overshoot factor 30 30 %
Equivalent input noise voltage
f = 1 kHz, R
= 100 Ω
s
Channel separation 120 120 dB
TS27M2xC
Min. Typ. Max. Min. Typ. Max.
0.5 1 0.5 1 MHz
0.3 0.6 0.3 0.6 V/μs
45 45 Degrees
38 38
= +25° C
amb
TS27M2xI
TS27M2xM
Unit
nV
-----------Hz
Doc ID 2306 Rev 2 5/14
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