ST TN1215, TS1220, TYN612, TYN812, TYN1012 User Manual

TN1215, TS1220

TYN612, TYN812, TYN1012

Sensitive and standard 12 A SCRs

Features

■ On-state rms current, I

■ Repetitive peak off-state voltage, V

600 to 1000 V

■ Triggering gate current, I

T(RMS)

0.2 to 15 mA

GT

12 A

DRM/VRRM

Description

Available either in sensitive (TS1220) or standard (TN1215 / TYNx12) gate triggering levels, the 12 A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.

Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

A

G

K

A

TN1215-xxxB

K

A

G

DPAK

A

TS1220-xxxB

K

A

G

2

PAK

D

A

TN1215-xxxG TS1220-xxxG

A

K

A

G

IPAK TN1215-xxxH TS1220-xxxH

K

A

G

A

TO-220AB

TYNx12RG

TYNx12TRG

G

A

K

TO-220AB

TS1220-xxxT

Table 1. Device summary

Voltage (xxx) V

Order code

600 V 700 V 800 V 1000 V

DRM/VRRM

Sensitivity

IGT

Package

TN1215-xxxB X X 15 mA DPAK

TN1215-xxxG X X 15 mA D

2

PA K

TN1215-xxxH X X 15 mA IPAK

TS1220-xxxB X X 0.2 mA DPAK

TS1220-xxxH X 0.2 mA IPAK

TS1220-xxxT X 0.2 mA TO-220AB

TYNx12RG X X X 15 mA TO-220AB

TYNx12TRG X X X 5 mA TO-220AB

September 2011 Doc ID 7475 Rev 7 1/13

www.st.com

13

Characteristics TN1215, TS1220, TYN612, TYN812, TYN1012

1 Characteristics

Table 2. Absolute ratings (limiting values)

Value

Symbol Parameter

TN1215-G

TYNx12

TN1215-B/-H

TS1220-B/-H/T

Unit

I

T(RMS)

I

T(AV)

I

TSM

dI/dt

I

GM

P

G(AV)

T

V

RGM

Table 3. Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)

RMS on-state current (180 °Conduction angle) Tc = 105 °C 12 A

Average on-state current (180 °Conduction angle) Tc = 105 °C 8 A

Non repetitive surge peak on-state current

²

tI

I

t Value for fusing tp = 10 ms Tj = 25 °C 98 60 A

Critical rate of rise of on-state current I

= 2 x IGT, tr ≤ 100 ns

G

= 8.3 ms

t

p

= 10 ms 140 110

t

p

F = 60 Hz T

= 25 °C

T

j

= 125 °C 50 A/µs

j

145 115

Peak gate current tp = 20 µs Tj = 125 °C 4 A

Average gate power dissipation Tj = 125 °C 1 W

Storage junction temperature range

stg

T

Operating junction temperature range

j

Maximum peak reverse gate voltage (for TN1215 and TYNx12 only)

- 40 to + 150

- 40 to + 125

5V

Symbol Test conditions TS1220 Unit

I

GT

V

GT

V

GD

V

RGIRG

I

H

I

L

dV/dt V

V

TM

V

t0

R

d

I

DRM

I

RRM

VD = 12 V, RL = 140 Ω

VD = V

DRM, RL

= 3.3 kΩ, RGK = 220 Ω Tj = 125 °C MIN. 0.1 V

= 10 µA MIN. 8 V

IT = 50 mA, RGK = 1 kΩ MAX. 5 mA

IG = 1 mA, RGK = 1 kΩ MAX. 6 mA

= 65 % V

D

DRM, RGK

= 220 Ω Tj = 125 °C MIN. 5 V/µs

ITM = 24 A, tp = 380 µs Tj = 25 °C MAX. 1.6 V

Threshold voltage Tj = 125 °C MAX. 0.85 V

Dynamic resistance Tj = 125 °C MAX. 30 mΩ

T

= 25 °C

V

DRM

= V

, RGK = 220 Ω

RRM

j

= 125 °C 2 mA

T

j

MAX. 200 µA

MAX. 0.8 V

5µA

MAX.

A

°C

2

S

2/13 Doc ID 7475 Rev 7

TN1215, TS1220, TYN612, TYN812, TYN1012 Characteristics

Table 4. Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)

TN1215 TYN

Symbol Test conditions

B / H G x12T x12

Unit

I

GT

V

I

dV/dt V

V

R

I

DRM

I

RRM

Table 5. Thermal resistance

VD = 12 V RL = 33 Ω

GT

VD = V

GD

IT = 500 mA Gate open MAX. 40 30 15 30 mA

H

IG = 1.2 I

I

L

= 67 % V

D

ITM = 24 A tp = 380 µs Tj = 25 °C MAX. 1.6 V

TM

Threshold voltage Tj = 125 °C MAX. 0.85 V

t0

Dynamic resistance Tj = 125 °C MAX. 30 mΩ

d

RL = 3.3 kΩ Tj = 125 °C MIN. 0.2 V

DRM

GT

Gate open Tj =125 °C MIN. 200 40 200 V/µs

DRM

Tj = 25 °C

V

= V

DRM

RRM

T

= 125 °C 2 mA

j

MAX. 15 5 15

MAX. 1.3 V

MAX. 80 60 30 60 mA

5µA

MAX.

Symbol Parameter Value Unit

MIN. 2 0.5 2

R

th(j-c)

th(j-a)

Junction to case (DC) 1.3 °C/W

(1)

= 0.5 cm²DPAK 70

S

(1)

S

= 1 cm²D2PA K 4 5

Junction to ambient (DC)

IPAK 100

mA

°C/W

1. S = Copper surface under tab

Figure 1. Maximum average power

dissipation versus average on-state current

P(W)

12

11

α = 180°

10

9

8

7

6

5

4

3

2

1

0

0123456789

I (A)

T(AV)

TO-220AB 60

Figure 2. Average and DC on-state current

versus case temperature

I (A)

T(AV)

14

12

10

8

6

360°

α

4

2

0

0 25 50 75 100 125

Doc ID 7475 Rev 7 3/13

D.C.

α = 180°

T (°C)

case

Characteristics TN1215, TS1220, TYN612, TYN812, TYN1012

Figure 3. Average and D.C. on-state current

versus ambient temperature (DPAK)

I (A)

T(AV)

3.0

Device mounted on FR4 with

2.5

2.0

1.5

α = 180°

1.0

0.5

0.0

0 25 50 75 100 125

D.C.

2

DPAK

T (°C)

recommended pad layout

amb

Figure 5. Relative variation of thermal

impedance junction to ambient versus pulse duration (DPAK)

K=[Z /R

1.00

0.10

0.01

th(j-a) th(j-a)

Device mounted on FR4 with recommended pad layout

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

]

2

DPAK

t (s)

p

TO-220AB / IPAK

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1.0

0.5

0.2

0.1 1E-3 1E-2 1E-1 1E+0

]

t (s)

p

Figure 6. Relative variation of gate trigger

and holding current versus junction temperature for TS1220 series

I,I,I[T] /

GTHL j

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 120 140

I ,I ,I [T =25°C]

GT H L j

I

GT

T (°C)

j

IH& I

R = 1k

GK

L

Ω

Figure 7. Relative variation of gate trigger

Figure 8. Relative variation of holding and holding current versus junction temperature

I [R ] / I [ =1k ]

I,I,I[T] /

GTHL j

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -20 0 20 40 60 80 100 120 140

I ,I ,I [T =25°C]

GTHL j

I

GT

T (°C)

j

TN1215 and TYNx12 Series

IH& I

L

4/13 Doc ID 7475 Rev 7

HGK HΩRGK

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0 1E-2 1E-1 1E+0 1E+1

current versus gate-cathode resistance (typical values)

TS1220 Series

R(k)GKΩ

Tj= 25°C