ST TPDV640RG, TPDV840RG, TPDV1240RG User Manual

TPDVxx40

40 A high voltage Triacs

Features

■ On-state current (I

■ Max. blocking voltage (V

■ Gate current (I

■ Commutation @ 10 V/µs: up to 142 A/ms

■ Noise immunity: 500 V/µs

■ insulated package:

): 200 mA

GT

– 2,500 V rms (UL recognized: E81734).

T(RMS)

): 40 A

DRM/VRRM

): 1200 V

Description

The TPDVxx40 series use a high performance alternistor technology.

Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)

Table 1. Device summary

Parameter TPDV640RG TPDV840RG TPDV1240RG

Blocking voltage V

On-state current I

Gate current I

GT

DRM/VRRM

T(RMS)

600 V 800 V 1200 V

A1

40 A

200 mA

A2

G

A1

A2

G

TOP3 insulated

March 2011 Doc ID 18270 Rev 1 1/7

www.st.com

7

Characteristics TPDVxx40

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

2

I

tI

dI/dt

V

DRM

V

RRM

On-state rms current (180° conduction angle) Tc = 75 °C 40 A

= 2.5 ms

t Non repetitive surge peak on-state current

2

t value for fusing tp = 10 ms Tj = 25 °C 610 A2S

Critical rate of rise of on-state current IG = 500 mA , dIG/dt = 1 A/µs

p

= 25 °C

T

j

= 10 ms 350

t

p

Repetitive F = 50 Hz 20

Non repetitive 100

TPDV640

Repetitive peak off-state voltage

Tj = 125 °C

590

600

TPDV1240 1200

T

stg

T

j

T

L

V

INS(RMS)

1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Storage junction temperature range Operating junction temperature range

- 40 to + 150

- 40 to + 125

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

(1)

Insulation rms voltage 2500 V

Atp = 8.3 ms 370

A/µs

VTPDV840 800

°C

Symbol Test conditions Quadrant Value Unit

I

GT

V

GT

V

GD

t

gt

(1)

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

(dI/dt)c

VD = 12 V DC, RL = 33 Ω I - II - III

VD = V

RL = 3.3 kΩ T

DRM

= 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs

DRM IG

= 125 °C I - II - III MIN. 0.2 V

j

IT = 500 mA Gate open MAX. 50 mA

I - III

IG = 1.2 x IGT

II 200

Linear slope up to:

= 67 % V

V

D

(1)

ITM = 35 A tp = 380 µs MAX. 1.8 V

Gate open

DRM

T

= 125 °C MIN. 500 V/µs

j

Tj = 25 °C

V

= V

DRM

(dV/dt)c = 200 V/µs

(1)

RRM

= 125 °C 8 mA

T

j

Tj = 125 °C MIN.

MAX. 200 mA

MAX. 1.5 V

100

TYP.

20 µA

MAX.

35

(dV/dt)c = 10 V/µs 142

1. For either polarity of electrode A2 voltage with reference to electrode A1.

mA

A/ms

2/7 Doc ID 18270 Rev 1

TPDVxx40 Characteristics

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

P

G(AV)

P

GM

I

GM

V

GM

Table 5. Thermal resistance

Average gate power dissipation 1 W

Peak gate power dissipation tp = 20 µs 40 W

Peak gate current tp = 20 µs 8 A

Peak positive gate voltage tp = 20 µs 16 V

Symbol Parameter Value Unit

R

th(j-a)

R

th(j-c)

R

th(j-c)

Figure 1. Max. rms power dissipation versus

P(W)

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

Junction to ambient 50 °C/W

DC Junction to case for DC 1.2 °C/W

AC Junction to case for 360 °Conduction angle (F = 50 Hz) 0.9 °C/W

Figure 2. Max. rms power dissipation and on-state rms current (F = 50 Hz). (curves limited by (dI/dt)c)

α = 180°

α = 120°

α = 90°

α = 60°

α = 30°

I (A)

T(RMS)

180°

α

P(W)

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140

max. allowable temperatures (T

R = 0.75°C/W

th

amb

R = 0.5°C/W

th

and T

T (°C)

amb

case

R = 0.25°C/W

th

) for various R

R = 0°C/W

th

T (°C)

th

case

75

85

95

105

115

125

Figure 3. On-state rms current versus case

temperature

I (A)

T(RMS)

50

40

30

20

10

0

025 7550 100 125

α = 180°

T (°C)

case

Doc ID 18270 Rev 1 3/7

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1.00

0.10

0.01

0.0

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

]

Z

th(j-c)

Z

th(j-a)

t (s)

p