Datasheet TPDV640RG, TPDV840RG, TPDV1240RG Datasheet (ST)

TPDVxx40

40 A high voltage Triacs

Features

■ On-state current (I

■ Max. blocking voltage (V

■ Gate current (I

■ Commutation @ 10 V/µs: up to 142 A/ms

■ Noise immunity: 500 V/µs

■ insulated package:

): 200 mA

GT

– 2,500 V rms (UL recognized: E81734).

T(RMS)

): 40 A

DRM/VRRM

): 1200 V

Description

The TPDVxx40 series use a high performance
alternistor technology.

Featuring very high commutation levels and high
surge current capability, this family is well adapted
to power control on inductive load (motor,
transformer...)

Table 1. Device summary

Parameter TPDV640RG TPDV840RG TPDV1240RG

Blocking voltage V

On-state current I

Gate current I

GT

DRM/VRRM

T(RMS)

600 V 800 V 1200 V

A1

40 A

200 mA

A2

G

A1

A2

G

TOP3 insulated

March 2011 Doc ID 18270 Rev 1 1/7

www.st.com

7

Characteristics TPDVxx40

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

2

I

tI

dI/dt

V

DRM

V

RRM

On-state rms current (180° conduction angle) Tc = 75 °C 40 A

= 2.5 ms

t
Non repetitive surge peak on-state
current

2

t value for fusing tp = 10 ms Tj = 25 °C 610 A2S

Critical rate of rise of on-state current
IG = 500 mA , dIG/dt = 1 A/µs

p

= 25 °C

T

j

= 10 ms 350

t

p

Repetitive F = 50 Hz 20

Non repetitive 100

TPDV640

Repetitive peak off-state voltage

Tj = 125 °C

590

600

TPDV1240 1200

T

stg

T

j

T

L

V

INS(RMS)

1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Storage junction temperature range
Operating junction temperature range

- 40 to + 150

- 40 to + 125

Maximum lead temperature for soldering during 10s at 2mm from case 260 °C

(1)

Insulation rms voltage 2500 V

Atp = 8.3 ms 370

A/µs

VTPDV840 800

°C

Symbol Test conditions Quadrant Value Unit

I

GT

V

GT

V

GD

t

gt

(1)

I

H

I

L

dV/dt

V

TM

I

DRM

I

RRM

(dI/dt)c

VD = 12 V DC, RL = 33 Ω I - II - III

VD = V

VD = V

RL = 3.3 kΩ T

DRM

= 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs

DRM IG

= 125 °C I - II - III MIN. 0.2 V

j

IT = 500 mA Gate open MAX. 50 mA

I - III

IG = 1.2 x IGT

II 200

Linear slope up to:

= 67 % V

V

D

(1)

ITM = 35 A tp = 380 µs MAX. 1.8 V

Gate open

DRM

T

= 125 °C MIN. 500 V/µs

j

Tj = 25 °C

V

= V

DRM

(dV/dt)c = 200 V/µs

(1)

RRM

= 125 °C 8 mA

T

j

Tj = 125 °C MIN.

MAX. 200 mA

MAX. 1.5 V

100

TYP.

20 µA

MAX.

35

(dV/dt)c = 10 V/µs 142

1. For either polarity of electrode A2 voltage with reference to electrode A1.

mA

A/ms

2/7 Doc ID 18270 Rev 1

TPDVxx40 Characteristics

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

P

G(AV)

P

GM

I

GM

V

GM

Table 5. Thermal resistance

Average gate power dissipation 1 W

Peak gate power dissipation tp = 20 µs 40 W

Peak gate current tp = 20 µs 8 A

Peak positive gate voltage tp = 20 µs 16 V

Symbol Parameter Value Unit

R

th(j-a)

R

th(j-c)

R

th(j-c)

Figure 1. Max. rms power dissipation versus

P(W)

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

Junction to ambient 50 °C/W

DC Junction to case for DC 1.2 °C/W

AC Junction to case for 360 °Conduction angle (F = 50 Hz) 0.9 °C/W

Figure 2. Max. rms power dissipation and
on-state rms current (F = 50 Hz).
(curves limited by (dI/dt)c)

α = 180°

α = 120°

α = 90°

α = 60°

α = 30°

I (A)

T(RMS)

180°

α

α

P(W)

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140

max. allowable temperatures
(T

R = 0.75°C/W

th

amb

R = 0.5°C/W

th

and T

T (°C)

amb

case

R = 0.25°C/W

th

) for various R

R = 0°C/W

th

T (°C)

th

case

75

85

95

105

115

125

Figure 3. On-state rms current versus case

temperature

I (A)

T(RMS)

50

40

30

20

10

0

025 7550 100 125

α = 180°

T (°C)

case

Doc ID 18270 Rev 1 3/7

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1.00

0.10

0.01

0.0

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

]

Z

th(j-c)

Z

th(j-a)

t (s)

p

Characteristics TPDVxx40

Figure 5. Relative variation of gate trigger

current and holding current versus
junction temperature

I,I,I[T] /

GT H L j

2.5

2

1.5

1

0.5

0

I ,I ,I [T =25°C]

GT H L j

I

GT

IH& I

L

T (°C)

j

-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110 120 130

Figure 7. Non-repetitive surge peak on-state

current for a sinusoidal pulse and

2

t

T initial = 25°C

j

I (A), I t (A s)

TSM

10000

corresponding values of I

22

Figure 6. Non repetitive surge peak on-state

current versus number of cycles

I (A)

TSM

350

300

250

200

150

100

50

0

1 10 100 1000

T initial=25°C

j

Number of cycles

t =10ms

p

One cycle

Figure 8. On-state characteristics (maximum

values)

I (A)

TM

1000

Tj=max

100

1000

100

2

I t

1

I

TSM

t (ms)

p

2

510

Figure 9. Safe operating area below curve

(dV/dt)c(V/µs)

1000

100

10

1

1

T=25°C

10

1

123456

j

T initial = 25°C

j

V (V)

TM

T max.:

V =1.02V

t0

R =12m

(dI/dt)c(A/ms)

100

1000

j

Ω

d

4/7 Doc ID 18270 Rev 1

TPDVxx40 Package information

2 Package information

● Epoxy meets UL94,V0

● Cooling method: C (by conduction)

● Recommended torque value: 0.9 to 1.2 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. TOP3 insulated dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

H

A

A 4.4 4.6 0.173 0.181

R

ØL

K

B

B 1.45 1.55 0.057 0.061

C 14.35 15.60 0.565 0.614

D 0.5 0.7 0.020 0.028

G

F

E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650

G 20.4 21.1 0.815 0.831

P

C

H 15.1 15.5 0.594 0.610

J 5.4 5.65 0.213 0.222

JJ

D

E

K 3.4 3.65 0.134 0.144

ØL 4.08 4.17 0.161 0.164

P 1.20 1.40 0.047 0.055

R 4.60 typ. 0.181 typ.

Doc ID 18270 Rev 1 5/7

Ordering information TPDVxx40

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

TPDV640RG TPDV640

TOP3

insulated

TPDV1240RG TPDV1240

4.5 g 30 TubeTPDV840RG TPDV840

4 Revision history

Table 8. Document revision history

Date Revision Changes

30-mar-2011 1 First issue.

6/7 Doc ID 18270 Rev 1

TPDVxx40

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