ST TPDV640RG, TPDV840RG, TPDV1240RG User Manual

TPDVxx40

40 A high voltage Triacs

Features

■On-state current (IT(RMS)): 40 A

■Max. blocking voltage (VDRM/VRRM): 1200 V

■Gate current (IGT): 200 mA

■Commutation @ 10 V/µs: up to 142 A/ms

■Noise immunity: 500 V/µs

■insulated package:

– 2,500 V rms (UL recognized: E81734).

Description

The TPDVxx40 series use a high performance alternistor technology.

Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...)

A2

G

A1

A1

A2

G

TOP3 insulated

Table 1.	Device summary
	Parameter		TPDV640RG	TPDV840RG	TPDV1240RG
Blocking voltage VDRM/VRRM			600 V	800 V	1200 V
On-state current IT(RMS)				40 A
Gate current IGT				200 mA

March 2011

Doc ID 18270 Rev 1

1/7

www.st.com

Characteristics

TPDVxx40

1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (180° conduction angle)

Tc = 75 °C

40

A

Non repetitive surge peak on-state

tp = 2.5 ms

590

ITSM

tp = 8.3 ms

Tj = 25 °C

370

A

current

tp = 10 ms

350

I2t

I2t value for fusing

tp = 10 ms

Tj = 25 °C

610

A2S

dI/dt

Critical rate of rise of on-state current

Repetitive F = 50 Hz

20

A/µs

IG = 500 mA , dIG/dt = 1 A/µs

Non repetitive

100

TPDV640

600

VDRM

Repetitive peak off-state voltage

TPDV840

Tj = 125 °C

800

V

VRRM

TPDV1240

1200

Tstg

Storage junction temperature range

- 40 to + 150

°C

Tj

Operating junction temperature range

- 40 to + 125

TL

Maximum lead temperature for soldering during 10s at 2mm from case

260

°C

VINS(RMS)(1)

Insulation rms voltage

2500

V

1. A1, A2, gate terminals to case for 1 minute

Table 3.

Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

IGT

VD = 12 V DC, RL = 33 Ω

I - II - III

MAX.

200

mA

VGT

MAX.

1.5

V

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 125 °C

I - II - III

MIN.

0.2

V

tgt

VD = VDRM IG = 500 mA dIG/dt = 3 A/µs

I - II - III

TYP.

2.5

µs

I

(1)

I

= 500 mA

Gate open

MAX.

50

mA

H

T

IL

IG = 1.2 x IGT

I - III

TYP.

100

mA

II

200

dV/dt

Linear slope up to:

Tj = 125 °C

MIN.

500

V/µs

VD = 67 % VDRM Gate open

(1)

ITM = 35 A

tp = 380 µs

MAX.

1.8

V

VTM

I

Tj = 25 °C

20

µA

DRM

VDRM = VRRM

MAX.

IRRM

Tj = 125 °C

8

mA

(dI/dt)c (1)

(dV/dt)c = 200 V/µs

Tj = 125 °C

MIN.

35

A/ms

(dV/dt)c = 10 V/µs

142

1. For either polarity of electrode A2 voltage with reference to electrode A1.

2/7	Doc ID 18270 Rev 1

TPDVxx40			Characteristics
Table 4.	Gate characteristics (maximum values)
Symbol	Parameter		Value	Unit
PG(AV)	Average gate power dissipation		1	W
PGM	Peak gate power dissipation	tp = 20 µs	40	W
IGM	Peak gate current	tp = 20 µs	8	A
VGM	Peak positive gate voltage	tp = 20 µs	16	V
Table 5.	Thermal resistance
Symbol	Parameter		Value	Unit
Rth(j-a)	Junction to ambient		50	°C/W
Rth(j-c) DC	Junction to case for DC		1.2	°C/W
Rth(j-c) AC	Junction to case for 360 °Conduction angle (F = 50 Hz)		0.9	°C/W
Figure 1.	Max. rms power dissipation versus Figure 2.	Max. rms power dissipation and
	on-state rms current (F = 50 Hz).	max. allowable temperatures
	(curves limited by (dI/dt)c)	(Tamb and Tcase) for various Rth

P(W)									P(W)							Tcase(°C)
60									60
							α = 180°						Rth = 0.25°C/W
50									50							75
										Rth = 0.75°C/W				Rth = 0°C/W
					α = 120°
40									40	Rth = 0.5°C/W						85
				α = 90°												95
30									30
			α = 60°
20									20							105
		α = 30°					180°
10							α		10							115
							α					Tamb(°C)
				IT(RMS)(A)
																125
0									0
0	5	10	15	20	25	30	35	40	0	20	40	60	80	100	120	140

Figure 3. On-state rms current versus case Figure 4.	Relative variation of thermal
temperature	impedance versus pulse duration

IT(RMS)(A)						K=[Zth(j-c)/Rth(j-c)]
50						1.00
			α = 180°				Zth(j-c)
40
						0.10
30
20									Zth(j-a)
						0.01
10
0			Tcase(°C)			0.0			tp(s)
0	25	50	75	100	125	1E-3	1E-2	1E-1	1E+0	1E+1	1E+2	1E+3

Doc ID 18270 Rev 1

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