ST TPDV825RG, TPDV1025RG, TPDV1225RG User Manual

Features

TPDVxx25

25 A high voltage Triacs

■ On-state current (I

■ Max. blocking voltage (V

■ Gate current (I

■ Commutation @ 10 V/µs: up to 88 A/ms

■ Noise immunity: 2 kV/µs

■ Insulated package:

): 150 mA

GT

T(RMS)

): 25 A

DRM/VRRM

): 1200 V

– 2,500 V rms (UL recognized: E81734).

Description

The TPDVxx25 series use high performance alternistor technology.

Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans).

Table 1. Device summary

A2

G

A1

A2

G

TOP3 insulated

Parameter TPDV825RG TPDV1025RG TPDV1225RG

Blocking voltage V

On-state current I

Gate current I

GT

DRM/VRRM

T(RMS)

800 V 1000 V 1200 V

25 A

150 mA

January 2012 Doc ID 18268 Rev 2 1/7

www.st.com

7

Characteristics TPDVxx25

1 Characteristics

Table 2. Absolute maximum ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

2

I

tI

dI/dt

V

DRM

V

RRM

On-state rms current (180° conduction angle) Tc = 85 °C 25 A

= 2.5 ms

t Non repetitive surge peak on-state current

2

t value for fusing tp = 10 ms Tj = 25 °C 265 A

Critical rate of rise of on-state current

= 500 mA, dIG/dt = 1 A/µs

I

G

p

= 25 °C

T

j

= 10 ms 230

t

p

F = 50 Hz 100 A/µs

TPDV825

Repetitive peak off-state voltage

Tj = 125 °C

390

800

TPDV1225 1200

T

stg

T

j

V

INS(RMS)

1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Storage junction temperature range Operating junction temperature range

(1)

Insulation rms voltage 2500 V

- 40 to + 150

- 40 to + 125

Atp = 8.3 ms 250

VTPDV1025 1000

°C

2

S

Symbol Test conditions Quadrant Value Unit

I

GT

V

t

I

H

I

dV/dt Linear slope up to: V

V

TM

V

to

R

d

I

DRM

I

RRM

(dI/dt)c

VD = 12 V DC, RL = 33 Ω I - II - III

GT

VD = V

GD

VD = V

gt

(1)

IT = 500 mA Gate open TYP. 50 mA

IG = 1.2 x IGT

L

(1)

ITM = 35 A tp = 380 µs MAX. 1.8 V

(1)

Threshold voltage Tj = 125 °C MAX. 1.1 V

(1)

Dynamic resistance Tj = 125 °C MAX. 19 mΩ

V

DRM

(dV/dt)c = 200 V/µs

(1)

RL = 3.3 kΩ T

DRM

= 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs

DRM IG

= V

RRM

= 67% V

D

Gate open Tj = 125 °C MIN. 2000 V/µs

DRM

(dV/dt)c = 10 V/µs 88

1. For either polarity of electrode A2 voltage with reference to electrode A1.

= 125 °C I - II - III MIN. 0.2 V

j

I - III

II 200

Tj = 25 °C

T

= 125 °C 8 mA

j

= 125 °C MIN.

T

j

MAX. 150 mA

MAX. 1.5 V

100

TYP.

20 µA

MAX.

20

mA

A/ms

2/7 Doc ID 18268 Rev 2

TPDVxx25 Characteristics

)

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

P

G(AV)

P

GM

I

GM

V

GM

Table 5. Thermal resistance

Average gate power dissipation 1 W

Peak gate power dissipation tp = 20 µs 40 W

Peak gate current tp = 20 µs 8 A

Peak positive gate voltage tp = 20 µs 16 V

Symbol Parameter Value Unit

R

th(j-a)

R

th(j-c)

R

th(j-c)

Figure 1. Max. rms power dissipation versus

P(W)

40

Junction to ambient 50 °C/W

DC Junction to case for DC 1.5 °C/W

AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W

Figure 2. Max. rms power dissipation and on-state rms current (F = 50Hz). (curves limited by (dI/dt)c)

P(W)

40

Rth case to ambient -

max. allowable temperatures (T

amb

R = 1.5°C/W

th

and T

R = 1°C/W

th

) for various R

case

R = 0.5°C/W

R = 0°C/W

th

T (°C

th

case

85

30

α = 120°

20

10

0

α = 30°

0 5 10 15 20 25

α = 60°

α = 90°

I (A)

T(RMS)

α = 180°

180°

α

Figure 3. On-state rms current versus case

temperature

I (A)

T(RMS)

30

25

20

15

10

5

0

025 7550 100 125

α = 180°

T (°C)

case

30

20

10

T (°C)

0

0 20 40 60 80 100 120 140

amb

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1.00

0.10

0.01

0.0

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

]

Z

th(j-c)

Z

th(j-a)

t (s)

p

95

105

115

125

Doc ID 18268 Rev 2 3/7