ST TN22 User Manual

Features

■ High clamping voltage structure

(1200 to 1500 V)

■ Low gate triggering current for direct drive from

line (< 1.5 mA)

■ High holding current (> 175 mA), ensuring high

striking energy

Description

The TN22 has been specifically developed for use in tube lamp electronic starter circuits.

TN22

Fluorescent tube lamp starter SCR

1

3

TAB

IPAK

TN22-1500H

3

2

1

TAB

TO-220AB

TN22-1500T

2, TAB

1

3

2

Used in conjunction with a sensitive SCR, it provides high energy striking characteristics with low triggering power.

Thanks to the optimized characteristics of the TN22, starters based on this device can offer high reliability levels and extended life time of the fluorescent tube lamps.

TAB

2

3

1

DPAK

TN22-1500B-TR

August 2009 Doc ID 3768 Rev 3 1/13

www.st.com

13

Characteristics TN22

1 Characteristics

Table 1. Absolute ratings (limiting values)

Symbol Parameter Value Unit

V

I

T(RMS)

I

T(AV)

I

dl/dt

P

G(AV)

P

I

V

T

Table 2. Electrical characteristics (Tj = 25 °C unless otherwise stated)

Repetitive peak off-state voltage Tj = 110 °C 400 V

RRM

On-state rms current full sine wave (180° conduction angle)

Mean on-state current Full sinewave (180° conduction angle)

Non repetitive surge peak on-state current

TSM

(Tj initial = 25 °C)

2

tI2t Value for fusing tp = 10 ms 2 A2s

I

Critical rate of rise of on-state current

= 5 mA dIG/dt = 70 mA/µs

I

G

= 95 °C 2 A

T

c

T

= 95 °C 1.8 A

c

t

= 8.3 ms 22

p

t

= 10 ms 20

p

50 A/µs

Average gate power dissipation 300 mW

= 20 µs

Peak gate power dissipation

GM

Peak gate current

GM

Maximum peak reverse gate voltage 6 V

RGM

stg

Storage and operating junction temperature range

T

j

Maximum lead temperature for soldering during 10 s at 4.5 mm

T

L

from case

t

p

= 20 µs

t

p

2W

1A

-40 to +150

-40 to +110

260 °C

Symbol Test conditions Value Unit

I

V

dV/dt Linear slope up to V

V

Table 3. Static electrical characteristics (Tj = 25 °C unless otherwise stated)

VD=12 V (DC), RL= 33 Ω MAX 1.5 mA

GT

VD=12 V (DC), RL= 33 Ω, RGK = 1 KΩ MAX 3 V

GT

VGK = 0 V MIN 175 mA

I

H

BRID

= 5 mA, VGK = 0 V

= 67% V

D

DRM, VGK

= 0 V, Tj = 110 °C MIN 500 V/µs

MIN 1200

MAX 1500

Symbol Test conditions Value Unit

V

TMITM

I

DRMVDRM

Table 4. Thermal resistance

= 2 A tp = 380 µs MAX 3.1 V

rated MAX 0.1 mA

Symbol Parameter Value Unit

A

°C

V

R

th(j-a)

Junction to ambient

Junction to case 3 °C/W

th(j-c)

2/13 Doc ID 3768 Rev 3

DPAK / IPAK 100

TO-220AB 60

°C/W

TN22 Characteristics

Figure 1. Maximum average power

dissipation versus average on-state current (rectified sine wave)

P(W)

6

5

4

3

2

1

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

α=30 °

I

T(AV)

α=60 °

(A)

α=90 °

α=120 °

α=180 °

360°360°360°360°

Figure 3. Average on-state current versus

ambient temperature, free air convection (rectified full sine wave)

I

(A)

T(AV)

0.7

TO-220AB

0.6

0.5

0.4

0.3

DPAK / IPAK

0.2

0.1

0.0

0 102030405060 708090100110

T

(°C)

amb

α=180°

Figure 5. Relative variation of gate trigger

current and holding current versus junction temperature

IGT,IH[Tj]/IGT,IH[Tj=25°C]

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I

GT

I

H

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

typical values

Tj(°C)

Figure 2. Average on-state current versus

case temperature (rectified full sine wave)

I

(A)

T(AV)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

360°360°360°360°

0 102030405060 708090100110

α=180 °

TC(°C)

Figure 4. Variation of thermal impedance

junction to ambient versus pulse duration

Z

(°C/W)

th(j-a)

100.0

10.0

1.0

0.1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(s)

DPAK

IPAK

TO-220AB

Figure 6. Surge peak on-state current versus

number of cycles

I

(A)

TSM

22

20

18

16

14

12

10

8

6

4

Tjinitial=25 °C

2

0

1 10 100 1000

Number of cycles

tp=10ms

One cycle

Doc ID 3768 Rev 3 3/13

Characteristics TN22

0

Figure 7. Non-repetitive surge peak on-state

current for a sinusoidal pulse

I

(A), I²t (A²s)

TSM

1000

dI/dt limitation

50 A/µs

100

t < 10 ms and corresponding value of I t

p

10

1

0.01 0.10 1.00 10.00

2

tP(ms)

Tjinitial=25 °C

I

TSM

I²t

Figure 9. Maximum allowable rms current

versus time conduction and initial case temperature

I

(A)

T(RMS)

10

Tj max= 135 °C (the failure mode will be short circuit)

9

8

7

6

TCinitial=25°C

5

4

3

2

1

0

TCinitial=65°C

.1 1.

TCinitial=45°CTCinitial=45°C

tP(s)

10.

DPAK

IPAK

100.

Figure 8. On-state characteristics

(maximum values)

ITM(A)

100.0

10.0

1.0

0.1

012345678

Tj=110 °C

Tj=25 °C

VTM(V)

Tjmax. :

Vto= 2.5 V

= 235 mΩ

R

D

Figure 10. Maximum allowable rms current

versus time conduction and initial case temperature

I

(A)

T(RMS)

10

Tj max= 135 °C (the failure mode will be short circuit)

9

8

7

6

5

4

3

2

1

0

0.1 1.0 10.0 100.0

TCinitial=25°C

TCinitial=65°C

TCinitial=45°CTCinitial=45°C

tP(s)

TO-220AB

Figure 11. Holding current versus gate-cathode resistance (typical values)

IH(mA)

1000

100

10

RGK()

1

1 10 100 1000

Ω

4/13 Doc ID 3768 Rev 3

Tj=25 °C