ST TN1625, TYN616, TYN816 User Manual

TN1625 TYN616, TYN816

16 A standard SCRs

Features

■IT(RMS) =16 A

■VDRM/VRRM = 600 to 1000 V

■IGT = 25 mA

Description

The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications.

Using clip assembly technology, they provide a superior performance in surge current capabilities.

Table 1. Device summary

A

G

K

A

A

K A K

A

G G

D2PAK TO-220AB (TN1625-x00G) (TYNx16RG)

Parameter	TN1625-600G		TN1625-1000G	Unit
	TYN616RG	TYN816RG
VDRM/VRRM	600	800	1000	V
Sensitivity	25	25	25	mA

November 2007

Rev 6

1/9

www.st.com

Characteristics

TN1625, TYN616, TYN816

1

Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (180 °Conduction angle)

Tc = 110 °C

16

A

IT(AV)

Average on-state current (180 °Conduction angle)

Tc = 110 °C

10

A

ITSM

Non repetitive surge peak on-state current

tp = 8.3 ms

Tj = 25 °C

200

A

tp = 10 ms

190

I2t

I2t Value for fusing

tp = 10 ms

Tj = 25 °C

180

A2S

dI/dt

Critical rate of rise of on-state current

F = 60 Hz

Tj = 125 °C

50

A/µs

IG = 2 x IGT , tr ≤ 100 ns

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

4

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

- 40 to + 150

°C

Tj

Operating junction temperature range

- 40 to + 125

VRGM

Maximum peak reverse gate voltage

5

V

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test Conditions

Value

Unit

IGT

MIN.

2

mA

VD = 12 V

RL = 33 Ω

MAX.

25

VGT

MAX.

1.3

V

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 125 °C

MIN.

0.2

V

IH

IT = 500 mA

Gate open

MAX.

40

mA

IL

IG = 1.2 x IGT

MAX.

60

mA

dV/dt

VD = 67 % VDRM Gate open

Tj = 125 °C

MIN.

500

V/µs

VTM

ITM = 32 A

tp = 380 µs

Tj = 25 °C

MAX.

1.6

V

Vt0

Threshold voltage

Tj = 125 °C

MAX.

0.77

V

Rd

Dynamic resistance

Tj = 125 °C

MAX.

23

mΩ

I

Tj

= 25 °C

5

µA

DRM

VDRM = VRRM

MAX.

IRRM

T

= 125 °C

2

mA

j

Table 4.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

1.1

°C/W

Rth(j-a)

Junction to ambient (DC)

S = 01 cm2

D2PAK

45

°C/W

TO-220AB

60

S = copper surface under tab

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TN1625, TYN616, TYN816	Characteristics
Figure 1. Maximum average power	Figure 2. Average and D.C. on-state current
dissipation versus average on-state	versus case temperature
current

P(W)							IT(AV)(A)
16							18
α = 180°							16			D.C.
14
12							14
10							12
							10			α = 180°
8
							8
6							6
4						360°	4
2			IT(AV)(A)				2			Tcase(°C)
					α
0							0
0	2	4	6	8	10	12	0	25	50	75	100	125

Figure 3. Average and D.C. on-state current																			Figure 4. Relative variation of thermal
			versus ambient temperature																								impedance versus pulse duration
			(copper surface under tab: S=1cm2)
			(D2PAK)
4.0	IT(AV)(A)																		K=[Zth/Rth]
																			1.00
3.5																								Zth(j-c)
3.0
2.5						D.C.
2.0																			0.10
			α = 180°
1.5																																					Zth(j-a)
1.0
0.5
0.0										Tamb(°C)									0.01																						tp(s)
0		25							50			75		100			125		1E-3						1E-2								1E-1										1E+0								1E+1							1E+2 5E+2
Figure 5. Relative variation of gate trigger																			Figure 6. Surge peak on-state current versus
			current, holding current and																								number of cycles
			latching current versus junction
			temperature

IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]										ITSM(A)
2.5										200
										180
2.0										160			tp=10ms
										140			One cycle
1.5										120		Non repetitive
			IGT									Tj initial=25°C
										100
1.0		IH & IL								80	Repetitive
											TC=110°C
										60
0.5										40
				Tj(°C)						20		Number of cycles
										0
0.0
-40	-20	0	20	40	60	80	100	120	140	1	10	100	1000

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