ST TN1515-600B User Manual

Table 1. Main features

Symbol Value Unit

TN1515-600B

15 A standard SCR

A

I

T(RMS)

V

DRM/VRRM

I

GT (Q1)

15 A

600 V

15 mA

G

K

Description

Specifically designed to control motor in hand tools application, the TN15 SCR is available in DPAK package, providing a high robustness against stalled rotor operating conditions in a small SMD package

Table 2. Order code

Part number Marking

TN1515-600B-TR TN15 15600

TN1515-600B TN15 15600

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

I

T(RMS)

I

T(AV)

I

TSM

²

tI

I

dI/dt

I

GM

P

G(AV)

T

stg

T

V

RGM

RMS on-state current (180° conduction angle) Tc = 109° C 15 A

Average on-state current (180° conduction angle) Tc = 109° C 9.5 A

Non repetitive surge peak on-state current

²

t Value for fusing tp = 10 ms

Critical rate of rise of on-state current I

= 2 x IGT , tr ≤ 100 ns

G

Peak gate current tp = 20 µs Tj = 125° C 4 A

Average gate power dissipation Tj = 125° C 1 W

Storage junction temperature range Operating junction temperature range

j

Maximum peak reverse gate voltage 5 V

= 8.3 ms

t

p

= 10 ms 150

t

p

F = 120 Hz T

A

G

A

K

DPAK

TN1515

165

T

= 25° C

j

= 25° C

T

j

= 125° C 50 A/µs

j

113 A

- 40 to + 150

- 40 to + 125

A

°C

²

s

July 2007 Rev 2 1/7

www.st.com

7

Characteristics TN1515-600B

1 Characteristics

Table 4. Electrical characteristics (Tj = 25° C, unless otherwise specified)

Symbol Test conditions Values Unit

MIN. 2

I

GT

V

GT

V

GD

I

dV/dt V

V

TM

V

TO

R

I

DRM

I

RRM

Table 5. Thermal resistance

V

= 12 V, RL = 33 Ω Tj = 25° C

out

V

= 12 V, RL = 33 Ω

out

V

= V

out

DRM, RL

IT = 500 mA MAX. 40 mA

H

IG = 1.2 I

L

= 67% V

D

= 33 Ω Tj = 125° C MIN. 0.2 V

GT

gate open Tj = 125° C MIN. 200 V/µs

DRM,

MAX. 15

MAX. 1.3 V

MAX. 60 mA

ITM = 30 A, tp = 380 µs Tj = 25° C MAX. 1.6 V

Threshold voltage Tj = 125° C MAX. 0.85 V

Dynamic resistance Tj = 125° C MAX. 25 mΩ

D

Tj = 25° C

V

DRM

= V

RRM

Tj = 125° C 2 mA

MAX.

5µA

Symbol Parameter Value Unit

mA

R

th(j-c)

th(j-a)

Junction to case (DC) 1.2 °C/W

Junction to ambient S = 0.5 cm

Figure 1. Maximum power dissipation

versus average on-state current

(

)

P

W

14

α=180°

12

10

8

6

4

2

0

012345678910

I (A)

T(AV)

360°

2

70 °C/W

Figure 2. Average and DC on-state current

versus case temperature

I (A)

T(AV)

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125

D.C.

α=180°

TC(°C)

2/7

TN1515-600B Characteristics

Figure 3. Average and DC on-state

current versus ambient temperature, PCB FR4, copper thickness 35 µm

I (A)

T(AV)

2.5

D.C.

α=180°

T

amb

(°C)

2.0

1.5

1.0

0.5

0.0 0 25 50 75 100 125

SCU=0.5cm²

Figure 5. Relative variation of gate trigger

current, holding current and latching current versus junction temperature (typical values)

IGT,IH,IL[Tj]/IGT,IH,IL[Tj=25°C]

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I

GT

IH& I

L

Tj(°C)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100110 120130

Figure 4. Thermal impedance, junction to

ambient, versus pulse duration, PCB FR4, copper thickness 35 µm

)

(

Z

°C/W

th(j-a)

100

SCU= 0.5 cm²

10

tP(s)

1

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Figure 6. Surge peak on-state current versus

number of cycles

I

(A)

TSM

180

160

tp=10ms

One cycle

Repetitive T

=109°C

C

Non repetitive

initial=25°C

T

j

Number of cycles

140

120

100

80

60

40

20

0

1 10 100 1000

Figure 7. Non-repetitive surge peak

on-state current for a sinusoidal pulse with width t corresponding value of I

I

(A), I²t (A²s)

TSM

1.E+04

dI/dt limitation

1.E+03

1.E+02

0.01 0.10 1.00 10.00

tP(ms)

< 10 ms and

p

I

TSM

2

Tjinitial=25°C

I²t

Figure 8. On-state characteristics (maximum

values)

t

(

)

I

A

TM

100.0

10.0

Tj=125°C

1.0

0.1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

3/7

Tj=25°C

VTM(V)

Tjmax. :

V

to

R

D

= 0.85 V = 25 mΩ