ST TN1205T-600 User Manual
Features
■ High current density per square mm
Applications
TN1205T-600
12 A SCR
■ Overvoltage crowbar protection
■ Motor control circuits in power tools and
kitchen aids
■ Inrush current limiting circuits
Description
This device is mounted in DPAK and intended for
use in applications such as voltage regulators
circuits for motorbikes, overvoltage crowbar
protection, motor control circuits in power tools
and capacitive discharge ignition.
K
A
G
DPAK
TN1205T-600B
Table 1. Device summary
I
T(rms)
V
DRM/VRRM
I
GT
A
12 A
600 V
2 to 5 mA
October 2009 Doc ID 16339 Rev 1 1/8
www.st.com
8
Characteristics TN1205T-600
1 Characteristics
Table 2. Absolute ratings
(1)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
di/dt
P
T
1. Tj = 25 °C, unless otherwise specified
Table 3. Electrical characteristics
On-state rms current (180 °C conduction angle) Tc = 103 °C 12 A
Average on-state current(180 °C conduction angle) Tc = 103 °C 8 A
= 8.3 ms
t
Non repetitive surge peak on-state current
TSM
2
I
TI2T value for fusing tp = 10 ms 66 A2s
Critical rate of rise of on-state current
= 2 x IGT, tr ≤ 100 ns
I
G
I
Peak gate current tp = 20 µs Tc = 125 °C 4 A
GM
Average gate power dissipation Tj = 125 °C 1 W
G(AV)
Storage junction temperature range -40 to + 150
stg
Operating junction temperature range -40 to + 125
T
j
(1)
F = 60 Hz T
p
tp = 10 ms
= 125 °C 50 A/µs
j
120
115
A
°C
Symbol Test conditions Min. Typ. Max. Unit
VD = 12 V, RL = 33 Ω 25mA
I
GT
V
V
dV/dt V
VD = 12 V, RL = 33 Ω 1.3 V
GT
VD = V
GD
IT = 500 mA gate open 15 mA
I
H
I
L
DRM, RL
IG = 1.2 I
= 67% V
D
= 3.3 kΩ Tj = 125 °C 0.2 V
GT
gate open Tj = 125 °C 100 V/µs
DRM
30 mA
Gate controlled turn on time
t
GT
= 40 A, VD = V
I
TM
dI
/dt = 5 A/µs, RG = 68 Ω
G
DRM(MAX)
, IGT = 100 mA
1.2 µs
Circuit commutated turn off time
t
q
V
TMITM
V
T0
R
d
I
DRM
I
RRM
1. Tj = 25 °C, unless otherwise specified
= 67% V
V
D
dI
/dt = 30 A/µS, dVD/dt = 50 V/µs, RGK = 100 Ω
T
DRM(MAX)
, Tj = 125 °C, ITM = 20 A, VR = 25 V
55 µs
= 24 A, Tp = 380 µs 1.6 V
Threshold voltage Tj = 125 °C 0.85 V
Dynamyc restistance Tj = 125 °C 30 mΩ
Tj = 25 °C 5 µA
V
= V
DRM
RRM
= 125 °C 2 mA
T
j
2/8 Doc ID 16339 Rev 1
TN1205T-600 Characteristics
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
R
1. S = Copper surface under tab.
Figure 1. Maximum average power
Junction to case (DC) 1.8 °C/W
th(j-c)
Junction to ambient (DC) S
th(j-a)
(1)
= 0.5 cm
²
Figure 2. Average and DC on-state current
dissipation versus average
versus case temperature
70 °C/W
on-state current
Figure 3. Average DC on-state current
versus ambient temperature
Figure 4. Relative variation of thermal
impedance junction to case
versus pulse duration
Doc ID 16339 Rev 1 3/8
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