Page 1
7-51
7
BV
DSS
/R
DS(ON)ID(ON)VGS(th)
BV
DGS
(max) (min) (max) TO-92 TO-220
60V 1.5Ω 3.0A 2.0V TN0606N3 TN0606N5
100V 1.5Ω 3.0A 2.0V TN0610N3 —
†
MIL visual screening available
TN0606
TN0610
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Order Number / Package
Note:
1. See Package Outline section for dimensions
Package Options
Features
■ Low threshold — 2.0V max.
■ High input impedance
■ Low input capacitance — 100pF typical
■ Fast switching speeds
■ Low on resistance
■ Free from secondary breakdown
■ Low input and output leakage
■ Complementary N- and P-channel devices
Applications
■ Logic level interfaces – ideal for TTL and CMOS
■ Solid state relays
■ Battery operated systems
■ Photo voltaic drives
■ Analog switches
■ General purpose line drivers
■ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
TO-220
G
D
S
TAB: DRAIN
TO-92
S G D
Page 2
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Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
DRM
@ TC = 25°C °C/W °C/W
TO-92 0.8A 3.2A 1W 125 170 0.8A 3.2A
TO-220 3.0A 4.1A 45W 2.7 70 3.0A 4.1A
* I
D
(continuous) is limited by max rated Tj.
TN0606/TN0610
Thermal Characteristics
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Switching Waveforms and Test Circuit
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
TN0610 100
TN0606 60
V
GS(th)
Gate Threshold Voltage 0.6 2.0 V VGS = VDS, ID = 1mA
∆V
GS(th)
Change in V
GS(th)
with Temperature -4.5 mV/°CVGS = VDS, ID = 1mA
I
GSS
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current 10 µAV
GS
= 0V, VDS = Max Rating
1.0 mA V
GS
= 0V, VDS = 0.8 Max Rating
T
A
= 125°C (note 2)
I
D(ON)
ON-State Drain Current 1.2 2.0 VGS = 5V, VDS = 25V
3.0 6.7 V
GS
= 10V, VDS = 25V
15 V
GS
= 3V, ID = 0.25A
R
DS(ON)
1.5 2.0 VGS = 5V, ID = 0.75A
1.0 1.5 V
GS
= 10V, ID = 0.75A
∆R
DS(ON)
Change in R
DS(ON)
with Temperature 0.75 %/°CVGS = 10V, ID = 0.75A
G
FS
Forward Transconductance 0.4 0.5 VDS = 25V, ID = 1.0A
C
ISS
Input Capacitance 100 150
C
OSS
Common Source Output Capacitance 50 85
C
RSS
Reverse Transfer Capacitance 10 35
t
d(ON)
Turn-ON Delay Time 6
t
r
Rise Time 14
t
d(OFF)
Turn-OFF Delay Time 16
t
f
Fall Time 16
V
SD
Diode Forward Voltage Drop 0.8 1.8 V VGS = 0V, ISD = 1.5A
t
rr
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1.5A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
VV
GS
= 0V, ID = 1mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
VGS = 0V, VDS = 25V
f = 1 MHz
pF
Electrical Characteristics (@ 25°C unless otherwise specified)
VDD = 25V
ns ID = 1.5A
R
GEN
= 25Ω
Ω
Ω
Page 3
7-53
7
TN0606/TN0610
Typical Performance Curves
Output Characteristics
10
8
6
4
2
0102030 5040
VDS(volts)
I
(amperes)
D
Saturation Characteristics
10
8
6
4
2
0
5V
7V
4V
6V
8V
VDS(volts)
I
(amperes)
D
Maximum Rated Safe Operating Area
0.1
1.0
10
0.01
VDS(volts)
I
(amperes)
D
Thermal Response Characteristics
Thermal Resistance (normalized)
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1
tp(seconds)
Transconductance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
0
1102468
G
FS
(siemens)
ID(amperes)
Power Dissipation vs. Case Temperature
0 15010050
50
40
30
20
10
1257525
TCC)°(
D
P (watts)
5V
10V
7V
3V
6V
8V
9V
1 100010010
1102468
10V
3V
TO-220
TO-92
TO-220 (DC)
VGS =
V
DS
= 25V
TA = -55°C
T
A
= 25°C
T
A
= 150°C
TC = 25°C
TO-220
P
D
= 45W
T
C
= 25°C
V
GS
=
0
0
0
9V
TO-92 (DC)
TO-92
P
D
= 1W
T
C
= 25°C
Page 4
7-54
TN0606/TN0610
Typical Performance Curves
Gate Drive Dynamic Characteristics
Q (nanocoulombs)
G
V
GS
(volts)
T
j
GS(th)
V (normalized)
DS(ON)
R (normalized)
V
DS(th)
and R Variation with Temperature
C)°(
On-Resistance vs. Drain Current
(amperes)
D
(ohms)
DS(ON)
R
Variation with Temperature
DSS
DSS
BV (normalized)
C)°(T
j
Transfer Characteristics
V
GS
(volts)
I
(amperes)
D
Capacitance vs. Drain-to-Source Voltage
200
150
100
50
0
C (picofarads)
VDS(volts)
I
BV
0 10203040
0246810
10
8
6
4
2
0
-50 0 50 100 150
1.1
1.0
0.9
5
4
3
2
1
0
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0
10
8
6
4
2
0 0.5 1.0
1.5
2.0 2.5
-50 0 50 100 150
95 pF
VDS= 40V
VDS= 10V
172 pF
(th)
V @ 1mA
VGS= 5V
VGS= 10V
T
= -55
A
C
°
VDS= 25V
C
ISS
C
OSS
C
RSS
25
C
°
150
C
°
0246 108
R @ 10V, 0.75A
DS
f = 1MHz
0
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