ST TN1205H User Manual
TN1205H
High temperature 12 A SCRs
Datasheet − production data
Features
■ High junction temperature: T
■ Medium current SCRs
■ High noise immunity up to 150 °C
■ RoHS (2002/95/EC) compliant
■ 600 V V
DRM
, V
RRM
= 150 °C
j
Application
■ General purpose AC line load switching
■ Motor control circuits
■ Small home appliances
■ Lighting
■ Inrush current limiting circuits
■ Over-voltage crowbar protection
Description
Available in standard gate triggering levels, the
TN1205H SCR series has very high switching
capability up to junction temperature of 150 °C.
A
G
K
A
K
A
G
2
PAK
D
(TN1205H-6G)
Table 1. Device summary
Order code Package
TN1205H-6T TO-220AB
2
TN1205H-6G D
PA K
V
A
K
A
G
TO-220AB
(TN1205H-6T)
,
V
DRM
RRM
I
GT
600 V 2 to 5 mA
These products fit all modes of control found in
applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits.
These products are particulary adapted for use in
areas where the ambient temperature is high or
the ventilation low, or where an increase of power
density is required.
Through-hole or surface-mount packages provide
performance in a limited space area.
April 2012 Doc ID 018497 Rev 4 1/10
This is information on a product in full production.
www.st.com
10
Characteristics TN1205H
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
V
V
dI/dt
I
P
G(AV)
V
T
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle) 7.6 A
Non repetitive surge peak on-state current
TSM
2
I
tI2t Value for fusing tp = 10 ms 72 A2S
,
DSM
Non repetitive surge peak off-state voltage tp = 10 ms
RSM
Critical rate of rise of on-state current I
= 2 x IGT,
G
tr ≤ 100 ns
Peak gate current tp = 20 µs Tj = 150 °C 4 A
GM
TO220-AB,
D2PA K
t
= 8.3 ms
p
tp = 10 ms 120
F = 60 Hz T
= 136 °C
T
c
= 25 °C
T
j
= 150 °C 100 A/µs
j
Average gate power dissipation Tj = 150 °C 1 W
Maximum peak reverse gate voltage 5 V
RGM
Storage junction temperature range
stg
T
Operating junction temperature range
j
Maximum lead temperature for soldering during 10 s. 260 °C
T
L
12 A
126
, V
V
DRM
RRM
+100
- 40 to + 150 °C
A
V
Symbol Test conditions Value Unit
MIN. 2
I
GT
V
GT
V
GD
I
H
I
L
dV/dt V
t
gt
t
q
VD = 12 V, RL = 33 Ω
MAX. 5
VD = V
VD = V
, RL = 3.3 kΩ MAX. 1.3 V
DRM
, RL = 3.3 kΩ MIN. 0.2 V
DRM
IT = 500 mA gate open MAX. 20 mA
IG = 1.2 I
= 67% V
D
GT
DRM
gate open
T
= 125 °C
j
= 150 °C 100
T
j
MAX. 40 mA
200
MIN.
ITM = 40 A, VD = 500 V, IG = 100 mA, dIG/dt = 5 A/µs typ. 1.9 µs
VDM = 335 V, Tj =125 °C, ITM = 20 A, VR = 25 V, (dIT/dt)
dVD/dt = 50 V/µs, RGK = 100 Ω
= 30 A/µs,
Max
typ. 65 µs
mA
V/µs
2/10 Doc ID 018497 Rev 4
TN1205H Characteristics
Table 4. Static characteristics
Symbol Test conditions Value Unit
V
ITM = 24 A, tp = 380 µs Tj = 25 °C
T
V
Threshold voltage Tj = 150 °C 0.8 V
TD
Dynamic resistance Tj = 150 °C 30 mΩ
R
d
MAX.
1.6 V
Tj = 25 °C 5 µA
I
DRM
I
RRM
Table 5. Thermal resistance
V
DRM
= V
RRM
= 125 °C 1
T
j
= 150 °C 3
T
j
Symbol Parameter Value Max. Unit
R
R
1. S = Copper surface under tab
Figure 1. Maximum average power
Junction to case (DC) 1.3 °C/W
th(j-c)
Junction to ambient (DC)
th(j-a)
(1)
S
= 1 cm
2
D2PA K 4 5
TO-220AB 60
Figure 2. Average and DC on-state current
dissipation vs. average on-state
vs. case temperature
°C/W
current
P(W)
11
α = 180°
10
9
8
7
6
5
4
3
2
1
0
012345678
360°
α
I
(A)
T(AV)
I(A)
T(AV)
14
α
D.C.
= 180°
T (°C)
case
12
10
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
mA
Doc ID 018497 Rev 4 3/10
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