ST TN1205H User Manual

TN1205H

High temperature 12 A SCRs

Features

■High junction temperature: Tj = 150 °C

■Medium current SCRs

■High noise immunity up to 150 °C

■RoHS (2002/95/EC) compliant

■600 V VDRM, VRRM

Application

■General purpose AC line load switching

■Motor control circuits

■Small home appliances

■Lighting

■Inrush current limiting circuits

■Over-voltage crowbar protection

Description

Available in standard gate triggering levels, the TN1205H SCR series has very high switching capability up to junction temperature of 150 °C.

These products fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.

These products are particulary adapted for use in areas where the ambient temperature is high or the ventilation low, or where an increase of power density is required.

Through-hole or surface-mount packages provide performance in a limited space area.

Datasheet − production data

A

G

K

A

A

K A

K

G A

G

D2PAK

(TN1205H-6G) TO-220AB (TN1205H-6T)

Table 1.	Device summary
Order code		Package	VDRM,	IGT
			VRRM
TN1205H-6T		TO-220AB	600 V	2 to 5 mA
TN1205H-6G		D2PAK

April 2012

Doc ID 018497 Rev 4

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This is information on a product in full production.

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Characteristics	TN1205H

1 Characteristics

Table 2.	Absolute ratings (limiting values)
Symbol	Parameter						Value	Unit
IT(RMS)	On-state rms current (180° conduction angle)		TO220-AB,		Tc = 136 °C		12	A
			2
IT(AV)	Average on-state current (180° conduction angle)		D PAK				7.6	A
ITSM	Non repetitive surge peak on-state current		tp = 8.3 ms		Tj = 25 °C		126	A
			tp = 10 ms				120
I2t	I2t Value for fusing				tp = 10 ms		72	A2S
VDSM,	Non repetitive surge peak off-state voltage				tp = 10 ms		VDRM, VRRM	V
VRSM							+100
dI/dt	Critical rate of rise of on-state current IG = 2 x IGT,		F = 60 Hz		Tj = 150 °C		100	A/µs
	tr ≤ 100 ns
IGM	Peak gate current		tp = 20 µs		Tj = 150 °C		4	A
PG(AV)	Average gate power dissipation				Tj = 150 °C		1	W
VRGM	Maximum peak reverse gate voltage						5	V
Tstg	Storage junction temperature range						- 40 to + 150	°C
Tj	Operating junction temperature range
TL	Maximum lead temperature for soldering during 10 s.						260	°C
Table 3.	Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol	Test conditions						Value	Unit
IGT	VD = 12 V, RL = 33 Ω					MIN.	2	mA
						MAX.	5
VGT	VD = VDRM, RL = 3.3 kΩ					MAX.	1.3	V
VGD	VD = VDRM, RL = 3.3 kΩ					MIN.	0.2	V
IH	IT = 500 mA gate open					MAX.	20	mA
IL	IG = 1.2 IGT					MAX.	40	mA
dV/dt	VD = 67% VDRM gate open			Tj = 125 °C		MIN.	200	V/µs
				Tj = 150 °C			100
tgt	ITM = 40 A, VD = 500 V, IG = 100 mA, dIG/dt = 5 A/µs					typ.	1.9	µs
tq	VDM = 335 V, Tj =125 °C, ITM = 20 A, VR = 25 V, (dIT/dt)Max = 30 A/µs,					typ.	65	µs
	dVD/dt = 50 V/µs, RGK = 100 Ω

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TN1205H								Characteristics
Table 4.		Static characteristics
Symbol			Test conditions					Value	Unit
VT		ITM = 24 A, tp = 380 µs			Tj = 25 °C			1.6	V
VTD		Threshold voltage			Tj = 150 °C			0.8	V
Rd		Dynamic resistance			Tj = 150 °C		MAX.	30	mΩ
IDRM					Tj = 25 °C			5	µA
		VDRM = VRRM			Tj = 125 °C			1
IRRM									mA
					Tj = 150 °C			3
Table 5.		Thermal resistance
Symbol			Parameter					Value Max.	Unit
Rth(j-c)		Junction to case (DC)						1.3	°C/W
Rth(j-a)		Junction to ambient (DC)		S(1) = 1 cm2		D2PAK		45	°C/W
						TO-220AB		60

1. S = Copper surface under tab

Figure 1. Maximum average power dissipation vs. average on-state current

Figure 2. Average and DC on-state current vs. case temperature

11	P(W)									IT(AV)(A)
		α = 180°			360°					14
10																D.C.
										12
9					α
8
										10
7																α = 180°
6										8
5										6
4
3										4
2										2
1
								IT(AV)(A)															T		(°C)
0										0														case
	0	1	2	3	4	5	6	7	8	0	10	20	30	40	50	60	70	80	90	100	110	120	130		140	150

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