ST TDE1897C, TDE1898C User Manual

	TDE1897C
®	TDE1898C

0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH

0.5A OUTPUT CURRENT

18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN

OPEN GROUND PROTECTION

INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 45V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS

UNDERVOLTAGE LOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION

TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER

DESCRIPTION

The TDE1897C/TDE1898C is a monolithic Intelligent Power Switch in Multipower BCD Technol-

MULTIPOWER BCD TECHNOLOGY

Minidip	SIP9	SO20
	ORDERING NUMBERS:
TDE1897CDP	TDE1898CSP	TDE1897CFP
TDE1898CDP		TDE1898CFP

ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads.

Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications.

BLOCK DIAGRAM

September 2003

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TDE1897C - TDE1898C

PIN CONNECTIONS (Top view)

Minidip	SO20
SIP9

ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)

Symbol	Parameter	Value	Unit
VS	Supply Voltage (Pins 3 - 1) (TW < 10ms)	50	V
VS – VO	Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2)	internally limited	V
Vi	Input Voltage (Pins 7/8)	-10 to VS +10	V
Vi	Differential Input Voltage (Pins 7 - 8)	43	V
Ii	Input Current (Pins 7/8)	20	mA
IO	Output Current (Pins 2 - 1). See also ISC	internally limited	A
El	Energy from Inductive Load (TJ = 85°C)	200	mJ
Ptot	Power Dissipation. See also THERMAL CHARACTERISTICS.	internally limited	W
Top	Operating Temperature Range (Tamb)	-25 to +85	°C
Tstg	Storage Temperature	-55 to 150	°C

THERMAL DATA

Symbol	Description		Minidip	Sip	SO20	Unit
Rth j-case	Thermal Resistance Junction-case	Max.		10		°C/W
Rth j-amb	Thermal Resistance Junction-ambient	Max.	100	70	90	°C/W

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TDE1897C - TDE1898C

ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified)

Symbol	Parameter		Test Condition		Min.	Typ.	Max.	Unit
Vsmin 3	Supply Voltage for Valid	Idiag > 0.5mA @ Vdg1 = 1.5V			9		35	V
	Diagnostics
Vs 3	Supply Voltage (operative)				18	24	35	V
Iq 3	Quiescent Current	Vil				2.5	4	mA
	Iout = Ios = 0	Vih				4.5	7.5	mA
Vsth1	Undervoltage Threshold 1	(See fig. 1); Tamb = 0 to +85°C			11			V
Vsth2 3	Undervoltage Threshold 2	(See fig. 1); Tamb = 0 to +85°C					15.5	V
Vshys	Supply Voltage Hysteresis	(See fig. 1); Tamb = 0 to +85°C			0.4	1	3	V
Isc	Short Circuit Current	VS = 18 to 35V; RL = 1Ω			0.75		1.5	A
Vdon 3-2	Output Voltage Drop	@ Iout	= 625mA; Tj = 25°C			250	425	mV
		@ Iout	= 625mA; Tj = 125°C			400	600	mV
Ioslk 2	Output Leakage Current	@ Vi = Vil , Vo = 0V					300	μA
Vol 2	Low State Out Voltage	@ Vi = Vil; RL = ∞				0.8	1.5	V
Vcl 3-2	Internal Voltage Clamp (VS - VO)	@ IO = -500mA			45		55	V
Iold 2	Open Load Detection Current	Vi = Vih; Tamb = 0 to +85°C			1		6	mA
Vid 7-8	Common Mode Input Voltage	VS = 18 to 35V,			–7		15	V
	Range (Operative)	VS = Vid 7-8 < 37V
Iib 7-8	Input Bias Current	Vi = –7 to 15V; –In = 0V			–700		700	μA
Vith 7-8	Input Threshold Voltage	V+In > V–In			0.8	1.4	2	V
Viths 7-8	Input Threshold Hysteresis	V+In > V–In			50		400	mV
	Voltage
Rid 7-8	Diff. Input Resistance	@ 0 < +In < +16V; –In = 0V				400		KΩ
		@ –7 < +In < 0V; –In = 0V				150		KΩ
Iilk 7-8	Input Offset Current	V+In = V–In		+Ii	–20		+20	μA
		0V < Vi <5.5V		–Ii	–75	–25		μA
		–In = GND		+Ii		+10	+50	μA
		0V < V+In <5.5V		–Ii	–250	–125		μA
		+In = GND		+Ii	–100	–30		μA
		0V < V–In <5.5V		–Ii	–50	–15		μA
Voth1 2	Output Status Threshold 1	(See fig. 1)					12	V
	Voltage
Voth2 2	Output Status Threshold 2	(See fig. 1)			9			V
	Voltage
Vohys 2	Output Status Threshold	(See fig. 1)			0.3	0.7	2	V
	Hysteresis
Iosd 4	Output Status Source Current	Vout > Voth1, Vos = 2.5V			2		4	mA
Vosd 3-4	Active Output Status Driver	Vs – Vos @ Ios = 2mA;					5	V
	Drop Voltage	Tamb = -25 to 85°C
Ioslk 4	Output Status Driver Leakage	Vout < Voth2 , Vos = 0V					25	μA
	Current	VS = 18 to 35V
Vdgl 5/6	Diagnostic Drop Voltage	D1 / D2 = L @ Idiag = 0.5mA					250	mV
		D1 / D2 = L @ Idiag = 3mA					1.5	V
Idglk 5/6	Diagnostic Leakage Current	D1 / D2 =H @ 0 < Vdg < Vs					25	μA
		VS = 15.6 to 35V
Vfdg 5/6-3	Clamping Diodes at the	@ Idiag = 5mA; D1 / D2 = H					2	V
	Diagnostic Outputs.
	Voltage Drop to VS
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
All test not dissipative.
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SOURCE DRAIN NDMOS DIODE

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Vfsd 2-3	Forward On Voltage	@ Ifsd = 625mA		1	1.5	V
Ifp 2-3	Forward Peak Current	t = 10ms; d = 20%			2	A
trr 2-3	Reverse Recovery Time	If = 625mA di/dt = 25A/μs		200		ns
tfr 2-3	Forward Recovery Time			50		ns
THERMAL CHARACTERISTICS (*)
Θ Lim	Junction Temp. Protect.		135	150		°C
TH	Thermal Hysteresis			30		°C
SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*)
ton	Turn on Delay Time				100	μs
toff	Turn off Delay Time				20	μs
td	Input Switching to Diagnostic				100	μs
	Valid

Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested.

Figure 1

DIAGNOSTIC TRUTH TABLE

Diagnostic Conditions			Input	Output	Diag1	Diag2
Normal Operation			L	L	H	H
			H	H	H	H
Open Load Condition (Io < Iold)			L	L	H	H
			H	H	L	H
Short to VS			L	H	L	H
			H	H	L	H
Short Circuit to Ground (IO = ISC) (**)	TDE1897C		H	<H (*)	H	L
			H	H	H	H
	TDE1898C
				L	H	H
Output DMOS Open			L	L	H	H
			H	L	L	H
Overtemperature			L	L	H	L
			H	L	H	L
Supply Undervoltage (VS < Vsth1 in the falling phase of the sup-			L	L	L	L
ply voltage; VS < Vsth2 in the rising phase of the supply voltage)			H	L	L	L

(*) According to the intervention of the current limiting block.

(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897 uses Diag2 to signal such condition, TDE1898 does not.

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