®
TDA2822D
DUAL LOW-VOLTAGE POWER AMPLIFIER
SUPPLY VOLTAGE DOWN T O 1.8V
LOWCROSSOVER DISTORTION
LOW QUIESCENT CURRENT
BRIDGE OR STEREO CONFIGURATION
DESCRIPTION
The TDA2822D is a monolithic integrated circuit
in 8 lead (SO-8) package. It is intended for use as
dual audio power amplifier in portable cassette
ORDERING NUMBER:
players, radios and CD players
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
I
O
P
tot
T
stg
Supply Voltage 15 V
S
Peak Output 1 A
Total Power Dissipation T
, TjStorage and Junction Temperature -40 to 150 °C
= 50°C 0.5 W
amb
SO8
TDA2822D
APPLICATION CIRCUIT
September 2003
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TDA2822D
PIN CONNECTION
(Top view)
THERMAL DATA
Symbol Description Value Unit
R
th j-amb
Figure 1:
Thermal Resistance Junction-ambient Max 200 °C/W
Stereo Application and Test Circuit
Figure 2:
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Bridge Application and Test Circuit
TDA2822D
ELECTRICAL CHARACTERISTICS
(V
= 6V; T
S
= 25°C, unless otherwise specified.
amb
STEREO (Test circuit of fig. 1).
Symbol Parameter Test Condition Min. Typ. Max. Unit
V
S
I
d
V
O
I
b
P
O
d Distortion R
G
V
∆G
R
e
N
V
i
Supply Voltage 1.8 15 V
Total Quiescent Drain Current 15 mA
Quiescent Output Voltage 2.7 V
V
= 3V 1.2 V
S
Input Bias Current 100 nA
Output Power (each channel)
(f = 1KHz, d = 10%)
VS = 9V
V
R
= 32Ω VS = 4.5V
L
V
V
R
= 16Ω VS = 6V 170 220 mW
L
R
= 8Ω VS = 6V 300 380 mW
L
R
= 4Ω VS = 4.5V
L
V
= 32Ω PO = 40mW 0.2 %
L
R
= 16Ω PO = 75mW 0.2 %
L
R
= 8Ω PO = 150mW 0.2 %
L
= 6V
S
= 3V
S
= 2V
S
= 3V
S
300
120
60
20
5
320
110
Closed Loop Voltage Gain f = 1KHz 36 39 41 dB
Channel Balance ±1dB
Input Resistance f = 1KHz 100 KΩ
Total Input Noise Rs = 10kΩ B = Curve A 2 µV
R
= 10kΩ B = 22Hz to 22KHz 2.5 µV
s
SVR Supply Voltage Rejection f = 100Hz C1 = C2 = 100µF24 30 dB
C
s
Channel Separation f = 1KHz 50 dB
BRIDGE (Test circuit of fig.2)
mW
mW
mW
V
S
I
d
V
os
Supply Voltage 1.8 15 V
Total Quiescent Drain Current RL = ∞ 15 mA
Output Offset Voltage (between
RL = 8Ω ±80 mV
the outputs)
I
b
P
O
d Distortion R
G
V
R
e
N
Input Bias Current 100 nA
Output Power
(f = 1KHz, d = 10%)
VS = 9V
V
R
= 32Ω VS = 4.5V
L
V
V
R
= 16Ω VS = 6V
L
RL = 16W V
R
= 8Ω VS = 4.5V
L
RL = 8W V
R
= 4Ω VS = 3V
L
RL = 4W V
= 8Ω PO = 0.5W f = 1KHz 0.2 %
L
= 6V
S
= 3V
S
= 2V
S
= 3V
S
= 3V
S
= 2V
S
320
50
1000
400
200
65
8
800
120
700
220
350
80
mW
mW
mW
mW
mW
mW
mW
Closed Loop Voltage Gain f = 1KHz 39 dB
Input Resistance f = 1KHz 100 KΩ
i
Total Input Noise Rs = 10kΩ B = Curve A 2.5 µV
R
= 10kΩ B = 22Hz to 22KHz 3 µV
s
SVR Supply Voltage Rejection f = 100Hz 40 dB
B Power Bandwidth (-3dB) R
= 8Ω PO = 1W 120 KHz
L
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TDA2822D
Figure 3:
Figure 5:
Supply Voltage Rejection vs. Fre-
quency
Total Power Dissipation vs. Output
Power (Bridge)
Figure 4:
Figure 6:
Output Power vs. Supply Voltage (THD
= 10%, f = 1KHz Stereo)
Total Power Dissipation vs. Output
Power (Bridge)
4/6
TDA2822D
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.069
a1 0.1 0.25 0 .004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45° (typ.)
D (1) 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F (1) 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8° (max.)
mm inch
OUTLINE AND
MECHANICAL DATA
SO8
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
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TDA2822D
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of use of such i nformation nor for any i nfringement of patents or ot her rights of third par ties which may result from its use. No license i s
granted by imp lication or otherwi se under a ny patent or patent rights of STMicro electronics . Speci fications ment ioned in this publicat ion are
subject to change without notic e. This public ation supers edes and replaces all information prev iously supplied. STMic roelec tronic s products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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