ST STPS3L60 User Manual

Features
STPS3L60
Power Schottky rectifier
Negligible switching losses
Low forward voltage drop
Description
Axial and surface mount power Schottky rectifier suited for switch mode power supplies and high frequency dc to dc converters. Packaged in DO-201AD, DO-15, SMB and SMBflat, this device is intended for use in low voltage, high frequency inverters and small battery chargers and for applications where there are space constraints, for example telecom battery charger.
A
K
DO-201AD
STPS3L60
A
K
SMB
STPS3L60U

Table 1. Device summary

I
3 A
F(AV)
V
RRM
150 °C
T
j (max)
V
F (max)
A
K
DO-15
STPS3L60Q
A
K
SMBflat
STPS3L60UF
60 V
0.61 V
June 2009 Doc ID 7505 Rev 6 1/11
www.st.com
11
Characteristics STPS3L60

1 Characteristics

Table 2. Absolute ratings

(1)
Symbol Parameter Value Unit
V
I
F(RMS)
Repetitive peak reverse voltage 60 V
RRM
RMS forward current 10 A
TL = 105 °C δ = 0.5 (DO-201AD, SMB)
T
= 72 °C δ = 0.5
Average forward current
I
F(AV)
L
(DO-15)
= 127 °C δ = 0.5
T
L
3A
(SMBflat)
I
Surge non repetitive forward current t
FSM
P
T
Repetitive peak avalanche power
ARM
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature
T
j
= 10 ms Sinusoidal 100 A
p
= 1 µs Tj = 25 °C
t
p
(2)
2000 W
150 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
1. limiting values, per diode
dPtot
---------------
2. condition to avoid thermal runaway for a diode on its own heatsink
dTj

Table 3. Thermal resistance

1
--------------------------
<
Rth j a–()
Symbol Parameter Value Unit
SMBflat 10
SMB 20
Junction to leads
R
th (j-l)
DO-201AD 20
°C/W
Lead length = 10 mm
DO-15 35
2/11 Doc ID 7505 Rev 6
STPS3L60 Characteristics

Table 4. Static electrical characteristics

Symbol Parameter Tests Conditions Min. Typ. Max. Unit
T
= 25 °C
j
(1)
IR
V
Reverse leakage current
(1)
Forward voltage drop
F
= 100 °C
T
j
T
= 125 °C
j
T
= 25 °C
j
= 100 °C
T
j
= 125 °C
T
j
T
= 25 °C
j
T
= 100 °C
j
T
= 125 °C
j
1. Pulse test :tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.44 x I
F(AV)
+ 0.05 x I
F2(RMS)
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
--150
= V
V
R
RRM
-415
-1430
--0.62
IF = 3 A
-0.530.61
-0.510.59
--0.79
IF = 6 A
-0.620.71
-0.60.69
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5)
(DO-201AD, SMB)
I (A)
F(AV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
R=R
R =80°C/W
th(j-a)
th(j-a) th(j-I)
T (°C)
amb
µA
mA
V
Doc ID 7505 Rev 6 3/11
Characteristics STPS3L60
Figure 3. Average forward current versus
ambient temperature (
δ = 0.5)
(DO-15)
I (A)
F(AV)
3.5
Rth(j-a)=Rth(j-l)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Rth(j-a)=100°C/W
T (°C)
amb
0 25 50 75 100 125 150
Figure 5. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 4. Average forward current versus
ambient temperature (δ = 0.5) (SMBflat)
I (A)
F(AV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
Rth(j-a)=100°C/W
T (°C)
amb
Rth(j-a)=Rth(j-l)
Figure 6. Normalized avalanche power
derating versus junction temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 7. Non repetitive surge peak forward
current versus overload duration (maximum values) (DO-201AD)
I (A)
M
12
10
8
6
4
IM
2
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
4/11 Doc ID 7505 Rev 6
Ta=25°C
Ta=50°C
Ta=100°C
Figure 8. Non repetitive surge peak forward
current versus overload duration (maximum values) (DO-15)
I (A)
M
11
10
9
8
7
6
5
4
3
IM
2
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
Ta=25°C
Ta=50°C
Ta=100°C
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