ST STPS3H100 User Manual
Features
■ Negligible switching losses
■ High junction temperature capability
■ Low leakage current
■ Good trade-off between leakage current and
forward voltage drop
■ Avalanche capability specified
Description
These Schottky rectifiers are designed for high
frequency miniature switched mode power
supplies such as adaptators and on board DC/DC
converters. They are available in SMB, and lowprofile SMB.
STPS3H100
Power Schottky rectifier
A
K
SMB
STPS3H100U
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
(max) 175 °C
j
(max) 0.68 V
V
F
A
K
SMB flat
STPS3H100UF
3 A
100 V
January 2010 Doc ID 16776 Rev 1 1/9
www.st.com
9
Characteristics STPS3H100
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(AV)
I
P
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Average forward current
Surge non repetitive forward current tp =10 ms sinusoidal 75 A
FSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400 W
ARM
Storage temperature range -65 to + 175 °C
stg
Operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
SMB T
SMB flat T
(1)
= 115 °C δ = 0.5
L
= 140 °C δ = 0.5
L
3A
175 °C
Symbol Parameter Value Unit
SMB 25
R
Table 4. Static electrical characteristics
th(j-l)
Junction to lead
SMB flat 15
°C/W
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25 °C
j
T
= 125 °C - 0.4 1 mA
j
= 25 °C
T
j
T
= 125 °C - 0.63 0.68
j
T
= 25 °C
j
= 125 °C - 0.71 0.76
T
j
V
R
= 3 A
I
F
= 6 A
I
F
= V
RRM
--1µA
- - 0.84
- - 0.92
V
To evaluate the conduction losses use the following equation:
P = 0.6 x I
2/9 Doc ID 16776 Rev 1
F(AV)
+ 0.027 I
F2(RMS)
STPS3H100 Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
δ=0.05
I (A)
F(AV)
δ=0.1
δ=0.2
δ
=tp/T
δ=0.5
δ=1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
3.5
R
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
tp
=tp/T
δ
0 25 50 75 100 125 150 175
th(j-a)=Rth(j-l)
T (°C)
amb
SMB flatSMB flat
SMBSMB
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
I (A)
M
12
11
10
9
8
7
6
5
4
3
I
M
2
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
SMB
Ta=25 °C
Ta=75 °C
Ta=125 °C
Doc ID 16776 Rev 1 3/9
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB flat)
I (A)
M
40
35
30
25
20
15
10
I
M
5
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
SMB flat
TL=25 °C
TL=75 °C
TL=125 °C
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