ST STPS30M60DJF User Manual

STPS30M60DJF

High efficiency power Schottky diode

Datasheet − production data

Features

■ Very low conduction losses

■ Low forward voltage drop

■ Low thermal resistance

■ High specified avalanche capability

■ High integration

■ ECOPACK

®

2 compliant component

Description

The STPS30M60DJF is a power Schottky rectifier, suited for high frequency switch mode power supply and DC to DC converters.

Packaged in PowerFLAT™, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints.

A

K

A

PowerFLAT 5x6

STPS30M60DJF

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(typ) 0.46 V

V

F

(max) 150 °C

T

j

K

A

30 A 60 V

TM: PowerFLAT is a trademark of STMicroelectronics

April 2012 Doc ID 023120 Rev 1 1/8

This is information on a product in full production.

www.st.com

8

Characteristics STPS30M60DJF

1 Characteristics

Table 2. Absolute ratings (limiting values, anode terminals 1 and 3 short circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

ARM

V

T

1. More details regarding the avalanche energy measurements and diode validation in the avalanche are

2. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 45 A Average forward current δ = 0.5 Tc = 100 °C 30 A

Surge non repetitive forward current tp = 10 ms sinusoidal 250 A

FSM

(1)

Repetitive peak avalanche power 3500 W

Maximum repetitive peak avalanche

ARM

voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

provided in the STMicroelectronics’ application notes AN1768 and AN2025.

dPtot

dTj

<

Rth(j-a)

1

tp < 1 µs, Tj < 150 °C IAR < 13 A

(2)

80 V

150 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics (anode terminals short circuited)

Junction to case 2.0 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 25 °C

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

j

= 125 °C - 20 50 mA

T

j

= 25 °C

T

j

T

= 125 °C - 0.46 0.52

j

= 25 °C

T

j

T

= 125 °C - 0.57 0.67

j

VR = V

= 15 A

I

F

= 30 A

I

F

To evaluate the conduction losses use the following equation: P = 0.55 x I

2/8 Doc ID 023120 Rev 1

+ 0.004 x I

F(AV)

F2(RMS)

- - 90 µA

RRM

- - 0.59

V

- - 0.72

STPS30M60DJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

30

25

20

15

10

5

0

δ = 0.05

0 5 10 15 20 25 30 35 40

δ = 0.2

δ = 0.1

δ = 0.5

δ = t / T

p

I (A)

F(AV)

δ = 1

T

t

p

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

30

25

20

15

10

5

0

T

δ = t / T

0 25 50 75 100 125 150

t

p

R= R

th(j-a) th(j-c)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)

M

280

240

200

160

T = 25 °C

120

80

I

M

40

0

1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

c

T = 75 °C

c

T = 125 °C

c

t(s)

Doc ID 023120 Rev 1 3/8

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p