
STPS30M100S
100 V, 30 A power Schottky rectifier
Features
■ Avalanche rated
■ Low V
■
F
Good trade off between leakage current and
forward voltage drop
■ High frequency operation
■ Avalanche capability specified
Description
The STPS30M100S device is a single Schottky
rectifier, suited for high frequency switch mode
power supply.
X
(a)
V
F(2xIo)
V
2
PA K
Packaged in TO-220AB, TO-220FPAB, and I
this device is intended to be used in notebook and
game station adaptors, providing in these
applications a good efficiency at both low and
high load.
Figure 1. Electrical characteristics
2 x I
I
"Forward"
O
I
F
I
O
I
R
V
To
I
AR
V
F(Io)
X
V
F
V
I
V
RRM
V
V
AR
R
"Reverse"
A
A
K
A
K
A
TO-220AB
STPS30M100ST
STPS30M100SFP
I2PAK
STPS30M100SR
Table 1. Device summary
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.385 V
V
F
K
A
TO-220FPAB
A
K
A
30 A
100 V
A
K
a. V
and I
ARM
operating area defined in Figure 14. V
pulse measurements (t
are static characteristics
must respect the reverse safe
ARM
< 1 µs). VR, IR, V
p
and IAR are
AR
and VF,
RRM
January 2011 Doc ID 15523 Rev 3 1/10
www.st.com
10

Characteristics STPS30M100S
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ASM
T
T
1. Refer to Figure 14.
dPtot
---------------
2. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
Forward rms current 60 A
Average forward current δ = 0.5 Tc = 125 °C 30 A
Surge non repetitive forward current tp = 10 ms sinusoidal 300 A
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 26400 W
Maximum repetitive peak avalanche
(1)
voltage
Maximum single pulse peak avalanche
(1)
voltage
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
j
1
--------------------------
<
Rth j a–()
tp < 1 µs Tj < 150 °C
< 66 A
I
AR
tp < 1 µs Tj < 150 °C
IAR < 66 A
(2)
120 V
120 V
150 °C
Symbol Parameter Value Unit
TO-220AB, I2PA K 1
R
Table 4. Static electrical characteristics with all leads connected on board
th(j-c)
Junction to case
TO-220FPAB 4
°C/W
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25 °C
T
j
T
= 125 °C - 20 50 mA
j
= 25 °C
T
j
T
= 125 °C - 10 20 mA
j
T
= 25 °C
j
= 125 °C - 0.385 -
T
j
= 25 °C
T
j
T
= 125 °C - 0.475 --
j
= 25 °C
T
j
Tj = 125 °C - 0.525 0.565
T
= 25 °C
j
= 125 °C - 0.605 0.655
T
j
= V
V
R
RRM
= 70 V
V
R
I
= 5 A
F
= 10 A
I
F
= 15 A
I
F
IF = 30 A
--175µA
- - 60 µA
- 0.475 -
- 0.555 -
- 0.620 0.660
- 0.740 0.800
V
2/10 Doc ID 15523 Rev 3

STPS30M100S Characteristics
To evaluate the conduction losses use the following equation:
P = 0.475 x I
Figure 2. Conduction losses versus average
current
PF(av)(W)
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 4 8 12162024283236
δ=0.05
δ=0.1 δ=0.2
F(AV)
I (av)(A)
F
+ 0.006 x I
δ=0.5 δ=1
δ
F2(RMS)
T
=t /T
p
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
(av)(A)
I
F
35
R
30
25
20
15
10
t
p
5
0
T
t
=tp/T
δ
0 25 50 75 100 125 150
p
th(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values)
I
(A)
M
350
300
250
200
150
100
I
M
50
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ
=0.5
t(s)
T0-220AB / I2PAK
Tc=25°C
Tc=75°C
Tc=125°C
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
T0-220AB / I2PAK
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
Doc ID 15523 Rev 3 3/10