ST STPS30L45C User Manual
STPS30L45C
Low drop power Schottky rectifier
Features
■ low forward voltage drop meaning very small
conduction losses
■ low switching losses allowing high frequency
operation
■ low thermal resistance
■ avalanche rated
■ insulated package TO-220FPAB:
– insulating voltage = 2000 V DC
– capacitance = 45 pF
■ avalanche capability specified
Description
Dual center tap Schottky rectifier suited for
switched mode power supplies and high
frequency DC to DC converters.
Packaged in TO-247, TO-220AB, TO-220FPAB,
2
D
PAK and I2PAK this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection applications.
K
2
PA K
I
STPS30L45CR
A1
TO-220AB
STPS30L45CT
TO-220FPAB
STPS30L45CFP
A1
K
A2
K
2
PAK
A2
A1
A2
A1
D
STPS30L45CG
A2
K
A2
K
A1
TO-247
STPS30L45CW
A2
K
A1
Table 1. Device summary
I
F(AV)
V
RRM
T
(max) 150 °C
j
(max) 0.5 V
V
F
2 x 15 A
45 V
October 2010 Doc ID 8002 Rev 4 1/12
www.st.com
12
Characteristics STPS30L45C
d
-
1 Characteristics
Table 2. Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
RRM
I
RSM
P
T
Repetitive peak reverse voltage 45 V
RRM
Forward rms current 30 A
Average forward
current
Surge non repetitive forward current tp = 10 ms Sinusoidal 220 A
FSM
TO-220AB, TO-247,
2
PAK, D2PA K
I
TO-220FPAB T
=110 °C, δ = 0.5
c
Tc = 135 °C, δ = 0.5
Per diode
Per device
Repetitive peak reverse current tp = 2 µs square F = 1 kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 3 A
Repetitive peak avalanche power tp = 1 µs T
ARM
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature
T
j
(1)
= 25 °C 6000 W
j
15
30
150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()
Table 3. Thermal resistances
Symbol Parameter Value Unit
A
R
R
th(j-c)
th(c)
TO-220FPAB
Junction to case
2
TO-220AB, TO-247, I
PAK, D2PA K
TO-220FPAB 2.5
Coupling
TO-220AB, TO-247, I
2
PAK, D2PA K 0 .1 0
When the diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode1) x R
j
(Per diode) + P(diode 2) x R
th(j-c)
Per diode
To ta l
Per diode
To ta l
4
3.2
°C/W
1.60
0.85
°C/W
th(c)
2/12 Doc ID 8002 Rev 4
STPS30L45C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1)
I
R
V
F
Reverse leakage current
(1)
Forward voltage drop
Tj = 25 °C
VR = V
= 125 °C 100 200 mA
T
j
= 25 °C IF = 15 A 0.55
T
j
T
= 125 °C IF = 15 A 0.42 0.50
j
= 25 °C IF = 30 A 0.74
T
j
= 125 °C IF = 30 A 0.59 0.67
T
j
RRM
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.330 x I
Figure 1. Average forward power dissipation
PF(av)(W)
12
10
8
6
4
2
0
02468101214161820
versus average forward current
(per diode)
δ = 0.1
δ = 0.05
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
Figure 2. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
IF(av)(A)
18
16
14
12
10
8
6
4
tp
2
=tp/T
δ
0
0 25 50 75 100 125 150
Rth(j-a)=15°C/W
T
tp
F(AV)
Rth(j-a)=Rth(j-c)
Tamb(°C)
+ 0.011 I
0.4 mA
F2(RMS)
TO-220AB/TO-247/I²PAK/D²PAK
TO-220FPAB
V
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
Doc ID 8002 Rev 4 3/12
T (°C)
j
Characteristics STPS30L45C
1
Figure 5. Non repetitive surge peak forward
current versus overload duration
IM(A)
200
180
maximum values, per diode
160
140
120
100
80
60
I
M
40
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
0.8
Figure 6. Non repetitive surge peak forward
current versus overload duration
(TO-220FPAB only)
IM(A)
140
maximum values, per diode
120
100
80
60
40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
T
=tp/T
Figure 9. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
IR(mA)
5E+2
1E+2
1E+1
1E+0
1E-1
1E-2
0 5 10 15 20 25 30 35 40 45
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=25°C
VR(V)
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
tp
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+
tp(s)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
2000
1000
500
200
VR(V)
100
12 51020 50
δ
=tp/T
T
F=1MHz
Tj=25°C
tp
4/12 Doc ID 8002 Rev 4
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