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STPS30L40CG/CT/CW |
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LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
IF(AV) |
2 x 15 A |
VRRM |
40 V |
Tj (max) |
150 °C |
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VF (max) |
0.50 V |
FEATURES AND BENEFITS
nVERY SMALL CONDUCTION LOSSES
nNEGLIGIBLE SWITCHING LOSSES
nLOW FORWARD VOLTAGE DROP
nLOW THERMAL RESISTANCE
nAVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-247, TO-220AB and D2PAK these devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1 |
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K |
K |
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A2 |
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A2 |
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A1 |
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D2PAK |
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STPS30L40CG |
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A2 |
A2 |
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A1 K |
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A1 |
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TO-220AB |
TO-247 |
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STPS30L40CT |
STPS30L40CW |
ABSOLUTE RATINGS (limiting values, per diode)
Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
Repetitive peak reverse voltage |
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40 |
V |
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IF(RMS) |
RMS forward current |
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30 |
A |
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IF(AV) |
Average forward current |
Tc = 135°C |
Per diode |
15 |
A |
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δ = 0.5 |
Per device |
30 |
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IFSM |
Surge non repetitive forward current |
tp = 10 ms Sinusoidal |
220 |
A |
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IRRM |
Repetitive peak reverse current |
tp = 2 µs square F=1kHz |
1 |
A |
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IRSM |
Non repetitive peak reverse current |
tp = 100 µs square |
3 |
A |
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PARM |
Repetitive peak avalanche power |
tp = 1µs Tj = 25°C |
6000 |
W |
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Tstg |
Storage temperature range |
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- 65 to + 150 |
°C |
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Tj |
Maximum operating junction temperature * |
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150 |
°C |
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dV/dt |
Critical rate of rise of reverse voltage |
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10000 |
V/µs |
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* : |
dPtot |
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1 |
thermal runaway condition for a diode on its own heatsink |
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dTj |
Rth( j − a) |
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July 2003 - Ed: 4A |
1/6 |
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STPS30L40CG/CT/CW
THERMAL RESISTANCES
Symbol |
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Parameter |
Value |
Unit |
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Rth (j-c) |
Junction to case |
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Per diode |
1.60 |
°C/W |
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Total |
0.85 |
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Rth (c) |
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Coupling |
0.10 |
°C/W |
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When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameter |
Tests Conditions |
Min. |
Typ. |
Max. |
Unit |
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IR * |
Reverse leakage cur- |
Tj = 25°C |
V R = VRRM |
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360 |
µA |
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Tj = 100°C |
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20 |
50 |
mA |
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VF * |
Forward voltage drop |
Tj = 25°C |
I F = 15 A |
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0.55 |
V |
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Tj = 125°C |
I F = 15 A |
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0.42 |
0.50 |
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Tj = 25°C |
I F = 30 A |
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0.74 |
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Tj = 125°C |
I F = 30 A |
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0.59 |
0.67 |
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Pulse test : |
* tp = 380 µs, δ < 2% |
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To evaluate the conduction losses use the following equation :
P = 0.330 x IF(AV) + 0.011 IF2(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) |
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12 |
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δ = 0.2 |
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δ = 0.1 |
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δ = 0.5 |
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δ = 0.05 |
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8 |
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δ = 1 |
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4 |
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T |
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2 |
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IF(av)A |
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δ=tp/T |
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tp |
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0 |
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2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
20 |
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0 |
Fig. 2: Average current versus ambient temperature (δ=0.5) (per diode).
IF(av)(A) |
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18 |
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16 |
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Rth(j-a)=Rth(j-c) |
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14 |
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12 |
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10 |
Rth(j-a)=15°C/W |
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8 |
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6 |
T |
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4 |
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2 |
δ=tp/T |
tp |
Tamb(°C) |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
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0 |
2/6