ST STPS30L30DJF User Manual

Features

STPS30L30DJF

High efficiency power Schottky diode

Datasheet − production data

■ Low forward voltage drop

■ Very small conduction losses

■ Negligible switching losses

■ Avalanche rated

■ Extremely fast switching

■ Low thermal resistance

■ 1 mm package thickness

■ ECOPACK

®

2 compliant component

Description

Single Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in PowerFLAT™ 5x6, this device is intended for use in low voltage high frequency inverters.

A

K

A

PowerFLAT 5x6 STPS30L30DJF

Table 1. Device summary

K

A

Symbol Value

I

F(AV)

V

RRM

(max) 150 °C

T

j

V

(typ) 0.30 V

F

TM: PowerFLAT is a trademark of STMicroelectronics

March 2012 Doc ID 022946 Rev 1 1/7

This is information on a product in full production.

30 A

30 V

www.st.com

7

Characteristics STPS30L30DJF

1 Characteristics

Table 2. Absolute ratings (limiting values with anode terminals short-circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

V

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 30 V

RRM

Forward rms current 45 A Average forward current δ = 0.5 Tc = 110 °C 30 A

Surge non repetitive forward current tp = 10 ms sinusoidal 250 A

Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 1300 W

ARM

Maximum repetitive peak avalanche

ARM

voltage

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

tp <1 µs, Tj < 150 °C, IAR < 11 A

(1)

35 V

150 °C

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics (anode terminals short-circuited)

Junction to case 2 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

R

V

1. Pulse test: tp = 380 µs, δ < 2%

current

(1)

Forward voltage drop

F

Reverse leakage

(1)

I

= 25 °C

T

j

= 125 °C - 100 230 mA

T

j

= 25 °C IF = 15 A - - 0.44

T

j

T

= 125 °C IF = 15 A - 0.30 0.35

j

= 25 °C IF = 30 A - - 0.51

T

j

= 125 °C IF = 30 A - 0.38 0.45

T

j

VR = 30 V

- - 0.75 mA

V

To evaluate the conduction losses use the following equation: P = 0.27 x I

2/7 Doc ID 022946 Rev 1

+ 0.006 x I

F(AV)

F2(RMS)

STPS30L30DJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P

(W)

F(AV)

25

δ

=tp/T

δ=1

T

tp

20

15

10

5

0

0 5 10 15 20 25 30 35 40

δ=0.05

δ=0.1

δ=0.2

I

F(AV)

(A)

δ=0.5

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I

(A)

F(AV)

35

R

T

amb

th(j-a)=Rth(j-c)

(°C)

30

25

20

15

10

5

0

T

tp

=tp/T

δ

0 25 50 75 100 125 150

Figure 4. Normalized avalanche power

derating versus junction temperature

P

ARM (Tj)

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Single pulse

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

Doc ID 022946 Rev 1 3/7

Figure 6. Reverse leakage current versus

reverse voltage applied (typical values)

IR(mA)

1.E+03

Tj=150°C

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02 0 5 10 15 20 25 30

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

VR(V)