ST STPS30L120C User Manual

STPS30L120C

Power Schottky rectifier

Features

■ High junction temperature capability

■ Avalanche capability specified

■ Low forward voltage drop current

■ High frequency operation

■ Insulated package: TO-220FPAB

– Insulating voltage = 1500 V rms – Typical package capacitance 12 pF

Description

This dual center tap Schottky rectifier is suited for high frequency switch mode power supplies.

Packaged in TO-220AB, I this device provides adaptor designers with an optimized price-performance ratio.

Figure 1. Electrical characteristics

V

I

2

PAK and TO-220FPAB,

I

"Forward"

2 x I

O

(a)

X

A1

A2

K

A2

K

A1

TO-220AB

STPS30L120CT

A1

2

PAK

I

STPS30L120CR

Table 1. Device summary

Symbol Value

K

A1

TO-220FPAB

STPS30L120CFP

A2

K

A2

I

F

I

V

RRM

V

R

AR

"Reverse"

a. V

and I

ARM

operating area defined in Figure 13. V

must respect the reverse safe

ARM

pulse measurements (t are static characteristics.

O

< 1 µs). VR, IR, V

p

X

I

R

V

To

I

AR

F(Io)

V

AR

V

F(2xIo)

F

and IAR are

and VF,

RRM

2 x 15 A

F(AV)

120 V

V

RRM

T

j(max)

0.51 V

V

F(typ)

150 °C

May 2011 Doc ID 16313 Rev 3 1/10

www.st.com

10

Characteristics STPS30L120C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

V

ARM

V

ASM

T

1. Refer to Figure 13

2. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 30 A

Average forward current, δ = 0.5

Surge non repetitive forward current

Repetitive peak

ARM

avalanche power

Maximum repetitive

(1)

peak avalanche voltage

Maximum single pulse

(1)

peak avalanche voltage

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature

j

<

Rth(j-a)

1

dPtot

dTj

Total package 30 A

t

= 10 ms sinusoidal 220 A

p

= 1 µs, Tj = 25 °C 11500 W

t

p

= 1 µs, Tj < 150 °C, IAR < 23 A 150 V

t

p

t

= 1 µs, Tj < 150 °C, IAR < 23 A 150 V

p

(2)

150 °C

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB, I

TO-220FPAB

TO-220AB, I

2

PA K

Per diod e To ta l

To ta l

TO-220FPAB 3

1.3

0.7

4.5

3.8

0.1

°C/W

When the diodes 1 and 2 are used simultaneously : T

(diode 1) = P(diode 1) x R

j

(per diode) + P(diode 2) x R

th(j-c)

th(c)

2/10 Doc ID 16313 Rev 3

STPS30L120C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Test conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

j

T

= 125 °C - 12 35 mA

j

T

= 25 °C

j

= 125 °C - 0.51 0.57

T

j

T

= 25 °C

j

= 125 °C - 0.65 0.71

T

j

= 25 °C

T

j

T

= 125 °C - 0.755 0.84

j

= V

V

R

= 5 A

I

F

= 15 A

I

F

= 30 A

I

F

RRM

--200µA

- - 0.675

- - 0.88

- - 1.08

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : t

= 380 µs, δ < 2%

p

To evaluate the maximum conduction losses use the following equation : P = 0.58 x I

Figure 2. Average forward power dissipation

P (W)

F(AV)

14

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16 18

Figure 4. Normalized avalanche power

+ 0.0087 I

F(AV)

F2(RMS)

versus average forward current (per diode)

δ=0.1

δ=0.2

δ=0.05

I (A)

F(AV)

δ=0.5

δ

=tp/T

derating versus pulse duration

Figure 3. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

δ=1

T

tp

18

R

T

th(j-a)=Rth(j-c)

tp

R

=15°C/W

th(j-a)

T (°C)

amb

TO-220AB

TO-220FP

16

14

12

10

8

6

4

2

=tp/T

δ

0

0 25 50 75 100 125 150

Figure 5. Normalized avalanche power

derating versus junction temperature

P(tp)

1

0.1

0.01

0.001

ARM

P (1 µs)

ARM

0.10.01 1

t (µs)

p

10 100 1000

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

V

Doc ID 16313 Rev 3 3/10