ST STPS30H60-Y User Manual

Features

■ High junction temperature capability

■ Avalanche rated

■ Low leakage current

■ Good trade-off between leakage current and

forward voltage drop

■ High frequency operation

■ AEC-Q 101 qualified

STPS30H60-Y

Automotive power Schottky rectifier

Datasheet − production data

A1

K

A2

K

Description

Dual centre tab Schottky rectifier suited for high frequency switch mode power supply.

Packaged in D use in automotive applications. In these applications this device provides a good margin between the remaining voltage applied on the diode and the voltage capability of the diode.

2

PAK, this device is designed for

A2

A1

D2PAK

STPS30H60CGY-TR

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

V

F (typ)

2 X 15 A

60 V

175 °C

0.535 V

March 2012 Doc ID 022824 Rev 1 1/7

This is information on a product in full production.

www.st.com

7

Characteristics STPS30H60-Y

1 Characteristics

Table 2. Absolute ratings (limiting values per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 30 A

Average forward current, δ = 0.5 Tc = 155 °C

Surge non repetitive forward current tp = 10 ms sinusoidal 230 A

FSM

Relative peak avalanche power Tj = 125 °C tp = 10 µs 715 W

ARM

Operating junction temperature range

T

j

Storage temperature range -65 to + 175 °C

stg

dPtot

dTj

<

Rth(j-a)

1

(1)

Per diode 15 Total package 30

-40 to + 175 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case

th(j-c)

Coupling 0.1

th(c)

Per diode 1.5

°C/WTotal 0.8

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2%

p

= 25 °C

T

j

= 125 °C 8 25

T

j

T

= 25 °C

j

= 125 °C 435 470

T

j

= 25 °C

T

j

= 125 °C 535 570

T

j

= 25 °C

T

j

= 125 °C 635 690

T

j

V

= V

R

I

= 7.5 A

F

I

= 15 A

F

I

= 30 A

F

RRM

60 µA

550

660

820

A

mA

mV

To evaluate the conduction losses use the following equation: P = 0.45 x I

2/7 Doc ID 022824 Rev 1

+ 0.008 x I

F(AV)

F2(RMS)

STPS30H60-Y Characteristics

Figure 1. Conduction losses versus

average forward current

P (W)

F(AV)

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16 18

δ=0.05

δ=0.1 δ=0.2

I (A)

F(AV)

δ

δ=0.5

T

=tp/T

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

0.001

0.10.01 1

10 100 1000

t (µs)

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

δ=1

tp

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150 175

R

th(j-a)

=15 °C/W

T (°C)

amb

R

th(j-a)=Rth(j-c)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

p

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 5. Reverse leakage current versus

reverse voltage applied (typical values, per diode)

I (mA)

R

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03 0 5 10 15 20 25 30 35 40 45 50 55 60

Tj=150°C

Tj=125°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)

R

Doc ID 022824 Rev 1 3/7

Figure 6. Junction capacitance versus

reverse voltage applied (typical values, per diode)

C(nF)

10.0

1.0

V (V)

0.1 1 10 100

R

V

osc

F=1MHz

=30mV

Tj=25°C

RMS