ST STPS30H100DJF User Manual
STPS30H100DJF
Power Schottky rectifier
Datasheet − production data
Features
■ Very low conduction losses
■ Low forward voltage drop
■ Low thermal resistance
■ High specified avalanche capability
■ High integration
■ ECOPACK
®
2 compliant component
Description
The STPS30H100DJF is a power Schottky
rectifier suited for switch mode power supply and
high frequency DC to DC converters.
Housed in a PowerFLAT™ package, this device is
intended to be used in adaptors requiring good
efficiency at both low and high load. Its low profile
was especially designed to be used in
applications with space-saving constraints.
A
A
K
A
PowerFLAT 5x6
STPS30M100DJF
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
T
j
(typ) 0.56 V
V
F
K
K
A
30 A
100 V
150 °C
TM: PowerFLAT is a trademark of STMicroelectronics
March 2012 Doc ID 023024 Rev 1 1/8
This is information on a product in full production.
www.st.com
8
Characteristics STPS30H100DJF
1 Characteristics
Table 2. Absolute ratings (limiting values, anode terminals short circuited)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
V
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 45 A
Average forward current δ = 0.5 Tc = 100 °C 30 A
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
FSM
Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 3700 W
ARM
Maximum repetitive peak avalanche
ARM
voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
tp < 1 µs, Tj < 150 °C
IAR < 9.3A
(1)
120 V
150 °C
Symbol Parameter Value Unit
R
Table 4. Static electrical characteristics (anode terminals short circuited)
Junction to case 2 °C/W
th(j-c)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage
(1)
I
R
current
(1)
V
1. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
= 25 °C
T
j
T
= 125 °C - 2.5 6.5 mA
j
= 25 °C
T
j
T
= 125 °C - 0.56 0.62
j
T
= 25 °C
j
= 125 °C - 0.63 0.71
T
j
=V
V
R
= 15 A
I
F
I
= 30 A
F
RRM
--6µA
- - 0.76
- - 0.84
V
To evaluate the conduction losses use the following equation:
P = 0.60 x I
2/8 Doc ID 023024 Rev 1
+ 0.00367 x I
F(AV)
F2(RMS)
STPS30H100DJF Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P(W)
F(AV)
30
δ = 1
δ
δ = 0.5
=Tp/T
T
tp
25
20
15
10
5
0
0 5 10 15 20 25 30 35
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
t (s)
p
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
35
R
30
25
20
15
10
T
5
0
0 25 50 75 100 125 150
δ
=tp/T
tp
th(j-a)=Rth(j-c)
T (°C)
amb
Figure 4. Reverse leakage current versus
reverse voltage applied
(typical values)
I (mA)
R
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
0 102030405060708090100
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
V (V)
R
Figure 5. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
10000
1000
100
1 10 100
V
F=1MHz
osc
Tj=25°C
=30mV
Figure 6. Forward voltage drop versus
forward current
I (A)
FM
60
RMS
V (V)
R
Doc ID 023024 Rev 1 3/8
55
50
45
40
35
30
25
20
15
10
5
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=25°C
(Maximum values)
V (V)
FM
Loading...