ST STPS30H100C User Manual

STPS30H100C

High voltage power Schottky rectifier

Datasheet − production data

Features

■ Negligible switching losses

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ Avalanche capability specified

Description

Dual center tap Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.

Packaged in TO-200AB, TO-220AB narrow leads, TO-247,and I in high frequency inverters.

2

PAK this device is intended for use

A1

A2

K

A1

TO-220AB

STPS30H100CT

A2

K

A1

TO-220AB narrow leads

STPS30H100CTN

K

A1

TO-247

STPS30H100CW

I2PAK

STPS30H100CR

A2

K

A1

j

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

V

(max) 0.67 V

F

2 x 15 A

100 V

June 2012 Doc ID 6347 Rev 8 1/10

This is information on a product in full production.

www.st.com

10

Characteristics STPS30H100C

d

-

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

Repetitive peak reverse voltage 100 V

Forward rms current 30 A

Average forward current

Tc = 155 °C δ = 0.5

Per diode Per device

Surge non repetitive forward current tp = 10 ms sinusoidal 250 A

Repetitive peak reverse current tp = 2 µs square, F= 1 kHz 1 A

Non repetitive peak reverse current tp = 100 µs square 3 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 10800 W

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature range

j

(1)

-40 to +175 °C

15 30

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

Ptot

--------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance

1

------------------------- -

<

Rth j a–()

Symbol Parameter Value Unit

R

Junction to case

th(j-c)

Coupling 0.1

th(c)

Per diode To t al

1.6

0.9

°C/W

When the diodes 1 and 2 are used simultaneously:

A

ΔT

(diode 1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

V

Reverse leakage current

R

(2)

Forward voltage drop

F

j

T

= 125 °C 2 6 mA

j

= 25 °C

T

j

T

= 125 °C 0.64 0.67

j

= 25 °C

T

j

Tj = 125 °C 0.74 0.8

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.54 x I

2/10 Doc ID 6347 Rev 8

F(AV)

+ 0.0086 I

F2(RMS)

= V

V

R

= 15 A

I

F

= 30 A

I

F

th(c)

5µA

RRM

0.80

V

0.93

STPS30H100C Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

14

12

10

8

6

4

2

0

02468101214161820

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

δ = 1

=tp/T

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

18

16

14

12

10

8

6

4

2

0

R =15°C/W

th(j-a)

T

=tp/T

δ

0 25 50 75 100 125 150 175

tp

R=R

th(j-a) th(j-c)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

240 220 200 180 160 140 120 100

80 60

IM

40 20

0

1E-3 1E-2 1E-1 1E+0

δ=0.5

t

t(s)

T =25°C

a

T =75°C

a

T =150°C

a

Doc ID 6347 Rev 8 3/10

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ

T

=tp/T

δ = 0.1

0.2

Single pulse

0.0 1E-4 1E-3 1E-2 1E-1 1E+0

t (s)

p

tp