ST STPS3045DJF User Manual

Features

STPS3045DJF

Power Schottky rectifier

■ Low forward voltage drop

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche capability specified

■ Thin package: 1 mm

■ ECOPACK

®

2 compliant component

Description

Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.

Its low profile was especially designed to be used in applications with space-saving constraints.

A

K

A

PowerFLAT 5x6

STPS3045DJF

Table 1. Device summary

Symbol Value

K

A

TM: PowerFLAT is a trademark of STMicroelectronics

I

F(AV)

V

RRM

T

(max) 150 °C

j

(typ) 0.41 V

V

F

30 A

45 V

May 2011 Doc ID 16758 Rev 3 1/7

www.st.com

7

Characteristics STPS3045DJF

1 Characteristics

Table 2. Absolute ratings (limiting values, anode terminals short circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 45 V

RRM

Forward rms current 45 A

Average forward current Tc = 95 °C, δ = 0.5 30 A

= 10 ms sinusoidal

t

Surge non repetitive forward current

FSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 12500 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

p

= 25 °C

T

c

(1)

200 A

150 °C

R

Table 4. Static electrical characteristics (anode terminals short circuited)

Junction to case 2.5 °C/W

th(j-c)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

V

Reverse leakage current

R

(1)

Forward voltage drop

F

j

T

= 125 °C - 20 80 mA

j

= 25 °C

T

j

T

= 125 °C - 0.41 0.46

j

T

= 25 °C

j

= 125 °C - 0.50 0.56

T

j

= V

V

R

= 15 A

I

F

IF = 30 A

RRM

--300µA

--0.56

--0.64

1. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.43 x I

+ 0.00433 I

F(AV)

F2(RMS)

V

2/7 Doc ID 16758 Rev 3

STPS3045DJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P (W)

F(AV)

24

δ = 0.5

δ = 1

20

δ = 0.2

16

12

8

δ = 0.05

δ = 0.1

δ = t / T

p

T

t

p

4

I (A)

0

F(AV)

0 5 10 15 20 25 30 35 40

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)

F(AV)

35

30

25

20

15

10

5

0

T

δ = t / T

0 25 50 75 100 125 150

t

p

R= R

th(j-a) th(j-c)

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)

M

220

200

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

Figure 6. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Doc ID 16758 Rev 3 3/7

0.6

0.5

0.4

0.3

0.2 Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p