ST STPS3045C-Y User Manual

STPS3045C-Y

Automotive power Schottky rectifier

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche rated

■ AEC-Q101 qualified

Description

This device is a dual center tap Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in D intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

2

PAK, this device is especially

A1

A2

K

A2

A1

D2PAK

STPS3045CGY

Table 1. Device summary

I

2 x 15 A

F(AV)

V

RRM

175 °C

T

j (max)

V

F (max)

K

45 V

0.57 V

May 2011 Doc ID 17264 Rev 1 1/7

www.st.com

7

Characteristics STPS3045C-Y

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

T

Repetitive peak reverse voltage 45 V

Forward rms voltage 30 A

Average forward current δ = 0.5 T

Surge non repetitive forward current t

= 155 °C

C

= 10 ms sinusoidal 220 A

p

Per diod e Per device

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6000 W

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

j

(1)

-40 to +175 °C

10 30

A

dV/dt Critical rate of rise reverse voltage 10000 V/µs

dPtot

---------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 3. Thermal resistance parameters

1

------------------------- -

<

Rth j a–()

Symbol Parameter Value Unit

R

Junction to case

th (j-c)

R

th (c)

Coupling 0.10 ° C/W

Per diod e To t al

1.60

0.85

° C/W

When the diodes 1 and 2 are used simultaneously :

ΔT

(diode 1) = P(diode1) x R

j

Table 4. Static electrical characteristics (per diode)

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

R

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

(1)

Forward voltage drop

F

j

T

= 125 °C - 11 40 mA

j

T

= 125 °C IF = 15 A - 0.5 0.57

j

= 25 °C

j

T

= 125 °C - 0.65 0.72

j

To evaluate the conduction losses use the following equation:

P = 0.42 x I

2/7 Doc ID 17264 Rev 1

F(AV)

+ 0.01 I

F2(RMS)

= V

V

R

= 30 A

I

F

RRM

--200µA

- - 0.84

V T

STPS3045C-Y Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

12

11

10

9

8

7

6

5

4

3

2

1

0

02468101214161820

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

18

16

14

12

10

8

6

4

2

0

T

=tp/T

δ

0 25 50 75 100 125 150 175

R =15°C/W

th(j-a)

tp

T (°C)

amb

Figure 4. Normalized avalanche power

derating versus junction temperature

P(T)

ARM

j

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

200

180

160

140

120

100

80

60

I

M

40

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

T =75°C

C

T =100°C

C

T =125°C

C

Doc ID 17264 Rev 1 3/7

Figure 6. Relative variation of thermal

impedance junction to ambient versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

δ = 0.2

0.4

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

δ

T

=tp/T

tp