ST STPS3030, STPS3030CT, STPS3030CG, STPS3030CR User Manual

Main product characteristics

I

F(AV)

V

RRM

T

(max) 150° C

j

(max) 0.42 V

V

F

2 x 15 A

30 V

Features and benefits

STPS3030/CT/CG/CR

Low drop power Schottky rectifier

A1

K

A2

K

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop for higher efficiency

■ Low thermal resistance

■ Avalanche capability specified

Description

Dual Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in TO-220AB, D device is intended for use in low voltage high frequency inverters, free-wheeling and polarity protection applications.

2

PAK and I2PAK, this

j

A2

A1

2

PAK

D

STPS3030CG

STPS3030CR

I2PAK

TO-220AB

STPS3030CT

A2

K

A1

A2

K

October 2006 Rev 4 1/9

www.st.com

9

Characteristics STPS3030CT/CG/CR

d

-

1 Characteristics

Table 1. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

P

ARM

T

dV/dt Critical rate of rise of reverse voltage (rated V

Ptot

--------------

1. condition to avoid thermal runaway for a diode on its own heatsink

dTj

Table 2. Thermal resistance

Repetitive peak reverse voltage 30 V

RMS forward current 30 A

T

= 135° C Per diode 15

Average forward current

c

δ = 0.5 Per device 30

Surge non repetitive forward current tp = 10 ms sinusoidal 250 A

Peak repetitive reverse current tp = 2 µs square F= 1 kHz 1 A

Non repetitive peak reverse current tp = 100 µs square 3 A

Repetitive peak avalanche power tp = 1 µs Tj = 25° C 4100 W

Storage temperature range -65 to + 150 °C

stg

Maximum operating junction temperature

j

1

--------------------------

<

Rth j a–()

(1)

, Tj = 25° C) 10000 V/µs

R

150 °C

Symbol Parameter Value Unit

Per diode 1.2

R

Table 3. Static electrical characteristics (per diode)

Junction to case TO-220AB - D2PAK - I2PA K

th(j-c)

th(c)

°C/WTo t al 0 . 8

Coupling 0.4

A

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25° C

(1)

I

V

1. Pulse test: tp = 380 µs, δ < 2%

Reverse leakage current

R

(1)

Forward voltage drop

F

j

= 125° C 125 180

T

j

= 25° C IF = 15 A 0.44 0.49

T

j

T

= 125° C IF = 15 A 0.36 0.40

j

T

= 25° C IF = 30 A 0.53 0.58

j

= 125° C IF = 30 A 0.49 0.53

T

j

To evaluate the conduction losses use the following equation: P = 0.26 x I

2/9

F(AV)

+ 0.0107 I

F2(RMS)

= V

V

R

RRM

mA

V

0.23 1.0

STPS3030CT/CG/CR Characteristics

0

Figure 1. Conduction losses versus average

current

P(W)

10

9

8

7

6

5

4

3

2

1

0

0246810121416182

δ = 0.05

δ = 0.1

δ = 0.2

I (A)F(av)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

IM(A)

250

225

200

175

150

125

100

75

50

25

0

1.E-03 1.E-02 1.E-01 1.E+00

t(s)

TC=25°C

TC=75°C

TC=125°C

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

IF(av)(A)

18

16

14

12

10

8

6

4

2

0

0 25 50 75 100 125 150

Rth

(j-a)

=50°C/W

Rth

=Rth

(j-a)

Tamb(°C)

(j-c)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(t)

ARM p

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

T (°C)

0

j

0 25 50 75 100 125 150

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

δ

=tp/T

T

tp

3/9