ST STPS30170DJF User Manual

STPS30170DJF

Power Schottky rectifier

Features

Very small conduction losses

Negligible switching losses

Extremely fast switching

Low thermal resistance

Avalanche capability specified

ECOPACK®2 compliant component

Description

This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters.

Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.

Its low profile was especially designed to be used in applications with space-saving constraints.

A

 

 

K

A

 

K

K

A

A

PowerFLAT 5x6

STPS30170DJF

Table 1.

Device summary

 

 

Symbol

 

Value

 

 

 

 

 

IF(AV)

 

30 A

 

VRRM

 

170 V

 

Tj (max)

 

150 °C

 

VF(typ)

 

0.65 V

TM: PowerFLAT is a trademark of STMicroelectronics

May 2011

Doc ID 16749 Rev 3

1/7

www.st.com

Characteristics

STPS30170DJF

 

 

1 Characteristics

Table 2.

 

Absolute ratings (limiting values, anode terminals short circuited)

 

Symbol

 

 

 

 

Parameter

 

 

 

 

 

 

Value

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VRRM

Repetitive peak reverse voltage

 

 

 

 

 

 

170

 

V

IF(RMS)

Forward rms current

 

 

 

 

 

 

 

45

 

A

IF(AV)

Average forward current

 

Tc = 80 °C, δ = 0.5

 

 

30

 

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

 

 

200

 

A

Tc = 25 °C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARM

Repetitive peak avalanche power

tp = 1 µs, Tj = 25 °C

 

 

12500

 

W

Tstg

Storage temperature range

 

 

 

 

 

 

-65 to + 175

 

°C

 

Tj

Maximum operating junction temperature (1)

 

 

 

150

 

°C

1.

dPtot

<

1

 

condition to avoid thermal runaway for a diode on its own heatsink

 

 

 

 

dTj

Rth(j-a)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Table 3.

 

Thermal resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

 

 

 

Parameter

 

 

 

 

 

 

Value

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rth(j-c)

Junction to case

 

 

 

 

 

 

 

2.5

 

°C/W

Table 4.

 

Static electrical characteristics (anode terminals short circuited)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

 

 

Parameter

 

Test conditions

Min.

Typ.

 

Max.

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

(1)

Reverse leakage current

Tj = 25 °C

V

 

= V

-

-

 

15

 

µA

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

Tj = 125 °C

 

RRM

-

4

 

12

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tj

= 25 °C

IF = 15 A

-

-

 

0.88

 

 

 

 

 

 

 

 

T

= 125 °C

-

0.65

 

0.70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VF(2)

Forward voltage drop

j

 

 

 

 

 

 

 

 

 

 

V

Tj = 25 °C

IF = 30 A

-

-

 

0.95

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T = 125 °C

-

0.71

 

0.79

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

j

 

 

 

 

 

 

 

 

 

 

 

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.65 x IF(AV) + 0.0046 IF2(RMS)

2/7

Doc ID 16749 Rev 3

ST STPS30170DJF User Manual

STPS30170DJF

Characteristics

 

 

Figure 1. Average forward power dissipation Figure 2.

Average forward current versus

versus average forward current

ambient temperature (δ = 0.5)

32

PF(AV)(W)

 

 

 

28

δ = 0.5

δ = 1

 

 

24

δ = 0.2

 

 

 

20

δ = 0.1

 

 

 

16

δ = 0.05

T

 

12

δ = tp

/ T

tp

 

8

4

IF(AV)(A)

0

0

5

10

15

20

25

30

35

40

35 IF(AV)(A)

Rth(j-a) = Rth(j-c)

30

25

20

15

10

 

 

T

 

 

5

 

 

δ = tp / T

tp

Tamb(°C)

0

0

25

50

75

100

125

150

Figure 3. Normalized avalanche power

Figure 4. Normalized avalanche power

derating versus pulse duration

derating versus junction

 

temperature

PARM(tp)

 

 

 

 

 

 

PARM(Tj)

 

 

 

 

PARM(1 µs)

 

 

 

 

PARM(25 °C)

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

0.1

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

0.01

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

tp(µs)

 

 

 

 

 

Tj(°C)

 

 

0.001

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

0.1

1

10

100

1000

25

50

75

100

125

150

 

 

 

 

 

 

Figure 5. Non repetitive surge peak forward Figure 6.

Relative variation of thermal

current versus overload duration

impedance, junction to case,

(maximum values)

versus pulse duration

200

IM(A)

 

 

 

1.0

Zth(j-c)/Rth(j-c)

 

 

 

 

180

 

 

 

 

0.9

 

 

 

 

 

 

160

 

 

 

 

0.8

 

 

 

 

 

 

140

 

 

 

 

0.7

 

 

 

 

 

 

120

 

 

 

 

0.6

 

 

 

 

 

 

100

 

 

 

Tc = 25 °C

0.5

 

 

 

 

 

 

80

 

 

 

Tc = 75 °C

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

60

 

 

 

 

0.3

 

 

 

 

 

 

40

IM

 

 

Tc = 125 °C

0.2

Single pulse

 

 

 

 

20

 

t

 

 

0.1

 

 

 

 

 

 

t(s)

 

 

 

 

 

 

0

 

δ = 0.5

 

0.0

 

 

 

 

 

tp(s)

 

 

 

 

 

 

 

 

 

 

1.E-03

1.E-02

1.E-01

1.E+00

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Doc ID 16749 Rev 3

3/7

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