STPS30170DJF
Power Schottky rectifier
Features
■Very small conduction losses
■Negligible switching losses
■Extremely fast switching
■Low thermal resistance
■Avalanche capability specified
■ECOPACK®2 compliant component
Description
This Schottky rectifier is designed for switch mode power supply and high frequency DC to DC converters.
Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
Its low profile was especially designed to be used in applications with space-saving constraints.
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PowerFLAT 5x6 |
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STPS30170DJF |
Table 1. |
Device summary |
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Symbol |
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Value |
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IF(AV) |
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30 A |
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VRRM |
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170 V |
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Tj (max) |
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150 °C |
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VF(typ) |
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0.65 V |
TM: PowerFLAT is a trademark of STMicroelectronics
May 2011 |
Doc ID 16749 Rev 3 |
1/7 |
www.st.com
Characteristics |
STPS30170DJF |
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Table 2. |
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Absolute ratings (limiting values, anode terminals short circuited) |
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Parameter |
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Value |
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Unit |
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VRRM |
Repetitive peak reverse voltage |
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170 |
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V |
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IF(RMS) |
Forward rms current |
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45 |
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A |
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IF(AV) |
Average forward current |
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Tc = 80 °C, δ = 0.5 |
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30 |
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A |
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IFSM |
Surge non repetitive forward current |
tp = 10 ms sinusoidal |
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200 |
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Tc = 25 °C |
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PARM |
Repetitive peak avalanche power |
tp = 1 µs, Tj = 25 °C |
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12500 |
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W |
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Tstg |
Storage temperature range |
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-65 to + 175 |
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°C |
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Tj |
Maximum operating junction temperature (1) |
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150 |
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°C |
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1. |
dPtot |
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1 |
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condition to avoid thermal runaway for a diode on its own heatsink |
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dTj |
Rth(j-a) |
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Table 3. |
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Thermal resistance |
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Symbol |
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Parameter |
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Value |
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Rth(j-c) |
Junction to case |
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2.5 |
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°C/W |
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Table 4. |
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Static electrical characteristics (anode terminals short circuited) |
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Symbol |
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Parameter |
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Test conditions |
Min. |
Typ. |
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Max. |
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Unit |
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I |
(1) |
Reverse leakage current |
Tj = 25 °C |
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= V |
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15 |
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µA |
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R |
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R |
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Tj = 125 °C |
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RRM |
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4 |
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12 |
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mA |
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Tj |
= 25 °C |
IF = 15 A |
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0.88 |
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T |
= 125 °C |
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0.65 |
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0.70 |
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VF(2) |
Forward voltage drop |
j |
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V |
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Tj = 25 °C |
IF = 30 A |
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0.95 |
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T = 125 °C |
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0.71 |
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0.79 |
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j |
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1.Pulse test: tp = 5 ms, δ < 2%
2.Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.0046 IF2(RMS)
2/7 |
Doc ID 16749 Rev 3 |
STPS30170DJF |
Characteristics |
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Figure 1. Average forward power dissipation Figure 2. |
Average forward current versus |
versus average forward current |
ambient temperature (δ = 0.5) |
32 |
PF(AV)(W) |
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28 |
δ = 0.5 |
δ = 1 |
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24 |
δ = 0.2 |
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20 |
δ = 0.1 |
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16 |
δ = 0.05 |
T |
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12 |
δ = tp |
/ T |
tp |
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8
4
IF(AV)(A)
0
0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
35 IF(AV)(A)
Rth(j-a) = Rth(j-c)
30
25
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T |
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5 |
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δ = tp / T |
tp |
Tamb(°C) |
0
0 |
25 |
50 |
75 |
100 |
125 |
150 |
Figure 3. Normalized avalanche power |
Figure 4. Normalized avalanche power |
derating versus pulse duration |
derating versus junction |
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temperature |
PARM(tp) |
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PARM(Tj) |
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PARM(1 µs) |
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PARM(25 °C) |
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1 |
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1.2 |
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1 |
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0.1 |
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0.8 |
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0.6 |
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0.01 |
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0.4 |
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0.2 |
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tp(µs) |
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Tj(°C) |
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0.001 |
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0 |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
25 |
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75 |
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125 |
150 |
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Figure 5. Non repetitive surge peak forward Figure 6. |
Relative variation of thermal |
current versus overload duration |
impedance, junction to case, |
(maximum values) |
versus pulse duration |
200 |
IM(A) |
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1.0 |
Zth(j-c)/Rth(j-c) |
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180 |
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0.9 |
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160 |
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0.8 |
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140 |
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0.7 |
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120 |
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0.6 |
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100 |
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Tc = 25 °C |
0.5 |
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80 |
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Tc = 75 °C |
0.4 |
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60 |
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0.3 |
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40 |
IM |
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Tc = 125 °C |
0.2 |
Single pulse |
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20 |
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t |
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0.1 |
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t(s) |
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0 |
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δ = 0.5 |
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0.0 |
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tp(s) |
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1.E-03 |
1.E-02 |
1.E-01 |
1.E+00 |
1.E-05 |
1.E-04 |
1.E-03 |
1.E-02 |
1.E-01 |
1.E+00 |
Doc ID 16749 Rev 3 |
3/7 |