®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
V
V
F
I
F(AV)
RRM
T
j
(max)
2 x 15 A
170 V
175 °C
0.75 V
STPS30170C
A1
K
A2
FEATURES AND BENEFITS
■ High junction temperature capability
■ Low leakage current
■ Good trade off between leakage current and
forward voltage drop
■ Insulated package: TO-220FPAB
Insulating voltage: 2000 V DC
Capacitance: 45 pF
■ Avalanche specification
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency Switch Mode Power Supply.
A2
K
A1
TO-247
STPS30170CW
K
A1
TO-220FPAB
STPS30170CFP
A2
TO-220AB
STPS30170CT
K
D
STPS30170CG
Table 2: Order Codes
Part Numbers Marking
STPS30170CW STPS30170CW
STPS30170CT STPS30170CT
2
PAK
A2
K
A1
A2
A1
September 2005
STPS30170CFP STPS30170CFP
STPS30170CG STPS30170CG
STPS30170CG-TR STPS30170CG
REV. 1
1/9
STPS30170C
Table 3: Absolute Ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
T
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
------------- --
* : thermal runaway condition for a diode on its own heatsink
dTj
Table 4: Thermal Parameters
Repetitive peak reverse voltage 170 V
RMS forward current 30 A
Average forward current
δ = 0.5
TO-220FPAB Tc = 120 °C
TO-220AB /
D
2
PAK
Tc = 155 °C
TO-247 30
Per diode
Per device
Surge non repetitive forward current tp = 10ms sinusoidal 220 A
Repetitive peak avalanche power tp = 1µs Tj = 25 °C 10500 W
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature * 175 °C
j
1
--------------- ----------->
Rth j a–()
15
A
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220FPAB
TO-220AB / D
TO-247
2
PAK
Per diode
Total
Per diode
Total
Per diode
Total
4
3.3
1.6
0.85
1.5
0.8
°C/W
TO-220FPAB Coupling 2.6
R
th(c)
TO-220AB / D
2
PAK
Coupling 0.3
°C/W
TO-247 Coupling 0.3
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
= 25 °C
T
*
I
R
V
F
Reverse leakage current
**
Forward voltage drop
j
= 125 °C
T
j
T
= 25 °C
j
T
= 125 °C
j
= 25 °C
T
j
= 125 °C
T
j
V
= V
R
I
= 15 A
F
I
= 30 A
F
RRM
520 mA
0.69 0.75
0.80 0.86
20 µA
0.92
1
V
Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs,
To evaluate the conduction losses use the following equation: P = 0.64 x I
2/9
δ < 2%
F(AV)
+ 0.0073 I
F2(RMS)
STPS30170C
0
(A)
0
(A)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
P
(W)
F(AV)
14
12
10
8
6
4
2
0
0123456789101112131415161718
d=0.05
I
F(AV)
d=0.1
(A)
d=0.2 d=0.5
d
=t /T
d=1
T
t
p
p
Figure 3: Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
I
(A)
F(AV)
18
R
(TO-220AB, TO-247 & D²PAK)R
(TO-220AB, TO-247 & D²PAK)
th(j-a)=Rth(j-c)
16
th(j-a)=Rth(j-c)
14
12
10
R
=15 °C/W
8
th(j-A)
R
R
th(j-a)=Rth(j-c)
th(j-a)=Rth(j-c)
(TO-220FPAB)
(TO-220FPAB)
6
d
=t /T
T
t
p
p
T
(°C)
amb
4
2
0
0 25 50 75 100 125 150 175
Figure 4: Normalized avalanche power
derating versus junction temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25
50 75 100 125 150
T (°C)
j
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D
I
M
225
200
175
150
125
100
75
50
I
M
25
0
t
d
=0.5
1.E-03 1.E-02 1.E-01 1.E+0
TO-220AB, TO-247 & D²PAK
t(s)
2
TC=50°C
TC=75°C
TC=125°C
PAK)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
I
M
140
130
120
110
100
90
80
70
60
50
40
30
I
M
20
10
0
t
d
=0.5
t(s)
1.E-03 1.E-02 1.E-01 1.E+0
TO-220FPAB
TC=50°C
TC=75°C
TC=125°C
3/9
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