ST STPS30170C User Manual

®	STPS30170C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Table 1: Main Product Characteristics

IF(AV)	2 x 15 A
VRRM	170 V
Tj	175 °C
VF(max)	0.75 V

FEATURES AND BENEFITS

■High junction temperature capability

■Low leakage current

■Good trade off between leakage current and forward voltage drop

■Insulated package: TO-220FPAB Insulating voltage: 2000 V DC Capacitance: 45 pF

■Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High Frequency Switch Mode Power Supply.

A1

K

A2

	A2	A2
	K	K
		A1
	A1
	TO-247	TO-220AB

STPS30170CW STPS30170CT

	K
A2	A2

	K	A1
	A1

TO-220FPAB D2PAK

STPS30170CFP STPS30170CG

Table 2: Order Codes

Part Numbers	Marking
STPS30170CW	STPS30170CW
STPS30170CT	STPS30170CT
STPS30170CFP	STPS30170CFP
STPS30170CG	STPS30170CG
STPS30170CG-TR	STPS30170CG

September 2005

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Table 3: Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS)

RMS forward current

30

A

TO-220FPAB

Tc = 120 °C

Per diode

IF(AV)

Average forward current

TO-220AB /

15

A

δ = 0.5

D2PAK

Tc = 155 °C

Per device

TO-247

30

IFSM

Surge non repetitive forward current

tp = 10ms sinusoidal

220

A

PARM

Repetitive peak avalanche power

tp = 1µs Tj = 25 °C

10500

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

dPtot

1

* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink

dTj

Rth(j – a)

Table 4: Thermal Parameters

Symbol

Parameter

Value

Unit

TO-220FPAB

Per diode

4

Total

3.3

Rth(j-c)

Junction to case

TO-220AB / D2PAK

Per diode

1.6

°C/W

Total

0.85

TO-247

Per diode

1.5

Total

0.8

TO-220FPAB

Coupling

2.6

Rth(c)

TO-220AB / D2PAK

Coupling

0.3

°C/W

TO-247

Coupling

0.3

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 5: Static Electrical Characteristics (per diode)

Symbol	Parameter		Tests conditions			Min.		Typ	Max.	Unit
IR *	Reverse leakage current		Tj = 25 °C	VR = VRRM					20	µA
			Tj = 125 °C					5	20	mA
			Tj = 25 °C	IF = 15 A					0.92
VF **	Forward voltage drop		Tj = 125 °C					0.69	0.75	V
			Tj = 25 °C	IF = 30 A					1
			Tj = 125 °C					0.80	0.86
Pulse test:	* tp = 5 ms, δ < 2%
	** tp = 380 µs, δ < 2%						2
To evaluate the conduction losses use the following equation: P = 0.64 x I					+ 0.0073 I
				F(AV)			F (RMS)

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Figure 1: Average forward power dissipation versus average forward current (per diode)

P	(W)
F(AV)

14

=0.1	=0.2	=0.5	=1

12

=0.05

10

8
6
4																T
2
0								IF(AV)(A)						=tp/T			tp
0	1	2	3	4	5	6	7	8	9	10	11	12	13	14	15	16	17	18

Figure 3: Normalized avalanche power derating versus pulse duration

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000

Figure 2: Average forward current versus ambient temperature (δ = 0.5, per diode)

	I	(A)
	F(AV)
18
16			Rth(j-a)=Rth(j-c) (TO-220AB, TO-247 & D²PAK)

14

12		Rth(j-a)=Rth(j-c)
		(TO-220FPAB)
10
8	Rth(j-A)=15 °C/W
6
4	T
2	tp
=tp/T		Tamb(°C)

0

0	25	50	75	100	125	150	175
Figure	4:	Normalized		avalanche			power

derating versus junction temperature

PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2			Tj(°C)
0
25	50	75	100	125	150

Figure 5: Non repetitive surge peak forward	Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum	current versus overload duration (maximum
values, per diode) (TO-220AB, TO-247, D2PAK)	values, per diode) (TO-220FPAB)

I	(A)				I	(A)
M					M
225					140
			TO-220AB, TO-247 & D²PAK		130				TO-220FPAB
200
					120
175					110
150					100
					90
125				TC=50°C	80				TC=50°C
					70
100				TC=75°C	60
					50
75									TC=75°C
					40
50	IM			TC=125°C	30	IM
					20				TC=125°C
25								t(s)
		t	t(s)		10		t
		=0.5					=0.5
0					0
1.E-03		1.E-02	1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00

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