ST STPS30150C User Manual

STPS30150C

High voltage power Schottky rectifier

Features

■high junction temperature capability

■good trade-off between leakage

■current and forward voltage drop

■low leakage current

■insulated package: TO-220FPAB

–insulating voltage = 2000 V DC

–capacitance = 45 pF

■avalanche capability specified

Description

Dual center tap Schottky rectifier designed for high frequency switched mode power supplies.

A1

	K
A2
	K
A2	A2
K	A1
A1

TO-220FPAB D2PAK

STPS30150CFP STPS30150CG

A2	A2
A1K	A1K
TO-247	TO-220AB
STPS30150CW	STPS30150CT

Table 1.	Device summary
	IF(AV)		2 x 15 A
	VRRM		150 V
	Tj (max)		175 °C
	VF(max)		0.75 V

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Doc ID 7757 Rev 8

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Characteristics	STPS30150C

1 Characteristics

Table 2.			Absolute ratings (limiting values, per diode)
Symbol				Parameter			Value	Unit
	VRRM		Repetitive peak reverse voltage				150	V
IF(RMS)			Forward rms current				30	A
			Average forward current	TO-220FPAB	Tc =120 °C	Per diode	15
	IF(AV)			TO-220AB				A
			δ = 0.5		Tc = 155 °C	Per device	30
				2
				TO-247/D PAK
	IFSM		Surge non repetitive forward current		tp = 10 ms sinusoidal		220	A
	PARM		Repetitive peak avalanche power		tp = 1 µs Tj = 25 °C		10500	W
	Tstg		Storage temperature range				-65 to + 175	°C
	T		Maximum operating junction temperature (1)				175	°C
	j
	dV/dt		Critical rate of rise of reverse voltage				10000	V/µs
1.	dPtot		1
	dTj	< Rth(j – a)condition to avoid thermal runaway for a diode on its own heatsink
	---------------		-------------------------

Table 3.	Thermal resistances
Symbol		Parameter		Value	Unit
		TO-220FPAB	Per diode	4
			Total	3.3
Rth (j-c)	Junction to case	TO-220AB/D2PAK	Per diode	1.6
			Total	0.85
					°C/W
		TO-247	Per diode	1.5
			Total	0.8
Rth (c)	Coupling	TO-220FPAB		2.6
		TO-220AB/D2PAK/TO-247		0.1

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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STPS30150C									Characteristics
	Table 4.	Static electrical characteristics (per diode)
	Symbol	Parameter	Test conditions					Min.	Typ.	Max.	Unit
	I (1)	Reverse leakage current	Tj = 25 °C	V		= V				6.5	µA
					R		RRM
	R		Tj = 125 °C							8	mA
			Tj = 25 °C	IF = 15 A						0.92
	VF(2)	Forward voltage drop	Tj = 125 °C	IF = 15 A					0.69	0.75	V
			Tj = 25 °C	IF = 30 A						1
			Tj = 125 °C	IF = 30 A					0.8	0.86

1.Pulse test: tp = 5ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.64 x IF(AV) + 0.0073 IF2(RMS)

Figure 1. Average forward power dissipation Figure 2.	Average forward current versus
versus average forward current (per	ambient temperature (δ = 0.5, per
diode)	diode)

	PF(AV)(W)																			IF(AV)(A)
																				18
	14
									δ = 0.1		δ = 0.2			δ = 0.5										Rth(j-a)=Rth(j-c) TO-220AB / TO-247 / D2PAK
																				16
	12
						δ = 0.05
																				14
	10															δ = 1				12			Rth(j-a)=15°C/W		TO-220FP
	8																			10					Rth(j-a)=Rth(j-c)
	6																			8
	4																			6
																	T
																				4	T
	2								IF(AV)(A)											2
															δ=tp/T			tp					Tamb(°C)
																					=tp/T	tp
	0																			0	δ
	0	1	2	3	4	5	6	7	8	9	10	11	12	13	14	15	16	17	18
																				0	25	50	75	100	125	150	175

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)						PARM(Tj)
PARM(1 µs)
					PARM(25 °C)
1
					1.2
					1
0.1					0.8
					0.6
0.01					0.4
					0.2
			tp(µs)					Tj(°C)
0.001					0
0.01	0.1	1	10	100	25	50	75	100	125	150
					1000

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Characteristics	STPS30150C

Figure 5. Non repetitive surge peak forward Figure 6. current vs. overload duration (max.

values, per diode)

Non repetitive surge peak forward current vs. overload duration (max. values, per diode) (TO-220FPAB)

IM(A)						IM(A)
225					140
200			TO-220AB,TO-247, D2PAK		130					TO-220FPAB
					120
175					110
150					100
					90
125				Tc=50°C	80					Tc=50°C
					70
100				Tc=75°C	60
75					50					Tc=75°C
					40
50				Tc=125°C	30					Tc=125°C
IM					20	IM
25	t						t
			t(s)		10				t(s)
	δ=0.5						δ=0.5
0					0
1.E-03		1.E-02	1.E-01	1.E+00	1.E-03			1.E-02	1.E-01	1.E+00

Figure 7. Variation of thermal impedance	Figure 8. Variation of thermal impedance
junction to case versus pulse	junction to case versus pulse
duration (per diode)	duration (per diode) (TO-220FPAB)

	Zth(j-c)/Rth(j-c)						Zth(j-c)/Rth(j-c)
1.0	TO-220AB,TO-247, D2PAK					1.0
0.9						0.9	TO-220FPAB
0.8						0.8
0.7						0.7
0.6	δ = 0.5					0.6	δ = 0.5
0.5						0.5
0.4	δ = 0.2					0.4
0.3	δ = 0.1					0.3	δ = 0.2
0.2					T	0.2	δ = 0.1				T
	Single pulse
0.1			tp(s)	δ=tp/T	tp	0.1			tp(s)	δ=tp/T	tp
							Single pulse
0.0						0.0
1.E-03		1.E-02		1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00	1.E+01

Figure 9. Reverse leakage current versus																								Figure 10. Junction capacitance versus
				reverse voltage applied (typical																							reverse voltage applied (typical
				values, per diode)																							values, per diode)
	IR(µA)																							C(pF)
1E+5																								1000
							Tj=175°C																																					F=1MHz
1E+4																																										VOSC=30mVRMS
																																												Tj=25°C
1E+3							Tj=150°C
								Tj=125°C																100
1E+2
1E+1								Tj=100°C
1E+0
									Tj=25°C
																																			VR(V)
1E-1									VR(V)															10
																											5				10					20		50			100					200
0			25		50		75										100		125			150		1		2

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