STPS30150C
2
High voltage power Schottky rectifier
Features
■ high junction temperature capability
■ good trade-off between leakage
■ current and forward voltage drop
■ low leakage current
■ insulated package: TO-220FPAB
– insulating voltage = 2000 V DC
– capacitance = 45 pF
■ avalanche capability specified
Description
Dual center tap Schottky rectifier designed for
high frequency switched mode power supplies.
A1
A2
A2
K
A1
TO-220FPAB
STPS30150CFP
A
K
A1
TO-247
STPS30150CW
Table 1. Device summary
I
F(AV)
V
RRM
T
(max) 175 °C
j
(max) 0.75 V
V
F
K
K
A2
A1
D2PAK
STPS30150CG
A1
TO-220AB
STPS30150CT
2 x 15 A
150 V
A2
K
November 2010 Doc ID 7757 Rev 8 1/11
www.st.com
11
Characteristics STPS30150C
d
-
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
P
T
Repetitive peak reverse voltage 150 V
RRM
Forward rms current 30 A
TO-220FPAB Tc =120 °C
Average forward current
δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal 220 A
FSM
Repetitive peak avalanche power tp = 1 µs T
ARM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
TO-220AB
TO-247/D
Tc = 155 °C 30
2
PA K
(1)
Per diode
Per device
= 25 °C 10500 W
j
15
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Ptot
--------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
1
--------------------------
<
Rth j a–()
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
Junction to case
Coupling
TO-220FPAB
TO-220AB/D
TO-247
2
PA K
Per diode
To ta l
Per diode
To ta l
Per diode
To ta l
TO-220FPAB 2.6
TO-220AB/D
2
PA K/ TO - 2 47 0 .1
4
3.3
1.6
0.85
1.5
0.8
°C/W
A
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
2/11 Doc ID 7757 Rev 8
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS30150C Characteristics
0
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
Reverse leakage current
R
Tj = 25 °C
T
T
(2)
V
Forward voltage drop
F
T
T
T
1. Pulse test: tp = 5ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.0073 I
F2(RMS)
Figure 1. Average forward power dissipation
versus average forward current (per
diode)
P (W)
F(AV)
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 101112131415161718
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
.001
0.10.01 1
p
10 100 100
VR = V
= 125 °C 8 mA
j
= 25 °C IF = 15 A 0.92
j
= 125 °C IF = 15 A 0.69 0.75
j
= 25 °C IF = 30 A 1
j
= 125 °C IF = 30 A 0.8 0.86
j
RRM
Figure 2. Average forward current versus
6.5 µA
ambient temperature (
δ = 0.5, per
diode)
I (A)
F(AV)
18
16
14
12
10
8
6
4
2
0
T
tp
=tp/T
δ
0 25 50 75 100 125 150 175
Rth(j-a)=15°C/W
T (°C)
Rth(j-a)=Rth(j-c)
amb
TO-220AB / TO-247 / D PAK
TO-220FP
Rth(j-a)=Rth(j-c)
2
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
V
Doc ID 7757 Rev 8 3/11
Characteristics STPS30150C
0
55075
00
5
50
Figure 5. Non repetitive surge peak forward
current vs. overload duration (max.
values, per diode)
I (A)
M
225
200
175
150
125
100
75
50
IM
25
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
TO-220AB,TO-247, D PAK
t(s)
2
Tc=50°C
Tc=75°C
Tc=125°C
Figure 7. Variation of thermal impedance
junction to case versus pulse
duration (per diode)
Z/R
th(j-c) th(j-c)
1.0
TO-220AB,TO-247, D PAK
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
2
T
t (s)
p
δ
=tp/T
tp
Figure 9. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
I (µA)
R
1E+5
1E+4
1E+3
Tj=175°C
Tj=150°C
Tj=125°C
Figure 6. Non repetitive surge peak forward
current vs. overload duration (max.
values, per diode) (TO-220FPAB)
I (A)
M
140
130
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
TO-220FPAB
Tc=50°C
Tc=75°C
Tc=125°C
Figure 8. Variation of thermal impedance
junction to case versus pulse
duration (per diode) (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
TO-220FPAB
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
0.3
δ = 0.1
0.2
0.1
Single pulse
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t (s)
p
δ
=tp/T
T
tp
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1MHz
V =30mV
OSC RMS
T =25°C
j
1E+2
1E+1
1E+0
1E-1
Tj=100°C
Tj=25°C
V (V)
R
2
1
12
100
V (V)
10
1
12
5 10 20 50 100 200
R
4/11 Doc ID 7757 Rev 8
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