ST STPS30120DJF User Manual

Features

STPS30120DJF

Power Schottky rectifier

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low forward voltage drop

■ Low thermal resistance

■ High avalanche capability specified

■ ECOPACK

®

2 compliant component

Description

Schottky rectifier suited for switch mode power supply and high frequency DC to DC converters.

Packaged in PowerFLAT™, this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.

A

K

A

PowerFLAT 5x6 STPS30120DJF

Table 1. Device summary

Symbol Value

K

A

TM: PowerFLAT is a trademark of STMicroelectronics

I

F(AV)

V

RRM

(max) 150 °C

T

j

V

(typ) 0.61 V

F

30 A

120 V

May 2011 Doc ID 15671 Rev 5 1/7

www.st.com

7

Characteristics STPS30120DJF

1 Characteristics

Table 2. Absolute Ratings (limiting values, anode terminals short circuited)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 45 A

Average forward current Tc = 80 °C, δ = 0.5 30 A

Surge non repetitive forward current tp = 10 ms sinusoidal 200 A

FSM

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 12500 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

dTj

<

Rth(j-a)

1

(1)

150 °C

R

Table 4. Static electrical characteristics (anode terminals short circuited)

Junction to case 2.5 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(1)

V

Forward voltage drop

F

1. Pulse test: tp = 380 µs, δ < 2%

= 25 °C

T

j

= 125 °C 5.5 16 mA

T

j

= 25 °C

T

j

T

= 125 °C 0.61 0.67

j

= 25 °C

T

j

T

= 125 °C 0.68 0.75

j

= V

V

R

RRM

IF = 15 A

= 30 A

I

F

35 µA

0.84

0.92

To evaluate the conduction losses use the following equation: P = 0.61 x I

F(AV)

+ 0.005 I

F2(RMS)

V

2/7 Doc ID 15671 Rev 5

STPS30120DJF Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P

(W)

F(AV)

30.0

25.0

20.0

δ=0.05

15.0

10.0

5.0

0.0

0 5 10 15 20 25 30 35 40

δ=0.1

I

F(AV)

δ=0.2

(A)

δ=0.5 δ=1

=tp/T

δ

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I

(A)

F(AV)

35

R

30

25

20

15

10

5

0

T

tp

=tp/T

δ

0 25 50 75 100 125 150

th(j-a)=Rth(j-c)

T

amb

(°C)

Figure 4. Normalized avalanche power

derating versus junction temperature

P

ARM (Tj)

P (25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

IM(A)

200

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Figure 6. Relative variation of thermal

impedance, junction to case, versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

0.9

0.8

0.7

Tc=25°C

Tc=75°C

Tc=125°C

Doc ID 15671 Rev 5 3/7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

tp(s)