ST STPS30120C User Manual
STPS30120C
Power Schottky rectifier
Features
■ High junction temperature capability
■ Avalanche rated
■ Low leakage current
■ Good trade-off between leakage current and
forward voltage drop
Description
Dual center tap Schottky rectifier suited for high
frequency switch mode power supply.
Packaged in TO-220AB, TO-220AB narrow leads,
2
and I
PAK, this device is intended to be used in
notebook and LCD adaptors, desktop SMPS,
providing in these applications a margin between
the remaining voltages applied on the diode and
the voltage capability of the diode.
Figure 1. Electrical characteristics
2 x I
I
"Forward"
O
I
F
I
O
I
R
V
V
F(Io)
To
V
I
V
RRM
V
V
R
AR
"Reverse"
(a)
X
X
V
V
V
F(2xIo)
F
A1
A2
K
A2
K
A1
TO-220AB
STPS30120CT
K
A1
TO-220AB narrow leads
STPS30120CTN
Table 1. Device summary
Symbol Value
I
2 x 15 A
F(AV)
120 V
V
RRM
T
j(max)
0.57 V
V
F(typ)
K
K
A1
2
I
PA K
STPS30120CR
A2
K
175 °C
A2
K
I
AR
a. V
ARM
and I
must respect the reverse safe
ARM
operating area defined in Figure 10. V
pulse measurements (t
are static characteristics.
< 1 µs). VR, IR, V
p
and IAR are
AR
and VF,
RRM
January 2012 Doc ID 11213 Rev 4 1/9
www.st.com
9
Characteristics STPS30120C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
P
V
ARM
V
ASM
T
1. Refer to Figure 10
2. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Repetitive peak reverse voltage 120 V
RRM
Forward rms current 30 A
Average forward
current
δ = 0.5
= 145 °C
T
c
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 6700 W
ARM
Maximum repetitive
(1)
peak avalanche voltage
Maximum single pulse
(1)
peak avalanche voltage
Storage temperature range -65 to + 175 °C
stg
T
Maximum operating junction temperature
j
<
Rth(j-a)
1
dPtot
dTj
= 1 µs, Tj < 150 °C, IAR < 13.4 A 150 V
t
p
= 1 µs, Tj < 150 °C, IAR < 13.4 A 150 V
t
p
(2)
15
30
175 °C
Symbol Parameter Value Unit
R
R
th(j-c)
th(c)
Junction to case
Per diode
To ta l
Coupling Total 0.3 °C/W
2.2
1.3
°C/W
A
When the diodes 1 and 2 are used simultaneously :
T
(diode 1) = P(diode 1) x R
j
2/9 Doc ID 11213 Rev 4
(per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS30120C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Test conditions Min. Typ. Max. Unit
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
Tj = 25 °C
VR = V
= 125 °C 2.5 7.5 mA
T
j
T
= 25 °C
j
= 125 °C 0.57 0.61
T
j
= 25 °C
T
j
Tj = 125 °C 0.7 0.74
T
= 25 °C
j
= 125 °C 0.83 0.89
T
j
RRM
= 5 A
I
F
= 15 A
I
F
IF = 30 A
1. Pulse test : tp = 5 ms, δ < 2%
2. Pulse test : tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.59 x I
Figure 2. Average forward power
P (W)
F(AV)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18
Figure 4. Normalized avalanche power
+ 0.01 I
F(AV)
F2(RMS)
dissipation versus average forward
current (per diode)
δ = 0.2
δ = 0.1
δ = 0.05
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
derating versus pulse duration
Figure 3. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
I (A)
F(AV)
18
16
14
12
10
8
6
δ
=tp/T
T
tp
4
2
0
0 25 50 75 100 125 150 175
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(tp)
P (1µs)
ARM
1
ARM
P (25 °C)
1.2
1
P(T)
ARM j
ARM
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
T (°C)
amb
15 µA
0.74
0.92
V
1.02
0.1
0.01
0.001
0.10.01 1
10 100
0.8
0.6
0.4
0.2
T (°C)
t (µs)
p
1000
0
25 50 75 100 125
j
150
Doc ID 11213 Rev 4 3/9
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