ST STPS30120C User Manual

STPS30120C

Power Schottky rectifier

Features

■High junction temperature capability

■Avalanche rated

■Low leakage current

■Good trade-off between leakage current and forward voltage drop

Description

Dual center tap Schottky rectifier suited for high frequency switch mode power supply.

Packaged in TO-220AB, TO-220AB narrow leads, and I2PAK, this device is intended to be used in notebook and LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode.

Figure 1. Electrical characteristics (a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

A1

K

A2

K K

A2	A2
A1 K	A1 K
TO-220AB	I2PAK
STPS30120CT	STPS30120CR

K

A2

A1 K

TO-220AB narrow leads

STPS30120CTN

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 15 A
	VRRM		120 V
	Tj(max)		175 °C
	VF(typ)		0.57 V

a.VARM and IARM must respect the reverse safe operating area defined in Figure 10. VAR and IAR are pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics.

January 2012

Doc ID 11213 Rev 4

1/9

www.st.com

Characteristics

STPS30120C

1

Characteristics

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

V

IF(RMS)

Forward rms current

30

A

IF(AV)

Average forward

δ = 0.5

Per diode

15

A

current

Tc = 145 °C

Per device

30

IFSM

Surge non repetitive forward current

tp = 10 ms

sinusoidal

180

A

PARM

Repetitive peak avalanche power

tp = 1 µs

Tj = 25 °C

6700

W

(1)

Maximum repetitive

VARM

peak avalanche voltage

tp = 1 µs, Tj

< 150 °C, IAR < 13.4 A

150

V

(1)

Maximum single pulse

VASM

peak avalanche voltage

tp = 1 µs, Tj

< 150 °C, IAR < 13.4 A

150

V

Tstg

Storage temperature range

-65 to + 175

°C

T

Maximum operating junction temperature(2)

175

°C

j

1. Refer to Figure 10

2. dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

2.2

°C/W

Total

1.3

Rth(c)

Coupling

Total

0.3

°C/W

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)

2/9	Doc ID 11213 Rev 4

STPS30120C								Characteristics
Table 4.	Static electrical characteristics (per diode)
Symbol	Test conditions					Min.	Typ.	Max.	Unit
I (1)	Reverse leakage current	Tj = 25 °C	V		= V			15	µA
				R
R		Tj = 125 °C			RRM		2.5	7.5	mA
		Tj = 25 °C	IF = 5 A					0.74
		Tj = 125 °C					0.57	0.61
VF(2)	Forward voltage drop	Tj = 25 °C	IF = 15 A					0.92	V
		Tj = 125 °C					0.7	0.74
		Tj = 25 °C	IF = 30 A					1.02
		Tj = 125 °C					0.83	0.89

1.Pulse test : tp = 5 ms, δ < 2%

2.Pulse test : tp = 380 μs, δ < 2%

To evaluate the maximum conduction losses use the following equation :

P = 0.59 x IF(AV) + 0.01 IF2(RMS)

Figure 2. Average forward power dissipation versus average forward current (per diode)

Figure 3. Average forward current versus ambient temperature

(δ = 0.5, per diode)

PF(AV)(W)										IF(AV)(A)
15										18
14			δ = 0.05	δ = 0.1	δ = 0.2		δ = 0.5			16				Rth(j-a)=Rth(j-c)
13
12										14
11
								δ = 1
10										12
9										10
8														Rth(j-a)=15°C/W
7										8
6
5										6
4								T		4		T
3
2				IF(AV)(A)						2
1													Tamb(°C)
							=tp/T	tp			δ=tp/T	tp
0							δ			0
0	2	4	6	8	10	12	14	16	18	0	25	50	75	100	125	150	175

Figure 4. Normalized avalanche power	Figure 5. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)						PARM(Tj)
PARM(1µs)						PARM(25 °C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001					tp(µs)	0					T(°C)j
					1000						150
0.01	0.1	1	10	100		25	50	75	100	125

Doc ID 11213 Rev 4

3/9