ST STPS30100ST User Manual
STPS30100ST
Power Schottky rectifier
Main product characteristics
I
F(AV)
V
RRM
(max) 150° C
T
j
(typ) 0.385 V
V
F
30 A
100 V
A
K
A
K
Features and Benefits
■ Avalanche rated
■ Low V
■
F
Good trade off between leakage current and
forward voltage drop
■ High frequency operation
■ Avalanche capability specified
A
TO-220AB
STPS30100ST
A
K
Description
Single Schottky rectifier, suited for high frequency
switch mode power supply.
Packaged in TO-220AB, this device is intended to
be used in notebook and game station adaptors,
providing in these applications a good efficiency
at both low and high load.
Table 1. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
T
stg
T
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Repetitive peak reverse voltage 100 V
RMS forward current 60 A
Average forward current δ = 0.5 Tc = 125° C 30 A
Surge non repetitive forward current tp = 10 ms sinusoidal 300 A
Repetitive peak avalanche power tp = 1 µs Tj = 25° C 26400 W
Storage temperature range -65 to + 175 °C
Maximum operating junction temperature
j
1
------------------ --------
<
Rth j a–()
(1)
150 °C
October 2006 Rev 1 1/7
www.st.com
7
Characteristics STPS30100ST
1 Characteristics
Table 2. Thermal resistance
Symbol Parameter Value Unit
R
Table 3. Static electrical characteristics (per diode)
Junction to case 1 °C/W
th(j-c)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
T
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
= 25° C
j
Tj = 125° C 20 50 mA
T
= 25° C
j
T
= 125° C 10 20 mA
j
= 25° C
T
j
T
= 125° C 0.385
j
T
= 25° C
j
T
= 125° C 0.475
j
T
= 25° C
j
T
= 125° C 0.525 0.565
j
Tj = 25° C
T
= 125° C 0.605 0.655
j
V
= V
R
= 70 V
V
R
= 5 A
I
F
= 10 A
I
F
= 15 A
I
F
= 30 A
I
F
RRM
0.475
0.555
0.620 0.660
0.740 0.800
175 µA
60 µA
V
To evaluate the conduction losses use the following equation:
P = 0.475 x I
2/7
+ 0.006 x I
F(AV)
F2(RMS)
STPS30100ST Characteristics
(av)(W)
Figure 1. Conduction losses versus average
current
P
F
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 4 8 12162024283236
δ=0.05
δ=0.1 δ=0.2
I (av)(A)
F
δ=0.5 δ=1
=t /T
δ
p
T
t
p
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values)
I
(A)
M
350
300
250
200
150
100
IM
50
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
(av)(A)
I
F
35
R
30
25
20
15
10
5
0
T
t
=tp/T
δ
0 25 50 75 100 125 150
p
th(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
T (°C)
0
j
0 25 50 75 100 125 150
Figure 6. Relative variation of thermal
impedance junction to case versus
pulse duration
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
3/7
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