ST STPS2H100 User Manual

STPS2H100

Power Schottky rectifier

Features

■Negligible switching losses

■High junction temperature capability

■Low leakage current

■Good trade-off between leakage current and forward voltage drop

■Avalanche capability specified

Description

Schottky rectifiers designed for high frequency miniature switched mode power supplies such as adaptators and on board DC/DC converters. Available in SMA, SMB, low-profile SMB.

A	A
K	K
SMA	SMB
STPS2H100A	STPS2H100U
	A

K

SMB flat

STPS2H100UF

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 A
	VRRM		100 V
	Tj (max)		175 °C
	VF (max)		0.65 V

February 2010

Doc ID 6115 Rev 7

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Characteristics	STPS2H100

1 Characteristics

Table 2.

Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

V

IF(AV)

Average forward current

SMA / SMB

TL = 130 °C δ = 0.5

2

A

SMB flat

TL = 150 °C δ = 0.5

IFSM

Surge non repetitive forward current

tp =10 ms sinusoidal

75

A

PARM

Repetitive peak avalanche power

tp = 1 µs

Tj = 25 °C

2400

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Operating junction temperature (1)

175

°C

1. dPtot <

1

condition to avoid thermal runaway for a diode on its own heatsink

Rth(j-a)

dTj

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

SMA

30

°C/W

Rth(j-l)

Junction to lead

SMB

25

SMB flat

15

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

1

µA

Tj = 125 °C

0.4

1

mA

Tj = 25 °C

IF = 2 A

0.79

VF(2)

Forward voltage drop

Tj = 125 °C

0.6

0.65

V

Tj = 25 °C

IF = 4 A

0.88

Tj = 125 °C

0.69

0.74

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation: P = 0.56 x IF(AV) + 0.045 IF2(RMS)

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STPS2H100	Characteristics

Figure 1. Average forward power dissipation Figure 2. Average forward current versus versus average forward current ambient temperature (δ = 0.5)

(SMA / SMB)

PF(AV)(W)												IF(AV)(A)
1.7						δ = 0.1	δ = 0.2		δ = 0.5			2.2			Rth(j-a)=Rth(j-I)
1.6
				δ = 0.05								2.0
1.5																		SMB
1.4												1.8
1.3												1.6					SMA
1.2													SMA
										δ = 1
1.1												1.4	Rth(j-a)=100°C/W
1.0													S(CU)=1.5cm2
												1.2
0.9
0.8												1.0			SMB
0.7															Rth(j-a)=80°C/W
												0.8			S(CU)=1.5cm2
0.6
0.5												0.6
0.4										T			T
												0.4
0.3
0.2					IF(AV)(A)							0.2			Tamb(°C)
0.1									δ=tp/T		tp		δ=tp/T	tp
0.0												0.0
0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0	2.2	0	25	50	75	100	125	150	175

Figure 3. Average forward current versus ambient temperature (δ = 0.5)

(SMB flat)

Figure 4. Normalized avalanche power derating versus pulse duration

IF(AV)(A)								PARM(tp)
2.2				Rth(j-a)=Rth(j-l)				PARM(1 µs)
2.0								1
1.8
1.6
1.4								0.1
1.2					SMB flat
1.0
0.8					Rth(j-a)=40°C/W			0.01
0.6					. SCU=2.5 cm2
		T
0.4
0.2	δ=tp/T	tp	Tamb(°C)								tp(µs)
								0.001
0.0
0	25	50	75	100	125	150	175	0.01	0.1	1	10	100	1000

Figure 5. Normalized avalanche power	Figure 6. Non repetitive surge peak forward
derating versus junction	current versus overload duration
temperature	(maximum values) (SMA)

		PARM(Tj)					10	IM(A)
	PARM(25 °C)
											SMA
	1.2						9
	1						8
							7
	0.8						6				Ta=25°C
	0.6						5
											Ta=75°C
							4
	0.4						3
											Ta=125°C
	0.2						2	IM
				Tj(°C)			1	t		t(s)
								δ=0.5
	0
							0
	25	50	75	100	125	150
							1.E-03		1.E-02	1.E-01	1.E+00

Doc ID 6115 Rev 7

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