Features
STPS2H100
Power Schottky rectifier
■ Negligible switching losses
■ High junction temperature capability
■ Low leakage current
■ Good trade-off between leakage current and
forward voltage drop
■ Avalanche capability specified
Description
Schottky rectifiers designed for high frequency
miniature switched mode power supplies such as
adaptators and on board DC/DC converters.
Available in SMA, SMB, low-profile SMB.
A
K
SMA
STPS2H100A
A
K
SMB flat
STPS2H100UF
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
(max) 0.65 V
V
F
A
K
SMB
STPS2H100U
2 A
100 V
February 2010 Doc ID 6115 Rev 7 1/10
www.st.com
10
Characteristics STPS2H100
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(AV)
I
P
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Average forward current
Surge non repetitive forward current tp =10 ms sinusoidal 75 A
FSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400 W
ARM
Storage temperature range -65 to + 175 °C
stg
Operating junction temperature
T
j
dPtot
dTj
<
Rth(j-a)
1
SMA / SMB T
SMB flat T
(1)
= 130 °C δ = 0.5
L
= 150 °C δ = 0.5
L
2A
175 °C
Symbol Parameter Value Unit
SMA 30 °C/W
R
th(j-l)
Junction to lead
SMB 25
SMB flat 15
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Reverse leakage current
R
(2)
Forward voltage drop
F
j
T
= 125 °C 0.4 1 mA
j
= 25 °C
T
j
T
= 125 °C 0.6 0.65
j
T
= 25 °C
j
= 125 °C 0.69 0.74
T
j
V
R
= 2 A
I
F
I
= 4 A
F
= V
RRM
To evaluate the conduction losses use the following equation: P = 0.56 x I
F(AV)
+ 0.045 I
1µA
0.79
V
0.88
F2(RMS)
2/10 Doc ID 6115 Rev 7
STPS2H100 Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P (W)
F(AV)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
δ = 0.05
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
(SMB flat)
I (A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175
δ
=tp/T
T
tp
R=R
th(j-a) th(j-l)
T (°C)
amb
SMB flat
R =40°C/W
th(j-a)
. S =2.5 cm
CU
2
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
(SMA / SMB)
I (A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
SMA
R =100°C/W
th(j-a)
2
S =1.5cm
(CU)
T
tp
=tp/T
δ
0 25 50 75 100 125 150 175
R=R
th(j-a) th(j-I)
SMB
R =80°C/W
th(j-a)
S =1.5cm
(CU)
T (°C)
amb
SMB
SMA
2
Figure 4. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1 µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
I (A)
M
10
9
8
7
6
5
4
3
IM
2
1
0
1.E-03 1.E-02 1.E-01 1.E+00
δ=0.5
t
t(s)
SMA
T =25°C
a
T =75°C
a
T =125°C
a
Doc ID 6115 Rev 7 3/10
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