ST STPS2545CT-Y User Manual

Features

■ Very small conduction losses

■ Negligible switching losses

■ Extremely fast switching

■ Low thermal resistance

■ Avalanche capability specified

■ AEC-Q101 qualified

Description

Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.

This device is especially intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection in automotive applications.

STPS2545CT-Y

Automotive power Schottky rectifier

Datasheet − production data

A1

K

A2

K

A1

TO-220AB

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

V

F(max)

2 x 12.5 A

45 V

175 °C

0.57 V

June 2012 Doc ID 18183 Rev 2 1/7

This is information on a product in full production.

www.st.com

7

Characteristics STPS2545CT-Y

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

Repetitive peak reverse voltage 45 V

RRM

Forward rms current 30 A

= 160 °C

Average forward current δ = 0.5

Surge non repetitive forward current tp = 10 ms sinusoidal 200 A

FSM

Repetitive peak avalanche power

ARM

Storage temperature range -65 to + 175 °C

stg

Operating junction temperature range

T

j

T

c

= 1 µs, Tj = 25 °C

t

p

(1)

Per diode 12.5 A

-40 to + 175 °C

4800 W

dV/dt Critical rate of rise reverse voltage 10000 V/µs

<

Rth(j-a)

1

dPtot

1. condition to avoid thermal runaway for a diode on its own heatsink.

dTj

Table 3. Thermal resistances parameters

Symbol Parameter Value Unit

R

th (j-c)

Junction to case Per diode 1.6 °C/W Coupling 0.6 °C/W

th (c)

When the diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode 1) x R

j

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

(per diode) + P(diode 2) x R

th(j-c)

th(c)

= 25 °C

T

R

V

1. Pulse test: tp = 380 µs, δ < 2%

current

(1)

Forward voltage drop

F

Reverse leakage

(1)

I

j

T

= 125 °C 9 25 mA

j

T

= 125 °C IF = 12.5 A 0.50 0.57

j

= 25 °C IF = 25 A 0.84

j

T

= 125 °C IF = 25 A 0.65 0.72

j

V

R

To evaluate the conduction losses use the following equation: P = 0.42 x I

2/7 Doc ID 18183 Rev 2

+ 0.012 x I

F(AV)

F2(RMS)

= V

RRM

125 µA

V T

STPS2545CT-Y Characteristics

Figure 1. Conduction losses versus average

current

P (W)F(AV)

10

9

8

7

6

5

4

3

2

1

0

0.0 2.5 5.0 7.5 10.0 12.5 15.0

δ = 0.05

δ = 0.1

I (A)F(AV)

δ = 0.2

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (1 µs)

ARM

1

0.1

Figure 2. Average forward current versus

ambient temperature (δ = 0.5)

I (A)F(AV)

14

12

10

8

6

4

2

0

T

=tp/T

δ

0 25 50 75 100 125 150 175

Rth

=50°C/W

(j-a)

tp

T (°C)amb

Rth

=Rth

(j-a)

(j-c)

Figure 4. Normalized avalanche power

derating versus junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values)

I (A)M

200

180

160

140

120

100

80

60

40

IM

20

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

TC=25°C

TC=75°C

TC=125°C

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 6. Relative variation of thermal

impedance junction to case versus pulse duration

Zth(j-c) / Rth(j-c)

1.0

0.9

0.8

0.7

δ = 0.5

0.6

0.5

0.4

δ = 0.2

δ = 0.1

0.3

0.2

Single pulse

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

P

δ

T

=tp/T

tp

Doc ID 18183 Rev 2 3/7