STPS2545C
Power Schottky rectifier
Datasheet − production data
Features
■ Very small conduction losses
■ Negligible switching losses
■ Extremely fast switching
■ Low thermal resistance
■ Avalanche capability specified
■ ECOPACK
®
2 compliant component
(STPS2545CT)
Description
Dual center tab Schottky rectifier suited for switch
mode power supplies and high frequency DC to
DC converters.
This device is especially intended for use in low
volage, high frequency inverters, free-wheeling
and polarity protection applications.
A1
A2
TO-220AB
STPS2545CT
A2
K
A1
TO-220FPAB
STPS2545CFP
Table 1. Device summary
Symbol Value
I
2 x 12.5 A
F(AV)
45 V
V
RRM
T
j (max)
V
0.57 V
F(max)
K
A2
K
A1
K
A1
2
PAK
D
STPS2545CG
175 °C
A2
June 2012 Doc ID 8736 Rev 4 1/10
This is information on a product in full production.
www.st.com
10
Characteristics STPS2545C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 45 V
RRM
Forward rms current 30 A
2
Average forward current
δ = 0.5
Surge non repetitive forward current t
FSM
Repetitive peak reverse current
RRM
Non repetitive peak reverse current
RSM
Repetitive peak avalanche power
ARM
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
TO-220AB D
TO-220FPAB
PA K
(1)
=160 °C
T
c
T
=140 °C
c
= 10 ms sinusoidal 200 A
p
= 2 µs square F=1 kHz
t
p
= 100 µs square
t
p
= 1 µs Tj = 25 °C
t
p
Per diode 12.5
Per device 25
1 A
2A
4800 W
175 °C
A
dV/dt Critical rate of rise reverse voltage 10000 V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistances
Symbol Parameter Value Unit
2
TO-220AB / D
PAK Per diode 1.6
° C/W
TO-220FPAB 4
Junction to case
R
th (j-c)
TO-220AB / D2PAK Total 1.1
° C/W
TO-220FPAB 3.5
2
PA K 0 .6
° C/W
R
th (c)
Coupling
TO-220AB / D
TO-220FPAB 3
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R
2/10 Doc ID 8736 Rev 4
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS2545C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
(1)
I
Reverse leakage current
R
(1)
VF
Forward voltage drop
1. Pulse test : tp = 380 µs, δ < 2%
Tj = 25 °C
= 125 °C 9 25 mA
VR = V
T
j
= 125 °C IF = 12.5 A 0.50 0.57
T
j
= 25 °C IF = 25 A 0.84
j
= 125 °C IF = 25 A 0.65 0.72
T
j
RRM
125 µA
To evaluate the conduction losses use the following equation :
P = 0.42 x I
Figure 1. Conduction losses versus average
current)
P (W)F(AV)
10
9
8
7
6
5
4
3
2
1
0
0.0 2.5 5.0 7.5 10.0 12.5 15.0
δ = 0.05
δ = 0.1
Figure 3. Normalized avalanche power
derating versus pulse duration
+ 0.012 x I
F(AV)
δ = 0.2
I (A)F(AV)
δ = 0.5
F2(RMS)
T
=tp/T
δ
δ = 1
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)F(AV)
14
12
10
8
6
4
2
tp
δ
0
0 25 50 75 100 125 150 175
=tp/T
Rth
=Rth
(j-a)
(j-c)
Rth
=50°C/W
(j-a)
T
tp
T (°C)amb
Figure 4. Normalized avalanche power
derating versus junction
TO-220AB/D²PAK
temperature
P(t)
P(t)
ARM p
P (1µs)
ARM
1
P (25°C)
ARM
1.2
1
ARM p
V T
0.1
0.01
0.001
0.10.01 1
t (µs)
p
10 100 1000
0.8
0.6
0.4
0.2
T (°C)
0
j
0 25 50 75 100 125 150
Doc ID 8736 Rev 4 3/10