ST STPS2545C User Manual

STPS2545C

Power Schottky rectifier

Features

■Very small conduction losses

■Negligible switching losses

■Extremely fast switching

■Low thermal resistance

■Avalanche capability specified

■ECOPACK®2 compliant component (STPS2545CT)

Description

Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters.

This device is especially intended for use in low volage, high frequency inverters, free-wheeling and polarity protection applications.

Datasheet − production data

A1

K

A2

		A2
		A1K
	TO-220AB
	STPS2545CT
		K
	A2	A2
	K	A1
	A1
TO-220FPAB		D2PAK
STPS2545CFP		STPS2545CG
Table 1.	Device summary
	Symbol	Value
	IF(AV)	2 x 12.5 A
	VRRM	45 V
	Tj (max)	175 °C
	VF(max)	0.57 V

June 2012

Doc ID 8736 Rev 4

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This is information on a product in full production.

www.st.com

Characteristics	STPS2545C

1 Characteristics

Table 2.		Absolute ratings (limiting values, per diode)
Symbol					Parameter				Value	Unit
VRRM		Repetitive peak reverse voltage							45	V
IF(RMS)		Forward rms current							30	A
IF(AV)		Average forward current			TO-220AB D2PAK		Tc =160 °C	Per diode	12.5	A
		δ = 0.5			TO-220FPAB		Tc =140 °C	Per device	25
IFSM		Surge non repetitive forward current					tp = 10 ms sinusoidal		200	A
IRRM		Repetitive peak reverse current					tp = 2 µs square F=1 kHz		1	A
IRSM		Non repetitive peak reverse current					tp = 100 µs square		2	A
PARM		Repetitive peak avalanche power					tp = 1 µs Tj = 25 °C		4800	W
Tstg		Storage temperature range							-65 to + 175	°C
Tj		Maximum operating junction temperature(1)							175	°C
dV/dt		Critical rate of rise reverse voltage							10000	V/µs
1. dPtot <		1		condition to avoid thermal runaway for a diode on its own heatsink
		Rth(j-a)
dTj
Table 3.		Thermal resistances
Symbol					Parameter				Value	Unit
						TO-220AB / D2PAK		Per diode	1.6	° C/W
Rth (j-c)		Junction to case				TO-220FPAB			4
						TO-220AB / D2PAK		Total	1.1	° C/W
						TO-220FPAB			3.5
Rth (c)		Coupling				TO-220AB / D2PAK			0.6	° C/W
						TO-220FPAB			3

When the diodes 1 and 2 are used simultaneously :

Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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STPS2545C

Characteristics

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

125

µA

Tj = 125 °C

9

25

mA

Tj = 125 °C

IF = 12.5 A

0.50

0.57

V

(1)

Forward voltage drop

T = 25 °C

I

F

= 25 A

0.84

V

F

j

Tj = 125 °C

IF = 25 A

0.65

0.72

1. Pulse test : tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :

P = 0.42 x I

F(AV)

+ 0.012 x I

2

F (RMS)

Figure 1.

Conduction losses versus average Figure 2.

Average forward current versus

current)

ambient temperature (δ = 0.5)

PF(AV)(W)								IF(AV)(A)
10								14
9		δ = 0.05	δ = 0.1	δ = 0.2		δ = 0.5				Rth(j-a)=Rth(j-c)				TO-220AB/D²PAK
								12
8
7							δ = 1	10
6								8
5
4								6		Rth(j-a)=50°C/W
3								4
						T
2									T
1			IF(AV)(A)					2
						δ=tp/T		δ=tp/T			Tamb(°C)
							tp			tp
0
								0
0.0	2.5	5.0		7.5	10.0	12.5	15.0	0	25	50	75	100	125	150	175

Figure 3. Normalized avalanche power	Figure 4. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)							PARM(tp)
PARM(1µs)						PARM(25°C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001			tp(µs)			0			Tj(°C)
0.01	0.1	1	10	100	1000	0	25	50	75	100	125	150

Doc ID 8736 Rev 4

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