Features
■ Negligible switching losses
■ Low forward voltage drop for higher efficiency
and extented battery life
■ Low thermal resistance
■ Surface mount miniature package
■ Avalanche capability specified
Description
150 V power Schottky rectifiers are suited for
switch mode power supplies on up to 24 V rails
and high frequency converters.
Packaged in SMA, SMA low profile, and axial, this
device is intended for use in consumer and
computer applications like TV, STB, PC and DVD
where low drop forward voltage is required to
reduce power dissipation.
STPS2150
Power Schottky rectifier
A
K
SMA
(JEDEC DO-214AC)
STPS2150A
A
K
SMAflat
(JEDEC DO-221AC)
STPS2150AF
Table 1. Device summary
I
F(AV)
V
RRM
(max) 175 °C
T
j
(max) 0.67 V
V
F
A
K
DO-15
STPS2150
2 A
150 V
September 2008 Rev 6 1/9
www.st.com
9
Characteristics STPS2150
1 Characteristics
Table 2. Absolute Ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(AV)
I
FSM
P
ARM
T
dPtot
---------------
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Repetitive peak reverse voltage 150
Average forward current
Surge non repetitive forward
current
SMA, SMAflat T
DO-15 TL = 130 °C δ = 0.5
SMA, SMAflat
DO-15 150
= 145 °C δ = 0.5
L
tp = 10 ms sinusoidal
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 2400
Storage temperature range -65 to + 175 °C
stg
Maximum operating junction temperature
T
j
1
------------------ --------
<
Rth j a–()
(1)
2
75
175 °C
Symbol Parameter Value Unit
SMA, SMAflat 20
R
th(j-l)
Table 4. Static electrical characteristics
Junction to lead
Lead length = 10 mm DO-15 30
°C/W
Symbol Parameter Tests conditions Min. Typ Max. Unit
V
A
A
W
(1)
I
R
VF
1. tp = 5 ms, δ < 2%
2. t
p
Reverse leakage current
(2)
Forward voltage drop
= 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.59 x I
T
= 25 °C
j
T
= 125 °C 0.5 1.5 mA
j
= V
V
R
RRM
Tj = 25 °C
= 2 A
I
T
= 125 °C 0.62 0.67
j
T
= 25 °C
j
= 125 °C 0.70 0.75
T
j
F
I
= 4 A
F
0.5 1.5 µA
0.78 0.82
0.86 0.89
+ 0.04 I
F(AV)
V
F2(RMS)
2/9
STPS2150 Characteristics
Figure 1. Average forward power
dissipation versus average
forward current
P (W)
F(AV)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
δ = 0.05
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
=tp/T
δ
Figure 3. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
δ = 1
T
Figure 2. Average forward current versus
ambient temperature (δ = 0.5)
I (A)
F(AV)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
tp
0.2
0.0
R
=100°C/W
th(j-a)
T
tp
=tp/T
δ
0 25 50 75 100 125 150 175
R
=200°C/W
th(j-a)
T (°C)
amb
R
th(j-a)=Rth(j-l)
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
SMA / SMAflat
DO-15
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, DO-15)
I (A)
M
10
9
8
7
6
5
4
3
2
I
M
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
DO-15
Ta=25°C
Ta=75°C
Ta=125°C
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, SMA)
I (A)
M
10
9
8
7
6
5
4
3
2
I
M
1
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
3/9
SMA
Ta=25°C
Ta=75°C
Ta=125°C
Loading...