ST STPS20SM60C User Manual

STPS20SM60C

Power Schottky rectifier

Features

■High current capability

■Avalanche rated

■Low forward voltage drop

■High frequency operation

Description

The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode power supply.

Packaged in TO-220AB, TO-220FPAB, I2PAK and D2PAK, this device is intended to be used in notebook, game station and desktop adapters, providing in these aplications a good efficiency at both low and high load.

Table 1.	Device summary
	Symbol		Value
	IF(AV)		2 x 10 A
	VRRM		60 V
	VF (typ)		0.420 V
	Tj (max)		150 °C

A1
	K
A2
K	K
A2	A2
K	A1
A1
I2PAK	D2PAK
STPS20SM60CR	STPS20SM60CG-TR
K

	A2	A1
		K A2
K

A1

TO-220AB TO-220FPAB STPS20SM60CT STPS20SM60CFP

Figure 1. Electrical characteristics(a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

a. VARM and IARM must respect the reverse safe operating area defined in Figure 14. VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics

October 2011

Doc ID 022015 Rev 1

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Characteristics	STPS20SM60C

1 Characteristics

Table 2.		Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
		otherwise specified)
Symbol			Parameter						Value	Unit
VRRM		Repetitive peak reverse voltage							60	V
IF(RMS)		Forward rms current							30	A
			TO-220AB,		Tc = 135 °C			Per diode	10
IF(AV)		Average forward current,	I2PAK, D2PAK		Tc = 130 °C			Per device	20	A
		δ = 0.5	TO-220FPAB		Tc = 110 °C			Per diode	10
					Tc = 90 °C			Per device	20
	IFSM	Surge non repetitive	tp = 10 ms sine-wave						220	A
		forward current
P	(1)	Repetitive peak avalanche power			T	= 25 °C, t	p	= 1 µs	8700	W
ARM					j
	(2)	Maximum repetitive peak
VARM		avalanche voltage	tp < 1 µs, Tj < 150 °C, IAR < 32.6 A						80	V
	(2)	Maximum single pulse
VASM		peak avalanche voltage	tp < 1 µs, Tj < 150 °C, IAR < 32.6 A						80	V
	Tstg	Storage temperature range							-65 to +175	°C
	Tj	Maximum operating junction temperature(3)							150	°C

1.For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.See Figure 14

3. dPtot <		1		condition to avoid thermal runaway for a diode on its own heatsink
		Rth(j-a)
dTj
Table 3.		Thermal parameters
Symbol				Parameter			Value	Unit
					TO-220AB	per diode	2.00
					I2PAK, D2PAK
Rth(j-c)		Junction to case				total	1.13	°C/W
					TO-220FPAB	per diode	4.90
						total	4.05
Rth(c)		Coupling			TO-220AB, I2PAK,	D2PAK	0.25	°C/W
					TO-220FPAB		3.20

When the two diodes 1 and 2 are used simultaneously:

Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

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	STPS20SM60C						Characteristics
	Table 4.	Static electrical characteristics (per diode)
	Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
	IR(1)	Reverse leakage current	Tj = 25 °C	VR = VRRM	-	10	40	µA
			Tj = 125 °C		-	5	25	mA
			Tj = 25 °C	IF = 5 A	-	0.505	0.545
	VF(2)	Forward voltage drop	Tj = 125 °C		-	0.420	0.475	V
			Tj = 25 °C	IF = 10 A	-	0.580	0.645
			Tj = 125 °C		-	0.525	0.600

1.Pulse test: tp = 5 ms, δ < 2 %

2.Pulse test: tp = 380 µs, δ < 2 %

To evaluate the conduction losses use the following equation:

P = 0.455 x IF(AV) + 0.0145 x IF2(RMS)

Figure 2. Average forward power dissipation Figure 3.	Average forward current versus
versus average forward current	ambient temperature
(per diode)	(δ = 0.5, per diode)

PF(AV)(W)

9

8

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

7

6

5

4

3

	2	T
	1	δ = tp / T	tp	IF(AV)(A)
	0

0

1

2

3

4

5

6

7

8

9

10

11

12

13

12	IF(AV)(A)
10							R		th(j-a) = Rth(j-c)
8
									2			2
					TO-220AB/I PAK/D PAK
6										TO-220FPAB
4
2
0								Tamb(°C)

0

25

50

75

100

125

150

Figure 4. Normalized avalanche power	Figure 5. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(tp)						PARM(Tj)
PARM(1µs)						PARM(25 °C)
1						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001					tp(µs)	0					Tj(°C)
					1000						150
0.01	0.1	1	10	100		25	50	75	100	125

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Characteristics	STPS20SM60C
Figure 6. Non repetitive surge peak forward Figure 7.	Non repetitive surge peak forward
current versus overload duration	current versus overload duration
(maximum values, per diode)	(maximum values, per diode)

IM(A)					100	IM(A)
160										TO-220FPAB
140		TO-220AB/I2PAK/D2PAK			90
120					80
					70
100					60					Tc = 25 °C
		Tc = 25 °C
80					50
60		T	c	= 75 °C	40					Tc = 75 °C
40					30
		Tc	= 125 °C		20					Tc = 125 °C
IM						I	M
20
	t				10			t
				t(s)
0	δ = 0.5				0			δ = 0.5
1.E-03	1.E-02	1.E-01		1.E+00	1.E-03			1.E-02	1.E-01	1.E+00

Figure 8. Relative thermal impedance	Figure 9. Relative thermal impedance
junction to case versus pulse	junction to case versus pulse
duration	duration

1.0	Zth(j-c)/Rth(j-c)						1.0	Zth(j-c)/Rth(j-c)
			2	2						TO-220FPAB
		TO-220AB/I			PAK
0.9				PAK/D			0.9
0.8							0.8
0.7							0.7
0.6							0.6
0.5							0.5
0.4							0.4
0.3							0.3
0.2	Single pulse						0.2	Single pulse
0.1						tp(s)	0.1					tp(s)
0.0							0.0
1.E-04		1.E-03		1.E-02	1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00	1.E+01

Figure 10. Reverse leakage current versus reverse voltage applied (typical values, per diode)

Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)

IR(mA)							C(pF)
1.E+02							1000		F = 1 MHz
		Tj	= 150 °C						Vosc = 30 mVRMS
1.E+01									T = 25 °C
									j
		Tj = 125 °C
1.E+00		Tj	= 100 °C
1.E-01		Tj = 75 °C
		Tj = 50 °C
1.E-02		Tj = 25 °C
1.E-03						VR(V)	100		VR(V)
0	10	20	30	40	50	60	1	10	100

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