ST STPS20SM60C User Manual

STPS20SM60C

Power Schottky rectifier

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ High frequency operation

Description

The STPS20SM60C is a dual diode Schottky
rectifier, suited for high frequency switch mode
power supply.

2 x 10 A

60 V

2

PAK and

Packaged in TO-220AB, TO-220FPAB, I

2

D

PAK, this device is intended to be used in
notebook, game station and desktop adapters,
providing in these aplications a good efficiency at
both low and high load.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(typ) 0.420 V

V

F

(max) 150 °C

T

j

A1

K

A2

K

K

A2

K

A1

I2PAK

STPS20SM60CR

STPS20SM60CG-TR

A1

2

PAK

D

K

A1

K

A2

TO-220FPAB

STPS20SM60CFP

K

A1

TO-220AB

STPS20SM60CT

A2

Figure 1. Electrical characteristics

2 x I

O

I

"Forward"

X

V

I

A2

(a)

I

F

I

V

RRM

V

V

a. V

ARM

operating area defined in Figure 14. V
pulse measurements (t
are static characteristics

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 1 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

X

V

V

F(2xIo)

F

and IAR are

AR

and VF,

RRM

V

October 2011 Doc ID 022015 Rev 1 1/11

www.st.com

11

Characteristics STPS20SM60C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, at T

otherwise specified)

Symbol Parameter Value Unit

= 25 °C unless

amb

V

I

F(RMS)

I

F(AV)

I

FSM

P

ARM

V

ARM

V

ASM

T

1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.

2. See Figure 14

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 60 V

RRM

Forward rms current 30 A

(3)

T

= 135 °C

c

= 130 °C

T

c

= 110 °C

T

c

= 90 °C

T

c

TO-220AB,

2

PAK, D2PA K

Average forward current,

I

δ = 0.5

TO-220FPAB

Surge non repetitive
forward current

(1)

Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 8700 W

Maximum repetitive peak

(2)

avalanche voltage

Maximum single pulse

(2)

peak avalanche voltage

Storage temperature range -65 to +175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

t

= 10 ms sine-wave 220 A

p

< 1 µs, Tj < 150 °C, IAR < 32.6 A 80 V

t

p

t

< 1 µs, Tj < 150 °C, IAR < 32.6 A 80 V

p

Per diode
Per device

Per diode
Per device

10
20

10
20

150 °C

Symbol Parameter Value Unit

per diode 2.00

total 1.13

per diode 4.90

total 4.05

2

PAK , D2PA K 0 .2 5

°C/W

°C/W

R

R

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB
I2PA K , D2PA K

TO-220FPAB

TO-220AB, I

TO-220FPAB 3.20

A

When the two diodes 1 and 2 are used simultaneously:

ΔT

(diode 1) = P(diode 1) x R

j

2/11 Doc ID 022015 Rev 1

(Per diode) + P(diode 2) x R

th(j-c)

th(c)

STPS20SM60C Characteristics

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

= 25 °C

T

j

= 125 °C - 5 25 mA

T

j

Tj = 25 °C

= 125 °C - 0.420 0.475

T

j

= 25 °C

T

j

= 125 °C - 0.525 0.600

T

j

V

= V

R

I

= 5 A

F

I

= 10 A

F

RRM

-1040µA

- 0.505 0.545

- 0.580 0.645

To evaluate the conduction losses use the following equation:
P = 0.455 x I

Figure 2. Average forward power dissipation

versus average forward current
(per diode)

P (W)

F(AV)

9

8

7

6

5

4

3

2

1

0

0 1 2 3 4 5 6 7 8 9 10 11 12 13

δ = 0.05

δ = 0.1

Figure 4. Normalized avalanche power

derating versus pulse duration

+ 0.0145 x I

F(AV)

δ = 0.2

T

δ = t / T

p

F2(RMS)

Figure 3. Average forward current versus

ambient temperature
(δ = 0.5, per diode)

I (A)

F(AV)

12

R

δ = 0.5

t

p

δ = 1

I (A)

F(AV)

10

8

6

4

2

0

0 25 50 75 100 125 150

TO-220AB/I PAK/D PAK

= R

th(j-a)

22

TO-220FPAB

T (°C)

amb

th(j-c)

Figure 5. Normalized avalanche power

derating versus junction
temperature

P(tp)

P (1µs)

ARM

1

ARM

P (25 °C)

1.2

1

P(T)

ARM j

ARM

V

0.1

0.01

0.001

0.10.01 1

10 100

0.8

0.6

0.4

0.2

T (°C)

t (µs)

p

1000

0

25 50 75 100 125

j

150

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Characteristics STPS20SM60C

Figure 6. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

δ = 0.5

t

TO-220AB/I PAK/D PAK

22

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

t(s)

Figure 8. Relative thermal impedance

junction to case versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

TO-220AB/I PAK/D PAK

22

t (s)

p

Figure 10. Reverse leakage current versus

reverse voltage applied
(typical values, per diode)

I (mA)

R

1.E+02

T = 150 °C

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03
0 102030405060

j

T = 125 °C

j

T = 100 °C

j

T = 75 °C

j

T = 50 °C

j

T = 25 °C

j

V (V)

R

Figure 7. Non repetitive surge peak forward

current versus overload duration
(maximum values, per diode)

I (A)

M

100

90

80

70

60

50

40

30

20

I

M

10

0

1.E-03 1.E-02 1.E-01 1.E+00

δ

= 0.5

t

TO-220FPAB

T = 25 °C

c

T = 75 °C

c

T = 125 °C

c

Figure 9. Relative thermal impedance

junction to case versus pulse
duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

TO-220FPAB

t (s)

p

Figure 11. Junction capacitance versus

reverse voltage applied
(typical values, per diode)

C(pF)

1000

100

1 10 100

F = 1 MHz

V = 30 mV

osc RMS

T = 25 °C

j

V (V)

R

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