ST STPS20SM120S User Manual

STPS20SM120S

Power Schottky rectifier

Datasheet − production data

Features

■ High current capability

■ Avalanche rated

■ Low forward voltage drop

■ High frequency operation

Description

This Schottky diode is suited for high frequency switch mode power supply.

2

Packaged in TO-220AB narrow leads and I this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load.

Figure 1. Electrical characteristics

2 x I

I

"Forward"

O

V

I

PA K,

(a)

X

A

K

A

K

TO-220AB narrow leads

STPS20SM120STN

Table 1. Device summary

STPS20SM120SR

Symbol Value

I

F(AV)

V

RRM

(typ) 0.49 V

V

F

(max) 150 °C

T

j

K

I2PAK

20 A

120 V

A

K

A

I

F

I

V

RRM

V

a. V

ARM

operating area defined in Figure 9. V pulse measurements (t V

, are static characteristics

F

AR

and I

R

"Reverse"

must respect the reverse safe

ARM

O

< 10 µs). VR, IR, V

p

I

R

V

To

I

AR

V

F(Io)

AR

X

V

F(2xIo)

F

and IAR are

and

RRM

April 2012 Doc ID 022921 Rev 1 1/8

This is information on a product in full production.

www.st.com

8

Characteristics STPS20SM120S

1 Characteristics

Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at

T

= 25 °C, unless otherwise specified)

amb

Symbo

l

Parameter Value Unit

V

I

F(RMS)

I

P

ARM

V

ARM

V

ASM

1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

2. See Figure 9

3. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 50 A Average forward current, δ = 0.5 Tc = 120 °C 20 A

F(AV)

Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 220 A

FSM

(1)

Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 900 W

Maximum repetitive

(2)

peak avalanche voltage

Maximum single-pulse

(2)

peak avalanche voltage

T

Storage temperature range

stg

TjMaximum operating junction temperature

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”.

<

Rth(j-a)

1

dPtot

dTj

< 10 µs, Tj < 125 °C, IAR < 6A 150 V

t

p

< 10 µs, Tj < 125 °C, IAR < 6A 150 V

t

p

-65 to +175

(3)

150 °C

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)

Junction to case 1.55 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

F

= 25 °C

j

= 125 °C - 15 40 mA

T

j

= 125 °C IF = 5 A - 0.49 0.54

T

j

T

= 25 °C IF = 10 A - 0.75

j

= 125 °C - 0.57 0.62

T

j

= 25 °C

T

j

= 125 °C - 0.65 0.72

T

j

V

=V

R

I

= 20 A

F

RRM

- 40 210 µA

-0.89

°C

V

To evaluate the conduction losses use the following equation: P = 0.56 x I

+ 0.008 x I

F(AV)

F(RMS)

2

2/8 Doc ID 022921 Rev 1

STPS20SM120S Characteristics

Figure 2. Average forward power dissipation

versus average forward current

P (W)

F(AV)

24

20

δ = 0.05

δ = 0.2

δ = 0.1

δ = 0.5

δ = 1

16

12

8

δ = t /T

T

I (A)

t

p

F(AV)

4

0

0 4 8 1216202428

Figure 4. Normalized avalanche power

derating versus pulse duration

P(tp)

ARM

P (10 µs)

ARM

1

0.1

0.01

t (µs)

0.001

p

1 10 100 1000

Figure 6. Reverse leakage current versus

reverse voltage applied (typical values)

I(mA)

R

1.E+02

=150

Tj°C

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03 0 102030405060708090100110120

Tj=150°C

Tj=100°C

Tj=75°C

Tj=50°C

Tj=25°C

V (V)

R

Figure 3. Average forward current versus

ambient temperature (δ = 0.5)

I(A)

F(AV)

24

R

= R

th(j-a)

th(j-c)

20

16

12

8

4

T

δ = t /T

t

p

0

p

0 25 50 75 100 125 150

T (°C)

amb

Figure 5. Relative variation of thermal

impedance junction to case versus pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

Single pulse

0.3

0.2

0.1

0.0

t (s)

p

1.E-04 1.E-03 1.E-02 1.E-01 1.E+00

Figure 7. Junction capacitance versus

reverse voltage applied (typical values)

C(pF)

1000

100

1 10 100 1000

F=1MHz

=30mV

V

osc

RMS

Tj=25°C

V (V)

R

Doc ID 022921 Rev 1 3/8