STPS20SM100S
Power Schottky rectifier
Features
■ High current capability
■ Avalanche rated
■ Low forward voltage drop current
■ High frequency operation
■ Insulated package (TO-220FPAB):
– Insulation voltage 2000 V rms
– Package capacitance = 12 pF
Description
This single Schottky rectifier is suited for high
frequency switch mode power supply.
20 A
100 V
2
PA K
Packaged in TO-220AB, TO-220FPAB, D
2
and I
PAK, this device is intended to be used in
notebook, game station and desktop adaptors,
providing in these applications a good efficiency
at both low and high load.
Table 1. Device summary
I
F(AV)
V
RRM
(max) 150 °C
T
j
(typ) 0.480 V
V
F
A(1)
K(2)
A(3)
K
A
A
K
TO-220AB
STPS20SM100ST
A
2
PAK
I
STPS20SM100SR
K
A
K
A
TO-220FPAB
STPS20SM100SFP
STPS20SM100SG
A
2
PAK
D
Figure 1. Electrical characteristics
2 x I
I
"Forward"
F(Io)
X
X
V
F
O
I
F
I
O
I
R
V
V
To
V
I
V
RRM
V
V
AR
R
"Reverse"
A
K
(a)
V
F(2xIo)
A
V
I
AR
a. V
and I
ARM
operating area defined in Figure 14. V
pulse measurements (t
are static characteristics
must respect the reverse safe
ARM
< 1 µs). VR, IR, V
p
and IAR are
AR
and VF,
RRM
April 2010 Doc ID 15524 Rev 2 1/11
www.st.com
11
Characteristics STPS20SM100S
1 Characteristics
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 14.
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 30 A
2
Average forward current δ = 0.5
Surge non repetitive forward current
(1)
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 15000 W
Maximum repetitive peak avalanche
(2)
voltage
Maximum single pulse peak
(2)
avalanche voltage
Storage temperature range -65 to + 150 °C
stg
Maximum operating junction temperature
T
j
dPtot
--------------dTj
1
--------------------------
<
Rth j a–()
TO-220AB, D
TO-220FPAB T
= 10 ms sinusoidal,
t
p
terminals 1 and 3 short circuited
tp < 1 µs Tj < 150 °C
IAR < 37.5 A
tp < 1 µs Tj < 150 °C
< 37.5 A
I
AR
(3)
PAK, I2PAK Tc = 125 °C
= 85 °C
c
20 A
350 A
120 V
120 V
150 °C
Symbol Parameter Value Unit
2
R
th(j-c)
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Junction to case
TO-220AB, D
TO-220FPAB 4
PAK, I2PA K 1 .3
°C/W
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
F
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
= 380 µs, δ < 2%
p
Tj = 25 °C
= 125 °C 10 30 mA
T
j
= 25 °C
T
j
= 125 °C 5 mA
T
j
= 25 °C
T
j
T
= 125 °C 480
j
= 25 °C
T
j
T
= 125 °C 560 620
j
= 25 °C
T
j
= 125 °C 630 700
T
j
V
= V
R
V
= 70 V
R
I
= 5 A
F
= 10 A
I
F
I
= 20 A
F
RRM
10 30 µA
5µA
565
685
mV
800 900
To evaluate the conduction losses use the following equation:
P = 0.6 x I
2/11 Doc ID 15524 Rev 2
+ 0.005 x I
F(AV)
F2(RMS)
STPS20SM100S Characteristics
Figure 2. Average forward power dissipation
versus average forward current
PF(av)(W)
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
δ = 0.05
δ = 0.1
δ = 0.2
I (av)(A)
F
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 4. Normalized avalanche power
derating versus pulse duration
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Figure 3. Average forward current versus
ambient temperature (δ = 0.5)
(av)(A)
I
F
22
20
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
R
th(j-a)=Rth(j-c)
R
TO-220FPAB
=15°C/W
th(j-a)
T (°C)
amb
TO-220AB/I²PAK
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(Tj)
ARM
P (25 °C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
25 50 75 100 125 150
T (°C)
j
Figure 6. Non repetitive surge peak forward
current versus overload
duration, maximum values
I
(A)
M
320
280
240
200
160
120
80
I
M
40
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
TO-220AB/I²PAK
TC=25°C
TC=75°C
TC=125°C
Doc ID 15524 Rev 2 3/11
Figure 7. Non repetitive surge peak forward
current versus overload duration,
maximum values (TO-220FPAB)
I
(A)
M
180
160
140
120
100
80
60
40
I
M
20
0
1.E-03 1.E-02 1.E-01 1.E+00
t
=0.5
δ
t(s)
TO-220FPAB
TC=25°C
TC=75°C
TC=125°C
Characteristics STPS20SM100S
TO-220AB/I²PAK
impedance junction to case
versus pulse duration
tp(s)
δ
=tp/T
Figure 9. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Z
th(j-c)/Rth(j-c)
1.0
TO-220FPAB
0.9
0.8
0.7
0.6
0.5
0.4
T
tp
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tp(s)
Figure 8. Relative variation of thermal
Z
th(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Single pulse
0.3
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
Figure 10. Reverse leakage current versus reverse voltage applied (typical values)
I
(mA)
R
1.E+02
Tj=150°C
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0 102030405060708090100
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
δ
=tp/T
T
tp
4/11 Doc ID 15524 Rev 2
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