ST STPS20SM100S User Manual

STPS20SM100S

Power Schottky rectifier

Features

■High current capability

■Avalanche rated

■Low forward voltage drop current

■High frequency operation

■Insulated package (TO-220FPAB):

–Insulation voltage 2000 V rms

–Package capacitance = 12 pF

Description

This single Schottky rectifier is suited for high frequency switch mode power supply.

Packaged in TO-220AB, TO-220FPAB, D2PAK and I2PAK, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.

Table 1.	Device summary
	IF(AV)		20 A
	VRRM		100 V
	Tj (max)		150 °C
	VF(typ)		0.480 V

A(1)

K(2)

A(3)

K

			A
	A
A	K	A	K
TO-220AB		I2PAK
STPS20SM100ST		STPS20SM100SR
		K
	A		A
A	K	A

TO-220FPAB D2PAK STPS20SM100SFP STPS20SM100SG

Figure 1. Electrical characteristics (a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

a. VARM and IARM must respect the reverse safe operating area defined in Figure 14. VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics

April 2010

Doc ID 15524 Rev 2

1/11

www.st.com

Characteristics	STPS20SM100S

	1		Characteristics
	Table 2.		Absolute ratings (limiting values with terminals 1 and 3 short circuited)
	Symbol		Parameter			Value	Unit
	VRRM		Repetitive peak reverse voltage			100	V
	IF(RMS)		Forward rms current			30	A
	IF(AV)		Average forward current δ = 0.5	TO-220AB, D2PAK, I2PAK Tc = 125 °C		20	A
				TO-220FPAB Tc = 85 °C
		IFSM	Surge non repetitive forward current	tp = 10 ms sinusoidal,		350	A
				terminals 1 and 3 short circuited
	P	(1)	Repetitive peak avalanche power	t = 1 µs	T = 25 °C	15000	W
	ARM			p	j
		(2)	Maximum repetitive peak avalanche	tp < 1 µs	Tj < 150 °C	120	V
	VARM		voltage	IAR < 37.5 A
		(2)	Maximum single pulse peak	tp < 1 µs	Tj < 150 °C	120	V
	VASM		avalanche voltage	IAR < 37.5 A
		Tstg	Storage temperature range			-65 to + 150	°C
		T	Maximum operating junction temperature (3)			150	°C
		j

1.For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.Refer to Figure 14.

3.	dPtot	1	condition to avoid thermal runaway for a diode on its own heatsink
	dTj	< Rth(j – a)
	---------------	-------------------------

	Table 3.	Thermal resistance
	Symbol		Parameter	Value	Unit
	Rth(j-c)	Junction to case	TO-220AB, D2PAK, I2PAK	1.3	°C/W
			TO-220FPAB	4

Table 4.	Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol	Parameter	Test conditions		Min.	Typ.	Max.	Unit
		Tj = 25 °C	VR = VRRM		10	30	µA
I (1)	Reverse leakage current	Tj = 125 °C			10	30	mA
R		Tj = 25 °C			5		µA
			VR = 70 V
		Tj = 125 °C			5		mA
		Tj = 25 °C	IF = 5 A		565
		Tj = 125 °C			480
VF(2)	Forward voltage drop	Tj = 25 °C	IF = 10 A		685		mV
		Tj = 125 °C			560	620
		Tj = 25 °C	IF = 20 A		800	900
		Tj = 125 °C			630	700

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.6 x IF(AV) + 0.005 x IF2(RMS)

2/11	Doc ID 15524 Rev 2

STPS20SM100S	Characteristics
Figure 2. Average forward power dissipation Figure 3.	Average forward current versus
versus average forward current	ambient temperature (δ = 0.5)

PF(av)(W)

22
20			δ = 1
18		δ = 0.5
16
14	δ = 0.2
12	δ = 0.1
10
	δ = 0.05
8
6			T
4
2	IF(av)(A)	δ=tp/T	tp
0

I	(av)(A)
	F

22			Rth(j-a)=Rth(j-c)	TO-220AB/I²PAK
20
18
16			TO-220FPAB
14
12
10			Rth(j-a)=15°C/W
8
6		T
4
2	δ=tp/T	tp	Tamb(°C)
0

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

0

25

50

75

100

125

150

Figure 4. Normalized avalanche power	Figure 5. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(t p)							PARM(Tj)
PARM(1µs)
						PARM(25 °C)
1
						1.2
						1
0.1						0.8
						0.6
0.01						0.4
						0.2
0.001			tp(µs)						Tj(°C)
						0
0.01	0.1	1	10	100	1000	25	50	75	100	125	150

Figure 6. Non repetitive surge peak forward Figure 7.	Non repetitive surge peak forward
current versus overload	current versus overload duration,
duration, maximum values	maximum values (TO-220FPAB)

I	M	(A)				I	M	(A)
320						180
					TO-220AB/I²PAK	160					TO-220FPAB
280
240						140
200						120
						100
160					TC=25°C						TC=25°C
						80
120					TC=75°C	60					TC=75°C
80						40
					TC=125°C						TC=125°C
		IM						IM
40			t	t(s)		20			t	t(s)
			δ =0.5						δ =0.5
0						0
1.E-03			1.E-02	1.E-01	1.E+00	1.E-03			1.E-02	1.E-01	1.E+00

Doc ID 15524 Rev 2

3/11

Characteristics	STPS20SM100S
Figure 8. Relative variation of thermal	Figure 9. Relative variation of thermal
impedance junction to case	impedance junction to case versus
versus pulse duration	pulse duration (TO-220FPAB)

Zth(j-c)/Rth(j-c)

1.0

TO-220AB/I²PAK

0.9

0.8

0.7

0.6

0.5

0.4

0.3Single pulse

0.2				T
0.1		tp(s)	δ=tp/T	tp
0.0
1.E-03	1.E-02		1.E-01	1.E+00

1.0	Zth(j-c)/Rth(j-c)
0.9	TO-220FPAB
0.8
0.7
0.6
0.5
0.4
0.3					T
0.2
	Single pulse
0.1			tp(s)	δ=tp/T	tp
0.0
1.E-03		1.E-02	1.E-01	1.E+00	1.E+01

Figure 10. Reverse leakage current versus reverse voltage applied (typical values)

I	(mA)
1.E+02	R
					Tj=150°C
1.E+01					Tj=125°C
1.E+00					Tj=100°C
					Tj=75°C
1.E-01
					Tj=50°C
1.E-02					Tj=25°C
1.E-03								VR(V)
0	10	20	30	40	50	60	70	80	90	100

4/11	Doc ID 15524 Rev 2