ST STPS20S100C User Manual

STPS20S100C

100 V, 20 A power Schottky rectifier

Features

■ High junction temperature capability for

converters located in confined enrironment

■ Low leakage current at high temperature

■ Low static and dynamic losses as a result of the

Schottky barrier

■ Avalanche specification

Description

Schottky barrier rectifier designed for high frequency miniature switched mode power supplies such as adaptators and on board dc/dc converters. The device is packaged in TO-220AB,

2

I

PAK and TO-220FPAB.

A1

A2

K

A2

K

A1

TO-220AB

STPS20S100CT

K

TO-220FPAB

STPS20S100CFP

K

A1

I2PAK

STPS20S100CR

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j

(max) 0.71 V

V

F

K

A2

K

A1

2 x 10 A

100 V

175 °C

February 2010 Doc ID 11281 Rev 2 1/9

www.st.com

9

Characteristics STPS20S100C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

P

T

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal resistance

Symbol Parameter Value Unit

Repetitive peak reverse voltage 100 V

RRM

Forward rms current 30 A

2

Average forward current δ = 0.5

Surge non repetitive forward current tp = 10ms sinusoidal 180 A

FSM

Repetitive peak avalanche power tp = 1µs Tj = 25 °C 7200 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

<

Rth(j-a)

1

dPtot

dTj

TO-220AB / I

TO-220FPAB T

PA K Tc = 150 °C

= 140 °C

c

(1)

Per diode Per device

10 20

10

A

20

175 °C

R

th(j-c)

Junction to case TO-220AB / I2PA K

th(c)

th(j-c)

Junction to case TO-220FPAB

th(c)

Per diode 2.2

°C/WTo tal 1 .3

Coupling 0.3

Per diode 4.5

°C/WTo tal 3 .5

Coupling 2.5

When the diodes 1 and 2 are used simultaneously: Δ T

j(diode 1)

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

I

R

V

F

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

= P

(diode 1)

Reverse leakage

(1)

current

(2)

Forward voltage drop

x R

th(j-c)(Per diode)

+ P

(diode 2)

Tj = 25 °C

= 125 °C 1.3 4.5 mA

T

j

T

= 25 °C

j

= 125 °C 0.57 0.61

T

j

= 25 °C

T

j

= 125 °C 0.66 0.71

T

j

= 25 °C

T

j

= 125 °C 0.74 0.80

T

j

V

= V

R

I

= 5 A

F

I

= 10 A

F

I

= 20 A

F

x R

RRM

th(c)

3.5 µA

0.73

0.85

0.94

V

To evaluate the conduction losses use the following equation: P = 0.62 x I

2/9 Doc ID 11281 Rev 2

F(AV)

+ 0.009 I

F2(RMS)

STPS20S100C Characteristics

Figure 1. Average forward power dissipation

versus average forward current (per diode)

P (W)

F(AV)

10

9

8

7

6

5

4

3

2

1

0

012345678 910111213

δ = 0.05

δ = 0.1

I (A)

F(AV)

δ = 0.2

δ = 0.5

δ

δ = 1

=tp/T

T

tp

Figure 3. Normalized avalanche power

derating versus pulse duration

P(t)

ARM p

P(1µs)

ARM

1

0.1

0.01

t(µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current versus

ambient temperature (δ = 0.5, per diode)

I (A)

F(AV)

11

10

9

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125 150 175

δ

=tp/T

T

tp

R =15°C/W

th(j-a)

T (°C)

amb

R=R

th(j-a) th(j-c)

I²PAK/TO-220AB

TO-220FPAB

Figure 4. Normalized avalanche power

derating versus junction temperature

P

(Tj)

ARM

P

(25°C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T(°C)

j

Figure 5. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

180

160

140

120

100

80

60

40

IM

20

0

1.E-03 1.E-02 1.E-01 1.E+00

δ=0.5

t

t(s)

T =25°C

a

T =75°C

a

T =125°C

a

Doc ID 11281 Rev 2 3/9

Figure 6. Non repetitive surge peak forward

current versus overload duration (maximum values, per diode)

I (A)

M

120

110

100

90

80

70

60

50

40

30

I

M

20

10

0

1.E-03 1.E-02 1.E-01 1.E+00

t

δ

=0.5

t(s)

TO-220FPAB

T =25°C

a

T =75°C

a

T =125°C

a