ST STPS20M80C User Manual
STPS20M80C
Power Schottky rectifier
Features
■ High junction temperature capability
■ Optimized trade-off between leakage current
and forward voltage drop
■ Low leakage current
■ Avalanche capability specified
■ Insulated package TO-220FPAB
– insulated voltage: 2000 V
– package capacitance: 45 pF
Description
This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I
220FPAB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
(max) 175 °C
T
j
(typ) 490 mV
V
F
2
PAK, D2PAK and TO-
2 x 10 A
80 V
A1
K
A2
K
K
A2
K
A1
I2PAK
STPS20M80CR
A1
2
PAK
D
STPS20M80CG-TR
K
A1
K
A2
TO-220FPAB
STPS20M80CFP
K
A1
TO-220AB
STPS20M80CT
A2
Figure 1. Electrical characteristics
2 x I
I
"Forward"
F(Io)
X
X
V
F
O
I
F
I
O
I
R
V
V
To
V
I
V
RRM
V
V
AR
R
"Reverse"
(a)
V
F(2xIo)
A2
V
I
AR
a. V
and I
ARM
operating area defined in Figure 13. V
pulse measurements (t
are static characteristics
must respect the reverse safe
ARM
< 1 µs). VR, IR, V
p
and IAR are
AR
and VF,
RRM
April 2011 Doc ID 018724 Rev 1 1/11
www.st.com
11
Characteristics STPS20M80C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode, at T
otherwise specified)
Symbol Parameter Value Unit
= 25 °C unless
amb
V
I
F(RMS)
I
F(AV)
I
FSM
P
ARM
V
ARM
V
ASM
T
1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 13
3. condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
Repetitive peak reverse voltage 80 V
RRM
Forward rms current 30 A
T
(3)
= 160 °C
c
= 155 °C
T
c
= 135 °C
T
c
= 115 °C
T
c
TO-220AB,
2
PAK, D2PA K
Average forward current,
I
δ = 0.5
TO-220FPAB
Surge non repetitive
forward current
(1)
Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 6700 W
Maximum repetitive peak
(2)
avalanche voltage
Maximum single pulse
(2)
peak avalanche voltage
Storage temperature range -65 to +175 °C
stg
Maximum operating junction temperature
T
j
<
Rth(j-a)
1
dPtot
dTj
= 10 ms sinusoidal Tc = 25 °C 220 A
t
p
< 1 µs, Tj < 150 °C, IAR < 20.1 A 100 V
t
p
< 1 µs, Tj < 150 °C, IAR < 20.1 A 100 V
t
p
Per diode
Per device
Per diode
Per device
10
20
10
20
175 °C
Symbol Parameter Value Unit
per diode 2.0
total 1.10
per diode 4.90
total 4.05
0.20
°C/W
°C/W
R
R
th(j-c)
th(c)
Junction to case
Coupling
TO-220AB
2
I
PA K , D2PA K
TO-220FPAB
TO-220AB
2
PA K , D2PA K
I
TO-220FPAB 3.20
A
When the two diodes 1 and 2 are used simultaneously:
ΔT
(diode 1) = P(diode 1) x R
j
2/11 Doc ID 018724 Rev 1
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS20M80C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
(1)
I
R
V
Reverse leakage current
(2)
Forward voltage drop
F
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
= 380 µs, δ < 2 %
p
= 25 °C
T
j
= 125 °C - 6.2 20 mA
T
j
T
= 25 °C
j
= 125 °C - 0.490 0.530
T
j
= 25 °C
T
j
= 125 °C - 0.575 0.625
T
j
= 25 °C
T
j
= 125 °C - 0.670 0.740
T
j
V
= V
R
I
= 5 A
F
I
= 10 A
F
I
= 20 A
F
RRM
- 7 30 µA
- 0.555 0.610
- 0.670 0.740
- 0.810 0.905
To evaluate the conduction losses use the following equation:
P = 0.51 x I
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
9
8
7
6
5
4
3
2
1
0
0123456789101112
δ = 0.05
Figure 4. Normalized avalanche power
derating versus pulse duration
+ 0.0115 x I
F(AV)
δ = 0.1
δ = t / T
δ = 0.2
p
F2(RMS)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I (A)
F(AV)
12
δ = 0.5
δ = 1
T
t
I (A)
p
F(AV)
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125 150 175
TO-220AB / I PAK / D PAK
R
th(j-a)
22
TO-220FPAB
T (°C)
amb
= R
th(j-c)
Figure 5. Normalized avalanche power
derating versus junction
temperature
P(tp)
P (1µs)
ARM
1
ARM
P (25 °C)
1.2
1
P(T)
ARM j
ARM
V
0.1
0.01
0.001
0.10.01 1
10 100
0.8
0.6
0.4
0.2
T (°C)
t (µs)
p
1000
0
25 50 75 100 125
j
150
Doc ID 018724 Rev 1 3/11
Characteristics STPS20M80C
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
180
160
140
120
100
80
60
40
I
M
20
0
1.E-03 1.E-02 1.E-01 1.E+00
t
δ = 0.5
TO-220AB / I PAK / D PAK
22
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
Figure 8. Relative thermal impedance
junction to case versus pulse
duration
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
TO-220AB / I PAK / D PAK
22
t (s)
p
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
I (µA)
R
1.E+05
T = 150 °C
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
0 1020304050607080
j
T = 125 °C
j
T = 100 °C
j
T = 75 °C
j
T = 50 °C
j
T = 25 °C
j
V (V)
R
Figure 7. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
110
100
90
80
70
60
50
40
30
I
M
20
10
0
1.E-03 1.E-02 1.E-01 1.E+00
δ = 0.5
t
TO-220FPAB
T = 25 °C
c
T = 75 °C
c
T = 125 °C
c
t(s)
Figure 9. Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
Z/R
th(j-c) th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
Single pulse
0.2
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
TO-220FPAB
t (s)
p
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
1000
F = 1 MHz
V = 30 mV
osc RMS
T = 25 °C
j
100
V (V)
10
1 10 100
R
4/11 Doc ID 018724 Rev 1
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