ST STPS20M100S User Manual

STPS20M100S

Power Schottky rectifier

Features

■High current capability

■Avalanche rated

■Low forward voltage drop current

■High frequency operation

■Insulated package:

–Insulation voltage 2000 V rms

–Package capacitance = 12 pF

Description

This single Schottky rectifier is suited for high frequency switch mode power supply.

Packaged in TO-220AB, TO-220FPAB, D2PAK and I2PAK, this device is intended to be used in notebook, game station and desktop adaptors, providing in these applications a good efficiency at both low and high load.

Table 1.	Device summary
	IF(AV)		20 A
	VRRM		100 V
	Tj (max)		150 °C
	VF(typ)		0.455 V

A(1)

K(2)

A(3)

K

			A
	A
A	K	A	K
TO-220AB		I2PAK
STPS20M100ST		STPS20M100SR
		K
	A		A
A		K	A
TO-220FPAB			D2PAK

STPS20M100SFP STPS20M100SG-TR

Figure 1. Electrical characteristics (a)

	V	I
	I	"Forward"
	2 x IO		X
	IF
	IO		X
VRRM
VAR	VR			V
		IR
		VTo VF(Io)	VF	VF(2xIo)
	"Reverse"
		IAR

a. VARM and IARM must respect the reverse safe operating area defined in Figure 14 VAR and IAR are

pulse measurements (tp < 1 µs). VR, IR, VRRM and VF, are static characteristics

April 2010

Doc ID 15521 Rev 2

1/11

www.st.com

Characteristics	STPS20M100S

	1		Characteristics
	Table 2.		Absolute ratings (limiting values with terminals 1 and 3 short circuited)
	Symbol		Parameter			Value	Unit
	VRRM		Repetitive peak reverse voltage			100	V
	IF(RMS)		Forward current rms			30	A
	IF(AV)		Average forward current δ = 0.5	TO-220AB, D2PAK, I2PAK, Tc = 130 °C		20	A
				TO-220FPAB, Tc = 85 °C
		IFSM	Surge non repetitive forward current	tp = 10 ms sinusoidal,		530	A
				terminals 1 and 3 short circuited
	P	(1)	Repetitive peak avalanche power	t = 1 µs	T = 25 °C	16000	W
	ARM			p	j
		(2)	Maximum repetitive peak avalanche	tp < 1 µs	Tj < 150 °C	120	V
	VARM		voltage	IAR < 40 A
		(2)	Maximum single pulse peak	tp < 1 µs	Tj < 150 °C	120	V
	VASM		avalanche voltage	IAR < 40 A
		Tstg	Storage temperature range			-65 to + 175	°C
		T	Maximum operating junction temperature (3)			150	°C
		j

1.For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.Refer to Figure 14

3.	dPtot	1	condition to avoid thermal runaway for a diode on its own heatsink
	dTj	< Rth(j – a)
	---------------	-------------------------

	Table 3.	Thermal resistance
	Symbol		Parameter	Value	Unit
	Rth(j-c)	Junction to case	TO-220AB, D2PAK, I2PAK	1.2	°C/W
			TO-220FPAB	4

Table 4.	Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol	Parameter	Test conditions				Min.	Typ.	Max.	Unit
I (1)	Reverse leakage current	Tj = 25 °C	V	R	= 70 V		5		µA
R		Tj = 125 °C					5		mA
		Tj = 25 °C	VR = 100 V				10	40	µA
		Tj = 125 °C					10	40	mA
		Tj = 25 °C	IF = 5 A				550
		Tj = 125 °C					455
VF(2)	Forward voltage drop	Tj = 25 °C	IF = 10A				660	730	mV
		Tj = 125 °C					530	600
		Tj = 25 °C	IF = 20 A				775	850
		Tj = 125 °C					610	690

1.Pulse test: tp = 5 ms, δ < 2%

2.Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.425 x IF(AV) + 0.0088 x IF2(RMS)

2/11	Doc ID 15521 Rev 2

STPS20M100S	Characteristics
Figure 2. Average forward power dissipation Figure 3.	Average forward current versus
versus average forward current	ambient temperature (δ = 0.5)

P	F	(av)(W)
20
18		δ=0.5	δ=1
16
14		δ=0.2
12		δ=0.1
		δ=0.05

10

8

6
4		T
2	δ=tp/T	tp
IF(av)(A)

0

0

2

4

6

8

10

12

14

16

18

20

22

24

26

28

22

20

18

16

14

12

10

8

6

4

2

0

I	F(av)	(A)

Rth(j-a)=Rth(j-c) TO-220AB/I²PAK/D²PAK

		TO-220FPAB
		Rth(j-a)=15°C/W
	T
δ=tp/T	tp	Tamb(°C)

0

25

50

75

100

125

150

Figure 4. Normalized avalanche power	Figure 5. Normalized avalanche power
derating versus pulse duration	derating versus junction
	temperature

PARM(t p)						PARM(T j)
PARM(1µs)
					PARM(25°C)
1
					1.2
					1
0.1					0.8
					0.6
0.01					0.4
					0.2
			tp(µs)				Tj(°C)
0.001					0
0.01	0.1	1	10	100	25	50	75	100	125	150
					1000

Figure 6. Non repetitive surge peak forward Figure 7.	Non repetitive surge peak forward
current versus overload	current versus overload duration,
duration, maximum values	maximum values

I	M	(A)				I	M	(A)
280						140
		Terminals 1 and 3 short circuited							Terminals 1 and 3 short circuited
				TO-220AB/I²PAK/D²PAK							TO-220FPAB
240						120
200						100
160						80					TC=25°C
					TC=25°C
120					TC=75°C	60					TC=75°C
80						40
					TC=125°C						TC=125°C
40		IM				20		IM
										t(s)
			t	t(s)					t
			δ =0.5						δ =0.5
0						0
1.E-03			1.E-02	1.E-01	1.E+00	1.E-03			1.E-02	1.E-01	1.E+00

Doc ID 15521 Rev 2

3/11

Characteristics	STPS20M100S
Figure 8. Relative variation of thermal	Figure 9. Relative variation of thermal
impedance junction to case	impedance junction to case versus
versus pulse duration	pulse duration

1.0	Zth(j-c)/Rth(j-c)				1.0	Zth(j-c)/Rth(j-c)
0.9	TO-220AB/I²PAK/D²PAK				0.9	TO-220FPAB
0.8					0.8
0.7					0.7
0.6					0.6
0.5					0.5
0.4					0.4
0.3	Single pulse				0.3
0.2					0.2	Single pulse
0.1			tp(s)		0.1			tp(s)
0.0					0.0
1.E-03		1.E-02	1.E-01	1.E+00	1.E-03		1.E-02	1.E-01	1.E+00	1.E+01

Figure 10. Thermal resistance junction to	Figure 11. Reverse leakage current versus
ambient versus copper surface	reverse voltage applied (typical
under tab	values)

R	th(j-a)	(°C/W)
80
70	Epoxy printed board FR4, copper thickness = 35 µm)							D²PAK
60
50
40
30
20
10					SCu(cm²)
0
0		5	10	15	20	25	30	35	40

I	(mA)
1.E+02	R
					Tj=150°C
1.E+01					Tj=125°C
1.E+00					Tj=100°C
					Tj=75°C
1.E-01
					Tj=50°C
1.E-02					Tj=25°C
									VR(V)
1.E-03
0	10	20	30	40	50	60	70	80	90	100

Figure 12. Junction capacitance versus	Figure 13. Forward voltage drop versus
reverse voltage applied	forward current (terminals 1 and 3
(typical values)	short circuited)

C(pF)			I	FM	(A)
10000			40
		F=1MHz
		VOSC=30mVRMS	35
		Tj=25°C
			30					Tj=125°C
							(Maximum values)
			25
														Tj=25°C
1000			20					Tj=125°C						(Maximum values)
								(Typical values)
			15
			10
	VR(V)		5											VFM(V)
100			0
1	10	100	0.0		0.1	0.2	0.3	0.4	0.5	0.6	0.7	0.8	0.9	1.0	1.1	1.2

4/11	Doc ID 15521 Rev 2