ST STPS20L15D, STPS20L15G User Manual

®	STPS20L15D/G

LOW DROP OR-ing POWER SCHOTTKY DIODE

MAIN PRODUCT CHARACTERISTICS

IF(AV)	20 A
VRRM	15 V
Tj (max)	125°C
VF (max)	0.33 V

FEATURES AND BENEFITS

nVERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE

nREVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS

nAVALANCHE CAPABILITY SPECIFIED

DESCRIPTION

Packaged in TO-220AC or D2PAK, this device is especially intended for use as an OR-ing diode in fault tolerant power supply equipments.

ABSOLUTE RATINGS (limiting values)

K	K

A

A	NC
K

TO-220AC D2PAK

STPS20L15D STPS20L15G

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

15

V

IF(RMS)

RMS forward current

30

A

IF(AV)

Average forward current

Tc = 115°C

δ = 1

20

A

IFSM

Surge non repetitive forward current

tp = 10 ms

Sinusoidal

310

A

IRRM

Repetitive peak reverse current

tp = 2 µs

F = 1kHz

2

A

IRSM

Non repetitive peak reverse current

tp = 100 µs

3

A

PARM

Repetitive peak avalanche power

tp = 1µs

Tj = 25°C

13500

W

Tstg

Storage temperature range

- 65 to + 150

°C

Tj

Maximum operating junction temperature *

125

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

dPtot

<

1

thermal runaway condition for a diode on its own heatsink

dTj

Rth( j − a)

THERMAL RESISTANCES

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

1.6

°C/W

July 2003 - Ed: 3B	1/5

STPS20L15D/G

STATIC ELECTRICAL CHARACTERISTICS

Symbol	Tests Conditions	Tests Conditions			Min.	Typ.	Max.	Unit
IR *	Reverse leakage	Tj = 25°C	VR = 15V				6	mA
	current	Tj = 100°C	VR = 15V			200	500
VF *	Forward voltage drop	Tj = 25°C	IF = 19 A				0.41	V
		Tj = 25°C	IF = 40 A				0.52
		Tj = 125°C	IF = 19 A			0.28	0.33
		Tj = 125°C	IF = 40 A			0.42	0.50
Pulse test : * tp = 380 μs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.18 x IF(AV) + 8.10-3 x IF2(RMS)
Fig. 1: Average forward power dissipation versus			Fig. 2: Average forward current versus ambient
average forward current.			temperature ( δ = 1).

PF(av)(W)
8				δ = 0.1								22
7		δ = 0.05						δ = 0.5				20
						δ = 0.2						18
6										δ = 1
												16
5												14
4												12
												10
3
												8
2										T		6
												4
1
					IF(av) (A)				δ=tp/T		tp	2
0												0
	2	4	6	8	10	12	14	16	18	20
0												22

IF(av)(A)
			Rth(j-a)=Rth(j-c)
Rth(j-a)=35°C/W			Rth(j-a)=15°C/W
T
δ	tp		Tamb(°C)
=tp/T
0	25	50	75	100	125

Fig. 3: Normalized avalanche power derating versus pulse duration.

PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001			tp(µs)
0.01	0.1	1	10	100	1000

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).

Fig. 4: Normalized avalanche power derating versus junction temperature.

	PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0			Tj(°C)
0	25	50	75	100	125	150

Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.

IM(A)					Zth(j-c)/Rth(j-c)
250				1.0
200				0.8
150				0.6	δ = 0.5
100			Tc=50°C	0.4
					δ = 0.2
									T
			Tc=75°C
50	IM			0.2	δ = 0.1		tp (s)
	t	t(s)	Tc=110°C					δ=tp/T	tp
0	δ=0.5			0.0		Single pulse
	1E-2	1E-1	1E+0			1.0E-3	1.0E-2	1.0E-1	1.0E+0
1E-3				1.0E-4
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