ST STPS20L120C User Manual

Features

■ High junction temperature capability

■ Avalanche capability specified

■ Low forward voltage drop current

■ High frequency operation

■ Insulated package

– TO-220FPAB

Insulating voltage = 1500 V rms Typical package capacitance 12 pF

Description

Dual center tap Schottky rectifier suited for high frequency switch mode power supplies.

Packaged in TO-220AB and TO-220FPAB, this device provides the adaptor designers with an optimized price-performance ratio.

STPS20L120C

Power Schottky rectifier

A1

A2

K

A2

K

A1

TO-220AB

STPS20L120CT

Table 1. Device summary

I

2 x 10 A

F(AV)

120 V

V

RRM

T

j(max)

0.55 V

V

F(typ)

K

A2

K

A1

TO-220FPAB

STPS20L120CFP

150 °C

May 2009 Doc ID 15670 Rev 1 1/8

www.st.com

8

Characteristics STPS20L120C

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

FSM

P

T

1. condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Repetitive peak reverse voltage 120 V

RRM

Forward rms current 20 A

Average forward current, δ = 0.5 Total package 20 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 200 A

Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 8000 W

ARM

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature

T

j

dPtot

--------------dTj

1

--------------------------

<

Rth j a–()

(1)

150 °C

Symbol Parameter Value Unit

R

th(j-c)

th(c)

Junction to case

Coupling

TO-220AB

TO-220FPAB

Per diode To t al

TO-220AB

To t al

TO-220FPAB 3.2

2

1.1

4.9

4.1

0.2

When the diodes 1 and 2 are used simultaneously : T

(diode 1) = P(diode 1) x R

j

Table 4. Static electrical characteristics (per diode)

(per diode) + P(diode 2) x R

th(j-c)

th(c)

°C/W

Symbol Test conditions Min. Typ. Max. Unit

(1)

I

Reverse leakage current

R

T

(2)

V

Forward voltage drop

F

T

1. Pulse test : tp = 5 ms, δ < 2%

2. Pulse test : tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation : P = 0.595 x I

2/8 Doc ID 15670 Rev 1

F(AV)

+ 0.0095 I

F2(RMS)

= 25 °C

j

= 125 °C - 8 25 mA

j

= 25 °C

j

= 125 °C - 0.55 0.605

j

= 25 °C

j

= 125 °C - 0.63 0.69

j

= 25 °C

j

= 125 °C - 0.72 0.785

j

= V

V

R

RRM

I

= 5 A

F

IF = 10 A

= 20 A

I

F

- - 120 µA

- - 0.74

- - 0.86

--1

V

STPS20L120C Characteristics

Figure 1. Average forward power dissipation

vs. average forward current (per diode)

P (W)

F(AV)

9

8

7

6

5

4

3

2

1

0

0123456789101112

δ=0.05

I (A)

F(AV)

δ=0.1

δ=0.2

δ

δ=0.5

=tp/T

δ=1

T

tp

Figure 3. Normalized avalanche power

derating vs. pulse duration

P(t)

ARM p

P (1µs)

ARM

1

0.1

0.01

t (µs)

0.001

0.10.01 1

p

10 100 1000

Figure 2. Average forward current vs.

ambient temperature (

δ = 0.5, per diode)

I (A)

F(AV)

12

R

10

8

6

4

2

0

T

=tp/T

δ

0 25 50 75 100 125 150

th(j-a)=Rth(j-c)

TO-220AB

R

=15°C/W

th(j-a)

T (°C)

tp

amb

TO-220FP

Figure 4. Normalized avalanche power

derating vs. junction temperature

P(Tj)

ARM

P (25 °C)

ARM

1.2

1

0.8

0.6

0.4

0.2

0

25 50 75 100 125 150

T (°C)

j

Figure 5. Non repetitive surge peak forward

current vs. overload duration (max. values, per diode) (TO-220AB)

I (A)

M

180

160

140

120

100

80

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Figure 6. Non repetitive surge peak forward

current vs. overload duration (max. values, per diode) (TO-220FPAB)

I (A)

M

120

100

80

TC=25°C

TC=75°C

TC=125°C

60

40

I

M

20

0

1.E-03 1.E-02 1.E-01 1.E+00

t

=0.5

δ

t(s)

Doc ID 15670 Rev 1 3/8

TC=25°C

TC=75°C

TC=125°C