ST STPS20H100C User Manual
STPS20H100C
100 V power Schottky rectifier
Features
■ Negligible switching losses
■ High junction temperature capability
■ Good trade off between leakage current and
foward voltage drop
■ Low leakage current
■ Avalanche rated
■ Insulated package: TO-220FPAB
– Insulating voltage = 2000 V DC
– Capacitance = 45 pF
■ Avalanche capability specified
Description
Dual center tap Schottky rectifier designed for
high frequency miniature switched mode power
supplies such as adaptators and on board DC/DC
converters.
A1
A2
A2
K
A1
TO-220AB
STPS20H100CT
STPS20H100CFP
STPS20H100CT-H
A2
K
A1
2
PAK
I
STPS20H100CR
STPS20H100CR-H
j
Table 1. Device summary
K
A2
K
A1
TO-220FPAB
K
A2
A1
D2PAK
STPS20H100CG
Symbol Value
I
F(AV)
V
RRM
T
(max) 175 °C
j
(max) 0.64 V
V
F
2 x 10 A
100 V
September 2011 Doc ID 5386 Rev 7 1/11
www.st.com
11
Characteristics STPS20H100C
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
I
I
P
T
Repetitive peak reverse voltage 100 V
RRM
Forward rms current 30 A
TO-220AB
Average forward
current δ = 0.5
2
PAK / I2PA K
D
TO-220FPAB T
Surge non repetitive forward current tp = 10 ms sinusoidal 250 A
FSM
Repetitive peak reverse current tp = 2 µs square F= 1 kHz 1 A
RRM
Non repetitive peak reverse current tp = 100 µs square 3 A
RSM
Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 10800 W
ARM
Storage temperature range -65 to + 175 °C
stg
T
j
Maximum operating junction temperature
T
= 160 °C Per diode 10
c
= 145 °C Per device 20
c
(1)
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
<
Rth(j-a)
1
dPtot
1. condition to avoid thermal runaway for a diode on its own heatsink
dTj
Table 3. Thermal resistance
Symbol Parameter Value Unit
2
TO-220AB / D
PAK / I 2PAK Per diode 1.6
°C/W
TO-220FPAB Per diode 4
th(j-c)
Junction to case
TO-220AB / D2PA K / I2PAK Total 0.9
R
°C/W
TO-220FPAB Total 3.2
TO-220AB / D2PA K / I2PAK Coupling 0.15
R
th(c)
TO-220FPAB Coupling 2.5
°C/W
A
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R
2/11 Doc ID 5386 Rev 7
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STPS20H100C Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 25 °C
T
Reverse leakage
(1)
I
R
current
(2)
V
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
F
j
T
= 125 °C 2 6 mA
j
= 25 °C IF = 8 A 0.71
T
j
T
= 25 °C IF = 10 A 0.77
j
T
= 25 °C IF = 16 A 0.81
j
= 25 °C IF = 20 A 0.88
T
j
= 125 °C IF = 8 A 0.56 0.58
T
j
T
= 125 °C IF = 10 A 0.59 0.64
j
= 125 °C IF = 16 A 0.65 0.68
T
j
= 125 °C IF = 20 A 0.67 0.73
T
j
= V
V
R
RRM
To evaluate the conduction losses use the following equation:
P = 0.55 x I
F(AV)
+ 0.009 I
F2(RMS)
4.5 µA
V
Doc ID 5386 Rev 7 3/11
Characteristics STPS20H100C
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
P (W)
F(AV)
8
δ = 0.05
6
4
2
0
024681012
δ = 0.1
I (A)
F(AV)
δ = 0.2
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
P(tp)
ARM
P (1µs)
ARM
1
Figure 2. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
I (A)
F(AV)
12
R=R
10
R =15°C/W
th(j-a)
th(j-a) th(j-c)
8
R =40°C/W
th(j-a)
TO-220AB
TO-220FPAB
6
4
T
2
=tp/T
δ
0
0 25 50 75 100 125 150 175
tp
T (°C)
amb
Figure 4. Normalized avalanche power
derating versus junction
temperature
P(T)
ARM j
P (25 °C)
ARM
1.2
1
0.1
0.01
t (µs)
0.001
0.10.01 1
10 100
p
1000
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
200
180
160
140
120
100
80
60
I
M
40
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
TO-220AB, D PAK, I PAK
t(s)
22
T =50°C
C
T =75°C
C
T =125°C
C
0.8
0.6
0.4
0.2
T (°C)
0
25 50 75 100 125
j
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
140
120
100
80
60
40
I
M
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
TO-220FPAB
T =50°C
j
T =75°C
j
T =125°C
j
150
4/11 Doc ID 5386 Rev 7
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